Self-aligned-TiSi 2 bottom contact with APM cleaning and post-annealing for sputtered-MoS 2 film
Igarashi, Satoshi, Mochizuki, Yusuke, Tanigawa, Haruki, Hamada, Masaya, Matsuura, Kentaro, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi
Published in Japanese Journal of Applied Physics (01.05.2021)
Published in Japanese Journal of Applied Physics (01.05.2021)
Get full text
Journal Article
Importance of crystallinity improvement in MoS 2 film by compound sputtering even followed by post sulfurization
Imai, Shinya, Hamada, Takuya, Hamada, Masaya, Shirokura, Takanori, Muneta, Iriya, Kakushima, Kuniyuki, Tatsumi, Tetsuya, Tomiya, Shigetaka, Tsutsui, Kazuo, Wakabayashi, Hitoshi
Published in Japanese Journal of Applied Physics (01.05.2021)
Published in Japanese Journal of Applied Physics (01.05.2021)
Get full text
Journal Article
GaN high electron mobility transistors (HEMTs) with self-upward-polarized AlScN gate dielectrics toward enhancement-mode operation
Chen, Si-Meng, Tsai, Sung-Lin, Mizutani, Kazuto, Hoshii, Takuya, Wakabayashi, Hitoshi, Tsutsui, Kazuo, Chang, Edward Yi, Kakushima, Kuniyuki
Published in Japanese Journal of Applied Physics (01.07.2022)
Published in Japanese Journal of Applied Physics (01.07.2022)
Get full text
Journal Article
Electrical Characterization of Sputter Deposited AlxSc1-XN Thin Films
Tsai, SungLin, Kusafuka, Kazuki, Hoshii, Takuya, Wakabayashi, Hitoshi, Tsutsui, Kazuo, Kakushima, Kuniyuki
Published in ECS transactions (24.04.2020)
Published in ECS transactions (24.04.2020)
Get full text
Journal Article
Elucidation of PVD MoS 2 film formation process and its structure focusing on sub-monolayer region
Ono, Ryo, Imai, Shinya, Kusama, Yuta, Hamada, Takuya, Hamada, Masaya, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Kano, Emi, Ikarashi, Nobuyuki, Wakabayashi, Hitoshi
Published in Japanese Journal of Applied Physics (01.05.2022)
Published in Japanese Journal of Applied Physics (01.05.2022)
Get full text
Journal Article
Formation of Nickel Self-Aligned Silicide by Using Cyclic Deposition Method
Terashima, Koichi, Miura, Yoshinao, Ikarashi, Nobuyuki, Oshida, Makiko, Manabe, Kenzo, Yoshihara, Takuya, Tanaka, Masayasu, Wakabayashi, Hitoshi
Published in Japanese Journal of Applied Physics (01.04.2005)
Published in Japanese Journal of Applied Physics (01.04.2005)
Get full text
Journal Article
Effect of Growth Parameters on MoS2 Film Quality Deposited by Low-Temperature MOCVD Using I-Pr2DADmo(CO)3 and (t-C4H9)2S2
Kirito, CHO, Yamazaki, Kota, Hibino, Yusuke, Hashimoto, Yusuke, Machida, Hideaki, Ishikawa, Masato, Sudoh, Hiroshi, Wakabayashi, Hitoshi, Yokogawa, Ryo, Ogura, Atsushi
Published in ECS transactions (01.10.2021)
Published in ECS transactions (01.10.2021)
Get full text
Journal Article
Effect of Growth Parameters on MoS 2 Film Quality Deposited by Low-Temperature MOCVD Using I-Pr 2 DADmo(CO) 3 and (t-C 4 H 9 ) 2 S 2
Kirito, CHO, Yamazaki, Kota, Hibino, Yusuke, Hashimoto, Yusuke, Machida, Hideaki, Ishikawa, Masato, Sudoh, Hiroshi, Wakabayashi, Hitoshi, Yokogawa, Ryo, Ogura, Atsushi
Published in ECS transactions (01.10.2021)
Published in ECS transactions (01.10.2021)
Get full text
Journal Article
Electrical Characterization of Sputter Deposited Al x Sc 1-X N Thin Films
Tsai, SungLin, Kusafuka, Kazuki, Hoshii, Takuya, Wakabayashi, Hitoshi, Tsutsui, Kazuo, Kakushima, Kuniyuki
Published in ECS transactions (24.04.2020)
Published in ECS transactions (24.04.2020)
Get full text
Journal Article
Switching Dynamics Measurement of Ferroelectric Y-Doped HfO 2 M-I-M Capacitor
Lin, YuWei, Mizutani, Kazuto, Hoshii, Takuya, Wakabayashi, Hitoshi, Tsutsui, Kazuo, Kakushima, Kuniyuki
Published in ECS transactions (24.04.2020)
Published in ECS transactions (24.04.2020)
Get full text
Journal Article
Switching Dynamics Measurement of Ferroelectric Y-Doped HfO2 M-I-M Capacitor
Lin, YuWei, Mizutani, Kazuto, Hoshii, Takuya, Wakabayashi, Hitoshi, Tsutsui, Kazuo, Kakushima, Kuniyuki
Published in ECS transactions (24.04.2020)
Published in ECS transactions (24.04.2020)
Get full text
Journal Article
Hall-effect mobility enhancement of sputtered MoS 2 film by sulfurization even through Al 2 O 3 passivation film simultaneously preventing oxidation
Hamada, Masaya, Matsuura, Kentaro, Sakamoto, Takuro, Tanigawa, Haruki, Muneta, Iriya, Hoshii, Takuya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi
Published in Japanese Journal of Applied Physics (01.10.2020)
Published in Japanese Journal of Applied Physics (01.10.2020)
Get full text
Journal Article
Band gap-tuned MoS2(1−x)Te2 x thin films synthesized by a hybrid Co-sputtering and post-deposition tellurization annealing process
Hibino, Yusuke, Ishihara, Seiya, Sawamoto, Naomi, Ohashi, Takumi, Matsuura, Kentarou, Machida, Hideaki, Wakabayashi, Hitoshi, Ogura, Atsushi
Published in Journal of materials research (2017)
Published in Journal of materials research (2017)
Get full text
Journal Article
NiSi 2 as a bottom electrode for enhanced endurance of ferroelectric Y-doped HfO 2 thin films
Molina-Reyes, Joel, Hoshii, Takuya, Ohmi, Shun-Ichiro, Funakubo, Hiroshi, Hori, Atsushi, Fujiwara, Ichiro, Wakabayashi, Hitoshi, Tsutsui, Kazuo, Kakushima, Kuniyuki
Published in Japanese Journal of Applied Physics (01.04.2020)
Published in Japanese Journal of Applied Physics (01.04.2020)
Get full text
Journal Article
Low-carrier density sputtered-MoS2 film by H2S annealing for normally-off accumulation-mode FET
Shimizu, Jun'ichi, Ohashi, Takumi, Matsuura, Kentaro, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Ikarashi, Nobuyuki, Wakabayashi, Hitoshi
Published in 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) (01.02.2017)
Published in 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) (01.02.2017)
Get full text
Conference Proceeding
High-mobility and low-carrier-density sputtered MoS2 film formed by introducing residual sulfur during low-temperature in 3%-H2 annealing for three-dimensional ICs
Shimizu, Jun ichi, Ohashi, Takumi, Matsuura, Kentaro, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi
Published in Japanese Journal of Applied Physics (01.04.2017)
Published in Japanese Journal of Applied Physics (01.04.2017)
Get full text
Journal Article
Chemical states of PVD-ZrS2 film underneath scaled high-k film with self-oxidized ZrO2 film as interfacial layer
Otomo, Masaki, Hamada, Masaya, Ono, Ryo, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi
Published in Japanese Journal of Applied Physics (01.04.2023)
Published in Japanese Journal of Applied Physics (01.04.2023)
Get full text
Journal Article
Multi-layered MoS2 film formed by high-temperature sputtering for enhancement-mode nMOSFETs
Ohashi, Takumi, Suda, Kohei, Ishihara, Seiya, Sawamoto, Naomi, Yamaguchi, Shimpei, Matsuura, Kentaro, Kakushima, Kuniyuki, Sugii, Nobuyuki, Nishiyama, Akira, Kataoka, Yoshinori, Natori, Kenji, Tsutsui, Kazuo, Iwai, Hiroshi, Ogura, Atsushi, Wakabayashi, Hitoshi
Published in Japanese Journal of Applied Physics (01.04.2015)
Published in Japanese Journal of Applied Physics (01.04.2015)
Get full text
Journal Article