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Comparison study of temperature dependent direct/indirect bandgap emissions of Ge1-x-ySixSny and Ge1-ySny grown on Ge buffered Si
by
Wang, Buguo
,
Harris, T.R.
,
Hogsed
,
M.R
.
,
Yeo, Y.K.
,
Ryu, Mee-Yi
,
Kouvetakis, J.
Published in
Thin solid films
(01.03.2019)
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Journal Article
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engineering
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physics
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direct/indirect bandgap emissions
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germanium silicon tin
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germanium tin
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materials science
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materials science, coatings & films
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materials science, multidisciplinary
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English
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ScienceDirect Freedom Collection 2013
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