Effect of Hole-Trap Distribution on the Power-Law Time Exponent of NBTI
Ang, D.S., Lai, S.C.S., Du, G.A., Teo, Z.Q., Ho, T.J.J., Hu, Y.Z.
Published in IEEE electron device letters (01.07.2009)
Published in IEEE electron device letters (01.07.2009)
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Journal Article
Role of Nitrogen on the Gate Length Dependence of NBTI
Ho, T.J.J., Ang, D.S., Tang, L.J., Phua, T.W.H., Ng, C.M.
Published in IEEE electron device letters (01.07.2009)
Published in IEEE electron device letters (01.07.2009)
Get full text
Journal Article