ZrS2 symmetrical-ambipolar FETs with near-midgap TiN film for both top-gate electrode and Schottky-barrier contact
Hamada, Masaya, Matsuura, Kentaro, Hamada, Takuya, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi
Published in Japanese Journal of Applied Physics (01.05.2021)
Published in Japanese Journal of Applied Physics (01.05.2021)
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Journal Article
Ohmic contact between titanium and sputtered MoS 2 films achieved by forming-gas annealing
Toyama, Mayato, Ohashi, Takumi, Matsuura, Kentaro, Shimizu, Jun’ichi, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi
Published in Japanese Journal of Applied Physics (01.07.2018)
Published in Japanese Journal of Applied Physics (01.07.2018)
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Journal Article
Ohmic contact between titanium and sputtered MoS^sub 2^ films achieved by forming-gas annealing
Toyama, Mayato, Ohashi, Takumi, Matsuura, Kentaro, Shimizu, Jun'ichi, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi
Published in Japanese Journal of Applied Physics (01.07.2018)
Published in Japanese Journal of Applied Physics (01.07.2018)
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Journal Article
Future Perspectives of CMOS Logic Innovation Beyond 2nm
Hiramoto, Toshiro, Wakabayashi, Hitoshi
Published in 2024 IEEE Silicon Nanoelectronics Workshop (SNW) (15.06.2024)
Published in 2024 IEEE Silicon Nanoelectronics Workshop (SNW) (15.06.2024)
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Conference Proceeding
Normally-off sputtered-MoS 2 nMISFETs with TiN top-gate electrode all defined by optical lithography for chip-level integration
Matsuura, Kentaro, Hamada, Masaya, Hamada, Takuya, Tanigawa, Haruki, Sakamoto, Takuro, Hori, Atsushi, Muneta, Iriya, Kawanago, Takamasa, Kakushima, Kuniyuki, Tsutsui, Kazuo, Ogura, Atsushi, Wakabayashi, Hitoshi
Published in Japanese Journal of Applied Physics (01.08.2020)
Published in Japanese Journal of Applied Physics (01.08.2020)
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Journal Article
The Electronic and Physical Structure Evaluation of MoS2(1−x)Te2x Alloy Fabricated with Co-Sputtering and Post-Deposition Annealing in Chalcogen Ambient
Hibino, Yusuke, Yamazaki, Kota, Hashimoto, Yusuke, Otsuka, Yosuke, Sawamoto, Naomi, Machida, Hideaki, Ishikawa, Masato, Sudoh, Hiroshi, Wakabayashi, Hitoshi, Ogura, Atsushi
Published in ECS journal of solid state science and technology (30.11.2020)
Published in ECS journal of solid state science and technology (30.11.2020)
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Journal Article
Reduction of conductance mismatch in Fe/Al 2 O 3 /MoS 2 system by tunneling-barrier thickness control
Hayakawa, Naoki, Muneta, Iriya, Ohashi, Takumi, Matsuura, Kentaro, Shimizu, Jun’ichi, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi
Published in Japanese Journal of Applied Physics (01.04.2018)
Published in Japanese Journal of Applied Physics (01.04.2018)
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Journal Article
Reduction of conductance mismatch in Fe/Al^sub 2^O^sub 3^/MoS^sub 2^ system by tunneling-barrier thickness control
Hayakawa, Naoki, Muneta, Iriya, Ohashi, Takumi, Matsuura, Kentaro, Shimizu, Jun'ichi, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi
Published in Japanese Journal of Applied Physics (01.04.2018)
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Published in Japanese Journal of Applied Physics (01.04.2018)
Journal Article
Differences in rectal temperatures measured at depths of 4–19 cm from the anal sphincter during exercise and rest
Lee, Joo-Young, Wakabayashi, Hitoshi, Wijayanto, Titis, Tochihara, Yutaka
Published in European journal of applied physiology (01.05.2010)
Published in European journal of applied physiology (01.05.2010)
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Journal Article
Conference Proceeding
The Electronic and Physical Structure Evaluation of MoS 2(1−x) Te 2 x Alloy Fabricated with Co-Sputtering and Post-Deposition Annealing in Chalcogen Ambient
Hibino, Yusuke, Yamazaki, Kota, Hashimoto, Yusuke, Otsuka, Yosuke, Sawamoto, Naomi, Machida, Hideaki, Ishikawa, Masato, Sudoh, Hiroshi, Wakabayashi, Hitoshi, Ogura, Atsushi
Published in ECS journal of solid state science and technology (01.10.2020)
Published in ECS journal of solid state science and technology (01.10.2020)
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Journal Article
High field-effect mobility with suppressed negative threshold voltage shift in 4H-SiC MOSFET with cerium oxide interfacial layer
Song, Jinhan, Ohta, Atsuhiro, Hoshii, Takuya, Wakabayashi, Hitoshi, Tsutsui, Kazuo, Kakushima, Kuniyuki
Published in Japanese Journal of Applied Physics (01.03.2021)
Published in Japanese Journal of Applied Physics (01.03.2021)
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Journal Article
Supply-voltage optimization for below-70-nm technology-node MOSFETs
Wakabayashi, H., Samudra, G.S., Djomehri, I.J., Nayfeh, H., Antoniadis, D.A.
Published in IEEE transactions on semiconductor manufacturing (01.05.2002)
Published in IEEE transactions on semiconductor manufacturing (01.05.2002)
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Journal Article
WS 2 Film by Sputtering and Sulfur-Vapor Annealing, and its p MISFET With TiN/HfO 2 Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box
Hamada, Takuya, Hamada, Masaya, Igarashi, Satoshi, Horiguchi, Taiga, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Tatsumi, Tetsuya, Tomiya, Shigetaka, Wakabayashi, Hitoshi
Published in IEEE journal of the Electron Devices Society (2021)
Published in IEEE journal of the Electron Devices Society (2021)
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Journal Article
Electrical Characteristics of Atomic Layer Deposited Y-Silicate Dielectrics
Ohta, Atsuhiro, Song, Jinhan, Hoshii, Takuya, Wakabayashi, Hitoshi, Tsutsui, Kazuo, Kakushima, Kuniyuki
Published in ECS transactions (08.09.2020)
Published in ECS transactions (08.09.2020)
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Journal Article
Ferroelectric HfO 2 Capacitors for Varactor Application in GHz
Lin, Yu Wei, Mizutani, Kazuto, Hoshii, Takuya, Wakabayashi, Hitoshi, Tsutsui, Kazuo, Tsao, Yi-Fan, Huang, Ting-Jui, Hsu, Heng-Tung, Kakushima, Kuniyuki
Published in ECS transactions (08.09.2020)
Published in ECS transactions (08.09.2020)
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Journal Article
Suppression of Sulfur Desorption of High-Temperature Sputtered MoS 2 Film by Applying DC Bias
Hibino, Yusuke, Ishihara, Seiya, Oyanagi, Yuya, Sawamoto, Naomi, Ohashi, Takumi, Matsuura, Kentarou, Wakabayashi, Hitoshi, Ogura, Atsushi
Published in ECS transactions (19.06.2018)
Published in ECS transactions (19.06.2018)
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Journal Article
Investigation on Mo1−xWxS2 fabricated by co-sputtering and post-deposition sulfurization with (t-C4H9)2S2
Hibino, Yusuke, Ishihara, Seiya, Sawamoto, Naomi, Ohashi, Takumi, Matsuura, Kentarou, Machida, Hideaki, Ishikawa, Masato, Sudoh, Hiroshi, Wakabayashi, Hitoshi, Ogura, Atsushi
Published in Japanese Journal of Applied Physics (01.06.2018)
Published in Japanese Journal of Applied Physics (01.06.2018)
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Journal Article
Interface State Density of Atomic Layer Deposited Al 2 O 3 on β -Ga 2 O 3
Su, Chen Yi, Hoshii, Takuya, Muneta, Iriya, Wakabayashi, Hitoshi, Tsutsui, Kazuo, Iwai, Hiroshi, Kakushima, Kuniyuki
Published in ECS transactions (09.04.2018)
Published in ECS transactions (09.04.2018)
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Journal Article