Monolithic integration of InP-based transistors on Si substrates using MBE
Liu, W.K., Lubyshev, D., Fastenau, J.M., Wu, Y., Bulsara, M.T., Fitzgerald, E.A., Urteaga, M., Ha, W., Bergman, J., Brar, B., Hoke, W.E., LaRoche, J.R., Herrick, K.J., Kazior, T.E., Clark, D., Smith, D., Thompson, R.F., Drazek, C., Daval, N.
Published in Journal of crystal growth (15.03.2009)
Published in Journal of crystal growth (15.03.2009)
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Conference Proceeding
AlGaN/GaN HEMT With 300-GHz f
Chung, J.W., Hoke, W.E., Chumbes, E.M., Palacios, T.
Published in IEEE electron device letters (01.03.2010)
Published in IEEE electron device letters (01.03.2010)
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Journal Article
Metamorphic graded bandgap InGaAs-InGaAlAs-InAlAs double heterojunction p-i-I-n photodiodes
Jae-Hyung Jang, Cueva, G., Hoke, W.E., Lemonias, P.J., Fay, P., Adesida, I.
Published in Journal of lightwave technology (01.03.2002)
Published in Journal of lightwave technology (01.03.2002)
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Journal Article
40-Gbit/s OEIC on GaAs substrate through metamorphic buffer technology
Zhang, Y., Whelan, C.S., Leoni, R., Marsh, P.F., Hoke, W.E., Hunt, J.B., Laighton, C.M., Kazior, T.E.
Published in IEEE electron device letters (01.09.2003)
Published in IEEE electron device letters (01.09.2003)
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High performance 0.35 /spl mu/m gate-length monolithic enhancement/depletion-mode metamorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HEMTs on GaAs substrates
Dumka, D.C., Hoke, W.E., Lemonias, P.J., Cueva, G., Adesida, I.
Published in IEEE electron device letters (01.08.2001)
Published in IEEE electron device letters (01.08.2001)
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Journal Article
Wavelength dependent characteristics of high-speed metamorphic photodiodes
Jang, J.H., Cueva, G., Sankaralingam, R., Fay, P., Hoke, W.E., Adesida, I.
Published in IEEE photonics technology letters (01.02.2003)
Published in IEEE photonics technology letters (01.02.2003)
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Journal Article
Millimeter-wave low-noise and high-power metamorphic HEMT amplifiers and devices on GaAs substrates
Whelan, C.S., Kazior, T.E., Marsh, P.F., Hoke, W.E., McTaggart, R.A., Lyman, P.S., Lemonias, P.J., Lardizabal, S.M., Leoni, R.E., Lichwala, S.J.
Published in IEEE journal of solid-state circuits (01.09.2000)
Published in IEEE journal of solid-state circuits (01.09.2000)
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The impact of a large bandgap drift region in long-wavelength metamorphic photodiodes
Jang, J.H., Cueva, G., Dumka, D.C., Hoke, W.E., Lemonias, P.J., Fay, P., Adesida, I.
Published in IEEE photonics technology letters (01.10.2001)
Published in IEEE photonics technology letters (01.10.2001)
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Evaluation of a new plasma source for molecular beam epitaxial growth of InN and GaN films
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Conference Proceeding
Carbon doping of MBE GaAs and Ga0.7Al0.3As films using a graphite filament
Hoke, W.E., Lemonias, P.J., Lyman, P.S., Hendriks, H.T., Weir, D., Colombo, P.
Published in Journal of crystal growth (01.05.1991)
Published in Journal of crystal growth (01.05.1991)
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Journal Article
High indium metamorphic HEMT on a GaAs substrate
Hoke, W.E., Kennedy, T.D., Torabi, A., Whelan, C.S., Marsh, P.F., Leoni, R.E., Xu, C., Hsieh, K.C.
Published in Journal of crystal growth (01.04.2003)
Published in Journal of crystal growth (01.04.2003)
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Conference Proceeding
Long-wavelength In0.53Ga0.47As metamorphic p-i-n photodiodes on GaAs substrates
Jang, J.H, Cueva, G, Dumka, D.C, Hoke, W.E, Lemonias, P.J, Adesida, I
Published in IEEE photonics technology letters (01.02.2001)
Published in IEEE photonics technology letters (01.02.2001)
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Journal Article
High performance 0.35 μm gate-length monolithic enhancement/depletion-mode metamorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HEMTs on GaAs substrates
Dumka, D.C., Hoke, W.E., Lemonias, P.J., Cueva, G., Adesida, I.
Published in IEEE electron device letters (01.08.2001)
Published in IEEE electron device letters (01.08.2001)
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Journal Article
Properties of metamorphic materials and device structures on GaAs substrates
Hoke, W.E., Kennedy, T.D., Torabi, A., Whelan, C.S., Marsh, P.F., Leoni, R.E., Lardizabal, S.M., Zhang, Y., Jang, J.H., Adesida, I., Xu, C., Hsieh, K.C.
Published in Journal of crystal growth (01.04.2003)
Published in Journal of crystal growth (01.04.2003)
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Conference Proceeding
Thermal considerations for advanced SOI substrates designed for III-V/Si heterointegration
Yang, N., Bulsara, M.T., Fitzgerald, E.A., Liu, W.K., Lubyshev, D., Fastenau, J.M., Wu, Y., Urteaga, M., Ha, W., Bergman, J., Brar, B., Drazekd, C., Daval, N., Benaissa, L., Augendre, E., Hoke, W.E., LaRoche, J.R., Herrick, K.J., Kazior, T.E.
Published in 2009 IEEE International SOI Conference (01.10.2009)
Published in 2009 IEEE International SOI Conference (01.10.2009)
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Conference Proceeding
Reliability of metamorphic HEMTs on GaAs substrates
Marsh, P.F, Whelan, C.S, Hoke, W.E, Leoni III, R.E, Kazior, T.E
Published in Microelectronics and reliability (01.07.2002)
Published in Microelectronics and reliability (01.07.2002)
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Journal Article
MBE growth of InP-HBT structures on Ge-on-insulator/Si substrates by MBE
Lubyshev, D., Fastenau, J.M., Wu, Y., Liu, W.K., Urteaga, M., Ha, W., Bergman, J., Brar, B., Bulsara, M.T., Fitzgerald, E.A., Hoke, W.E., LaRoche, J.R., Herrick, K.J., Kazior, T.E.
Published in 2008 20th International Conference on Indium Phosphide and Related Materials (01.05.2008)
Published in 2008 20th International Conference on Indium Phosphide and Related Materials (01.05.2008)
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Conference Proceeding
Long wavelength metamorphic double heterojunction In0.53Ga0.47As/InAlGaAs/In0.52Al0.48As photodiodes on GaAs substrates
Jang, J.H., Cueva, G., Dumka, D.C., Hoke, W.E., Lemonias, P.J., Fay, P., Adesida, I.
Published in Electronics letters (24.05.2001)
Published in Electronics letters (24.05.2001)
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