AlGaN/GaN-on-Si monolithic power-switching device with integrated gate current booster
Han, Sang-Woo, Jo, Min-Gi, Kim, Hyungtak, Cho, Chun-Hyung, Cha, Ho-Young
Published in Solid-state electronics (01.08.2017)
Published in Solid-state electronics (01.08.2017)
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Journal Article
Analysis of Hot Carrier Degradation in 0.25-μm Schottky Gate AlGaN/GaN HEMTs
Cho, Seong-In, Jang, Won-Ho, Cha, Ho-Young, Kim, Hyungtak
Published in Journal of Electromagnetic Engineering and Science (01.05.2022)
Published in Journal of Electromagnetic Engineering and Science (01.05.2022)
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Journal Article
Surface Functionalized Graphene Biosensor on Sapphire for Cancer Cell Detection
Joe, Daniel J, Hwang, Jeonghyun, Johnson, Christelle, Cha, Ho-Young, Lee, Jo-Won, Shen, Xiling, Spencer, Michael G, Tiwari, Sandip, Kim, Moonkyung
Published in Journal of nanoscience and nanotechnology (01.01.2016)
Published in Journal of nanoscience and nanotechnology (01.01.2016)
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Journal Article
Au-free AlGaN GaN heterostructure field-effect transistor with recessed overhang ohmic contacts using a Ti Al bilayer
Lee, Jae-Gil, Kim, Hyun-Seop, Kim, Dong-Hwan, Han, Sang-Woo, Seo, Kwang-Seok, Cha, Ho-Young
Published in Semiconductor science and technology (01.08.2015)
Published in Semiconductor science and technology (01.08.2015)
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Journal Article
State-of-the-Art AlGaN/GaN-on-Si Heterojunction Field Effect Transistors with Dual Field Plates
Lee, Jae-Gil, Park, Bong-Ryeol, Lee, Ho-Jung, Lee, Minseong, Seo, Kwang-Seok, Cha, Ho-Young
Published in Applied physics express (01.06.2012)
Published in Applied physics express (01.06.2012)
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Journal Article
Unidirectional AlGaN/GaN-on-Si HFETs with reverse blocking drain
Lee, Jae-Gil, Han, Sang-Woo, Park, Bong-Ryeol, Cha, Ho-Young
Published in Applied physics express (01.01.2014)
Published in Applied physics express (01.01.2014)
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Journal Article
Schottky barrier diode embedded AlGaN GaN switching transistor
Park, Bong-Ryeol, Lee, Jung-Yeon, Lee, Jae-Gil, Lee, Dong-Myung, Kim, Moon-Kyung, Cha, Ho-Young
Published in Semiconductor science and technology (01.12.2013)
Published in Semiconductor science and technology (01.12.2013)
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Journal Article
Ohmic contact using the Si nano-interlayer for undoped-AlGaN/GaN heterostructures
Cha, Ho-Young, Chen, X., Wu, H., Schaff, W. J., Spencer, M. G., Eastman, L. F.
Published in Journal of electronic materials (01.03.2006)
Published in Journal of electronic materials (01.03.2006)
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Journal Article
Improvement of V Instability in Normally-Off GaN MIS-HEMTs Employing \hbox as an Interfacial Layer
Choi, Woojin, Ryu, Hojin, Jeon, Namcheol, Lee, Minseong, Cha, Ho-Young, Seo, Kwang-Seok
Published in IEEE electron device letters (01.01.2014)
Published in IEEE electron device letters (01.01.2014)
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Journal Article
Structural effects on heat dissipation in InGaAs MHEMTs
Noh, Jinhyun, Ryoo, Yeonmi, Jeon, Namcheol, Cha, Ho-Young, Seo, Kwang-Seok
Published in Semiconductor science and technology (01.04.2013)
Published in Semiconductor science and technology (01.04.2013)
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Journal Article
Extraction of the interface trap density through the differential subthreshold ideality factor technique in normally-off AlGaN/GaN MOSHFETs
Kang, Youngjin, Cha, Ho-Young, Kim, Hyungtak, Choi, Sungju, Kim, Dae Hwan
Published in Journal of the Korean Physical Society (01.04.2015)
Published in Journal of the Korean Physical Society (01.04.2015)
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