Experimental observation of localized interfacial phonon modes
Cheng, Zhe, Li, Ruiyang, Yan, Xingxu, Jernigan, Glenn, Shi, Jingjing, Liao, Michael E, Hines, Nicholas J, Gadre, Chaitanya A, Idrobo, Juan Carlos, Lee, Eungkyu, Hobart, Karl D, Goorsky, Mark S, Pan, Xiaoqing, Luo, Tengfei, Graham, Samuel
Published in Nature communications (25.11.2021)
Published in Nature communications (25.11.2021)
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Anisotropic and inhomogeneous thermal conduction in suspended thin-film polycrystalline diamond
Sood, Aditya, Cho, Jungwan, Hobart, Karl D., Feygelson, Tatyana I., Pate, Bradford B., Asheghi, Mehdi, Cahill, David G., Goodson, Kenneth E.
Published in Journal of applied physics (07.05.2016)
Published in Journal of applied physics (07.05.2016)
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Journal Article
Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation
Yuhao Zhang, Zhihong Liu, Tadjer, Marko J., Min Sun, Piedra, Daniel, Hatem, Christopher, Anderson, Travis J., Luna, Lunet E., Nath, Anindya, Koehler, Andrew D., Okumura, Hironori, Jie Hu, Xu Zhang, Xiang Gao, Feigelson, Boris N., Hobart, Karl D., Palacios, Tomas
Published in IEEE electron device letters (01.08.2017)
Published in IEEE electron device letters (01.08.2017)
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Journal Article
Control of the in-plane thermal conductivity of ultra-thin nanocrystalline diamond films through the grain and grain boundary properties
Anaya, Julian, Rossi, Stefano, Alomari, Mohammed, Kohn, Erhard, Tóth, Lajos, Pécz, Béla, Hobart, Karl D., Anderson, Travis J., Feygelson, Tatyana I., Pate, Bradford B., Kuball, Martin
Published in Acta materialia (15.01.2016)
Published in Acta materialia (15.01.2016)
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Journal Article
Tunable Thermal Energy Transport across Diamond Membranes and Diamond–Si Interfaces by Nanoscale Graphoepitaxy
Cheng, Zhe, Bai, Tingyu, Shi, Jingjing, Feng, Tianli, Wang, Yekan, Mecklenburg, Matthew, Li, Chao, Hobart, Karl D, Feygelson, Tatyana I, Tadjer, Marko J, Pate, Bradford B, Foley, Brian M, Yates, Luke, Pantelides, Sokrates T, Cola, Baratunde A, Goorsky, Mark, Graham, Samuel
Published in ACS applied materials & interfaces (22.05.2019)
Published in ACS applied materials & interfaces (22.05.2019)
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Journal Article
GaN-On-Diamond HEMT Technology With TAVG = 176°C at PDC,max = 56 W/mm Measured by Transient Thermoreflectance Imaging
Tadjer, Marko J., Anderson, Travis J., Ancona, Mario G., Raad, Peter E., Komarov, Pavel, Bai, Tingyu, Gallagher, James C., Koehler, Andrew D., Goorsky, Mark S., Francis, Daniel A., Hobart, Karl D., Kub, Fritz J.
Published in IEEE electron device letters (01.06.2019)
Published in IEEE electron device letters (01.06.2019)
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Journal Article
Hybrid Edge Termination in Vertical GaN: Approximating Beveled Edge Termination via Discrete Implantations
Nelson, Tolen, Pandey, Prakash, Georgiev, Daniel G., Hontz, Michael R., Koehler, Andrew D., Hobart, Karl D., Anderson, Travis J., Ildefonso, Adrian, Khanna, Raghav
Published in IEEE transactions on electron devices (01.12.2022)
Published in IEEE transactions on electron devices (01.12.2022)
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Journal Article
Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques
Gallagher, James C, Ebrish, Mona A, Porter, Matthew A, Jacobs, Alan G, Gunning, Brendan P, Kaplar, Robert J, Hobart, Karl D, Anderson, Travis J
Published in Scientific reports (13.01.2022)
Published in Scientific reports (13.01.2022)
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Journal Article
High-Resolution Thermoreflectance Imaging Investigation of Self-Heating in AlGaN/GaN HEMTs on Si, SiC, and Diamond Substrates
Helou, Assaad El, Komarov, Pavel, Tadjer, Marko Jak, Anderson, Travis J., Francis, Daniel A., Feygelson, Tatyana, Pate, Bradford B., Hobart, Karl D., Raad, Peter E.
Published in IEEE transactions on electron devices (01.12.2020)
Published in IEEE transactions on electron devices (01.12.2020)
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Journal Article
Substrate-Dependent Effects on the Response of AlGaN/GaN HEMTs to 2-MeV Proton Irradiation
Anderson, Travis J., Koehler, Andrew D., Greenlee, Jordan D., Weaver, Bradley D., Mastro, Michael A., Hite, Jennifer K., Eddy, Charles R., Kub, Francis J., Hobart, Karl D.
Published in IEEE electron device letters (01.08.2014)
Published in IEEE electron device letters (01.08.2014)
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Journal Article
PtOx Schottky Contacts on Degenerately Doped 2¯01β-Ga2O3 Substrates
Spencer, Joseph A., Jacobs, Alan G., Hobart, Karl D., Koehler, Andrew D., Anderson, Travis J., Zhang, Yuhao, Tadjer, Marko J.
Published in Journal of electronic materials (01.06.2024)
Published in Journal of electronic materials (01.06.2024)
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Journal Article
Using machine learning with optical profilometry for GaN wafer screening
Gallagher, James C, Mastro, Michael A, Ebrish, Mona A, Jacobs, Alan G, Gunning, Brendan P, Kaplar, Robert J, Hobart, Karl D, Anderson, Travis J
Published in Scientific reports (27.02.2023)
Published in Scientific reports (27.02.2023)
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Journal Article
Novel Codoping Moiety to Achieve Enhanced P‐Type Doping in GaN by Ion Implantation
Jacobs, Alan G., Spencer, Joseph A., Hite, Jennifer K., Hobart, Karl D., Anderson, Travis J., Feigelson, Boris N.
Published in Physica status solidi. A, Applications and materials science (01.08.2023)
Published in Physica status solidi. A, Applications and materials science (01.08.2023)
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Journal Article
Hybrid Edge Termination for High-Voltage Vertical GaN Devices: Empirical Validation and Robust Processing Tolerance
Pandey, Prakash, Nelson, Tolen M., Hontz, Michael R., Georgiev, Daniel G., Khanna, Raghav, Jacobs, Alan G., Lundh, James S., Gallagher, James C., Koehler, Andrew D., Hobart, Karl D., Anderson, Travis J.
Published in IEEE transactions on electron devices (01.06.2024)
Published in IEEE transactions on electron devices (01.06.2024)
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Journal Article
A Simple Edge Termination Design for Vertical GaN P-N Diodes
Pandey, Prakash, Nelson, Tolen M., Collings, William M., Hontz, Michael R., Georgiev, Daniel G., Koehler, Andrew D., Anderson, Travis J., Gallagher, James C., Foster, Geoffrey M., Jacobs, Alan, Ebrish, Mona A., Gunning, Brendan P., Kaplar, Robert J., Hobart, Karl D., Khanna, Raghav
Published in IEEE transactions on electron devices (01.09.2022)
Published in IEEE transactions on electron devices (01.09.2022)
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Journal Article
Experimental Validation of Robust Hybrid Edge Termination Structures in Vertical GaN p-i-n Diodes With Avalanche Capability
Lundh, James Spencer, Jacobs, Alan G., Pandey, Prakash, Nelson, Tolen, Georgiev, Daniel G., Koehler, Andrew D., Khanna, Raghav, Tadjer, Marko J., Hobart, Karl D., Anderson, Travis J.
Published in IEEE electron device letters (01.05.2024)
Published in IEEE electron device letters (01.05.2024)
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Journal Article
Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates
Caldwell, Joshua D, Anderson, Travis J, Culbertson, James C, Jernigan, Glenn G, Hobart, Karl D, Kub, Fritz J, Tadjer, Marko J, Tedesco, Joseph L, Hite, Jennifer K, Mastro, Michael A, Myers-Ward, Rachael L, Eddy, Charles R, Campbell, Paul M, Gaskill, D. Kurt
Published in ACS nano (23.02.2010)
Published in ACS nano (23.02.2010)
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Journal Article
Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates
Tadjer, Marko J, Alema, Fikadu, Osinsky, Andrei, Mastro, Michael A, Nepal, Neeraj, Woodward, Jeffrey M, Myers-Ward, Rachael L, Glaser, Evan R, Freitas, Jaime A, Jacobs, Alan G, Gallagher, James C, Mock, Alyssa L, Pennachio, Daniel J, Hajzus, Jenifer, Ebrish, Mona, Anderson, Travis J, Hobart, Karl D, Hite, Jennifer K, Eddy Jr, Charles R
Published in Journal of physics. D, Applied physics (21.01.2021)
Published in Journal of physics. D, Applied physics (21.01.2021)
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Journal Article
Improving vertical GaN p–n diode performance with room temperature defect mitigation
Sultan Al-Mamun, Nahid, Gallagher, James, Jacobs, Alan G, Hobart, Karl D, Anderson, Travis J, Gunning, Brendan P, Kaplar, Robert J, Wolfe, Douglas E, Haque, Aman
Published in Semiconductor science and technology (01.01.2024)
Published in Semiconductor science and technology (01.01.2024)
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