Synchronized transform-limited operation of 10-GHz colliding pulse mode-locked laser
Ji, C., Chubun, N., Broeke, R.G., Cao, J., Du, Y., Yoo, S.J.B., Liou, K.Y., Lothian, J.R., Vatanapradit, S., Chu, S.N.G., Patel, B., Hobson, W.S., Tsang, W.T.
Published in IEEE photonics technology letters (15.02.2006)
Published in IEEE photonics technology letters (15.02.2006)
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Fabrication and characteristics of high-speed implant-confined index-guided lateral-current 850-nm vertical cavity surface-emitting lasers
Dang, G.T., Mehandru, R., Luo, B., Ren, F., Hobson, W.S., Lopata, J., Tayahi, M., Chu, S.N.G., Pearton, S.J., Chang, W., Shen, H.
Published in Journal of lightwave technology (01.04.2003)
Published in Journal of lightwave technology (01.04.2003)
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Inductively coupled plasma etching of III-V semiconductors in BCl3-based chemistries I. GaAs, GaN, GaP, GaSb and AlGaAs
MAEDA, T, LEE, J. W, SHUL, R. J, HAN, J, HONG, J, LAMBERS, E. S, PEARTON, S. J, ABERNATHY, C. R, HOBSON, W. S
Published in Applied surface science (01.04.1999)
Published in Applied surface science (01.04.1999)
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Small-signal characteristics of bottom-emitting intracavity contacted VCSEL's
Krishnamoorthy, A.V., Chirovsky, L.M.F., Hobson, W.S., Lopata, J., Shah, J., Rozier, R., Cunningham, J.E., d'Asaro, L.D.
Published in IEEE photonics technology letters (01.06.2000)
Published in IEEE photonics technology letters (01.06.2000)
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High-speed modulation of 850-nm intracavity contacted shallow implant-apertured vertical-cavity surface-emitting lasers
Dang, G., Hobson, W.S., Chirovsky, L.M.F., Lopata, J., Tayahi, M., Chu, S.N.G., Ren, F., Pearton, S.J.
Published in IEEE photonics technology letters (01.09.2001)
Published in IEEE photonics technology letters (01.09.2001)
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Inductively coupled Ar plasma damage in AlGaAs
LEE, J. W, HAYS, D, ABERNATHY, C. R, PEARTON, S. J, HOBSON, W. S, CONSTANTINE, C
Published in Journal of the Electrochemical Society (01.09.1997)
Published in Journal of the Electrochemical Society (01.09.1997)
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Comparison of dry and wet etch processes for patterning SiO2/TiO2 distributed Bragg reflectors for vertical-cavity surface-emitting lasers
DANG, G, CHO, H, IP, K. P, PEARTON, S. J, CHU, S. N. G, LOPATA, J, HOBSON, W. S, CHIROVSKY, L. M. F, REN, F
Published in Journal of the Electrochemical Society (01.02.2001)
Published in Journal of the Electrochemical Society (01.02.2001)
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VCSEL beam waists from optical spectra
Chirovsky, L.M.F., Boyd, G.D., Hobson, W.S., Lopata, J.
Published in IEEE photonics technology letters (01.06.2001)
Published in IEEE photonics technology letters (01.06.2001)
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Journal Article
Temperature characteristics of 850 nm, intra-cavity contacted, shallow implant-apertured vertical-cavity surface-emitting lasers
Dang, G, Luo, B, Ren, F, Hobson, W.S, Lopata, J, Pearton, S.J, Chang, W, Shen, H
Published in Solid-state electronics (01.08.2002)
Published in Solid-state electronics (01.08.2002)
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Journal Article
Finite difference analysis of thermal characteristics of CW operation 850 nm lateral current injection and implant-apertured VCSEL with flip-chip bond design
Mehandru, R., Dang, G., Kim, S., Ren, F., Hobson, W.S., Lopata, J., Pearton, S.J., Chang, W., Shen, H.
Published in Solid-state electronics (01.05.2002)
Published in Solid-state electronics (01.05.2002)
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Journal Article
Inductively coupled plasma etching of III-V semiconductors in BCl3-based chemistries II. InP, InGaAs, InGaAsP, InAs and AlInAs
MAEDA, T, LEE, J. W, SHUL, R. J, HAN, J, HONG, J, LAMBERS, E. S, PEARTON, S. J, ABERNATHY, C. R, HOBSON, W. S
Published in Applied surface science (01.04.1999)
Published in Applied surface science (01.04.1999)
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Characterization and annealing of Eu-doped GaN
Overberg, Mark, Lee, K.N., Abernathy, Cammy R., Pearton, Stephen J., Hobson, W.S., Wilson, Robert G., Zavada, John M.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (24.04.2001)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (24.04.2001)
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Conference Proceeding
Strain compensated InGaAs-GaAsP-InGaP laser
Dutta, N.K., Hobson, W.S., Vakhshoori, D., Han, H., Freeman, P.N., de Jong, J.F., Lopata, J.
Published in IEEE photonics technology letters (01.07.1996)
Published in IEEE photonics technology letters (01.07.1996)
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Journal Article
Characteristics of III-V dry etching in HBr-based discharges
PEARTON, S. J, CHAKRABARTI, U. K, LANE, E, PERLEY, A. P, ABERNATHY, C. R, HOBSON, W. S, JONES, K. S
Published in Journal of the Electrochemical Society (01.03.1992)
Published in Journal of the Electrochemical Society (01.03.1992)
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Conference Proceeding
Journal Article
Small and large signal performance and gain-switching of intra-cavity contacted, shallow implant apertured VCSELs
Hobson, W.S, Lopata, J, Chirovsky, L.M.F, Chu, S.N.G, Dang, G, Lou, B, Ren, F, Tayahi, M, Kilper, D.C, Pearton, S.J
Published in Solid-state electronics (01.09.2001)
Published in Solid-state electronics (01.09.2001)
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Journal Article
Dry etching of III-V semiconductors in IBr/Ar electron cyclotron resonance plasmas
LEE, J. W, HONG, J, LAMBERS, E. S, ABERNATHY, C. R, PEARTON, S. J, HOBSON, W. S, REN, F
Published in Journal of electronic materials (01.05.1997)
Published in Journal of electronic materials (01.05.1997)
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Carbon doping of III–V compounds grown by MOMBE
Abernathy, C.R., Pearton, S.J., Ren, F., Hobson, W.S., Fullowan, T.R., Katz, A., Jordan, A.S., Kovalchick, J.
Published in Journal of crystal growth (01.10.1990)
Published in Journal of crystal growth (01.10.1990)
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Conference Proceeding
Selective dry etching using inductively coupled plasmas: Part I. GaAs/AlGaAs and GaAs/InGaP
Hays, D.C, Cho, H, Jung, K.B, Hahn, Y.B, Abernathy, C.R, Pearton, S.J, Ren, F, Hobson, W.S
Published in Applied surface science (1999)
Published in Applied surface science (1999)
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Journal Article
Contactless electromodulation for the nondestructive, room-temperature analysis of wafer-sized semiconductor device structures
Pollak, F.H., Krystek, W., Leibovitch, M., Gray, M.L., Hobson, W.S.
Published in IEEE journal of selected topics in quantum electronics (01.12.1995)
Published in IEEE journal of selected topics in quantum electronics (01.12.1995)
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