Activation of Mg implanted in GaN by multicycle rapid thermal annealing
Anderson, T.J, Feigelson, B.N, Kub, F.J, Tadjer, M.J, Hobart, K.D, Mastro, M.A, Hite, J.K, Eddy, C.R
Published in Electronics letters (30.01.2014)
Published in Electronics letters (30.01.2014)
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Journal Article
Long range, non-destructive characterization of GaN substrates for power devices
Gallagher, J.C., Anderson, T.J., Luna, L.E., Koehler, A.D., Hite, J.K., Mahadik, N.A., Hobart, K.D., Kub, F.J.
Published in Journal of crystal growth (15.01.2019)
Published in Journal of crystal growth (15.01.2019)
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Journal Article
An AlN/Ultrathin AlGaN/GaN HEMT Structure for Enhancement-Mode Operation Using Selective Etching
Anderson, T.J., Tadjer, M.J., Mastro, M.A., Hite, J.K., Hobart, K.D., Eddy, C.R., Kub, F.J.
Published in IEEE electron device letters (01.12.2009)
Published in IEEE electron device letters (01.12.2009)
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Journal Article
GaN vertical and lateral polarity heterostructures on GaN substrates
Hite, J.K., Bassim, N.D., Twigg, M.E., Mastro, M.A., Kub, F.J., Eddy, C.R.
Published in Journal of crystal growth (01.10.2011)
Published in Journal of crystal growth (01.10.2011)
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Journal Article
Enhancement of light extraction efficiency of ultraviolet light emitting diodes by patterning of SiO2 nanosphere arrays
Kim, B.J., Jung, H., Shin, J., Mastro, M.A., Eddy, C.R., Hite, J.K., Kim, S.H., Bang, J., Kim, J.
Published in Thin solid films (27.02.2009)
Published in Thin solid films (27.02.2009)
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Journal Article
Characterization of Recessed-Gate AlGaN/GaN HEMTs as a Function of Etch Depth
Anderson, T.J., Tadjer, M.J., Mastro, M.A., Hite, J.K., Hobart, K.D., Eddy, C.R., Kub, F.J.
Published in Journal of electronic materials (01.05.2010)
Published in Journal of electronic materials (01.05.2010)
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Journal Article
GaN single crystals of different habit grown from solution at near atmospheric pressure
Feigelson, B.N., Hite, J.K., Garces, N.Y., Freitas, J.A., Tischler, J.G., Klein, P.B.
Published in Journal of crystal growth (01.09.2010)
Published in Journal of crystal growth (01.09.2010)
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Journal Article
Effect of Si Co Doping on Ferromagnetic Properties of GaGdN
Hite, J.K., Frazier, R.M., Davies, R.P., Thaler, G.T., Abernathy, C.R., Pearton, S.J., Zavada, J.M., Brown, E., Hömmerich, U.
Published in Journal of electronic materials (01.04.2007)
Published in Journal of electronic materials (01.04.2007)
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Journal Article
Influence of HVPE substrates on homoepitaxy of GaN grown by MOCVD
Hite, J.K., Anderson, T.J., Luna, L.E., Gallagher, J.C., Mastro, M.A., Freitas, J.A., Eddy, C.R.
Published in Journal of crystal growth (15.09.2018)
Published in Journal of crystal growth (15.09.2018)
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Journal Article
Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN
Feigelson, B.N., Anderson, T.J., Abraham, M., Freitas, J.A., Hite, J.K., Eddy, C.R., Kub, F.J.
Published in Journal of crystal growth (01.07.2012)
Published in Journal of crystal growth (01.07.2012)
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Journal Article
Conference Proceeding
Correlation of threading screw dislocation density to GaN 2‐DEG mobility
Hite, J.K., Gaddipati, P., Meyer, D.J., Mastro, M.A., Eddy, C.R.
Published in Electronics letters (06.11.2014)
Published in Electronics letters (06.11.2014)
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Journal Article
Nature of luminescence and strain in gallium nitride nanowires
Mastro, M.A., Maximenko, S., Gowda, M., Simpkins, B.S., Pehrsson, P.E., Long, J.P., Makinen, A.J., Freitas, J.A., Hite, J.K., Eddy, C.R., Kim, J.
Published in Journal of crystal growth (01.05.2009)
Published in Journal of crystal growth (01.05.2009)
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Journal Article
Conference Proceeding
Space Charge Limited Current and Polarization in AlGaN/GaN Nanowires
Mastro, Michael, Kim, H.-Y., Ahn, J., Kim, J., Hite, J.K., Eddy, C.R.
Published in ECS transactions (01.01.2011)
Published in ECS transactions (01.01.2011)
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Journal Article
Improved GaN-based HEMT performance by nanocrystalline diamond capping
Anderson, T.J., Pate, B.B., Binari, S.C., Eddy, C.R., Hobart, K.D., Tadjer, M.J., Feygelson, T.I., Imhoff, E.A., Meyer, D.J., Katzer, D.S., Hite, J.K., Kub, F.J.
Published in 70th Device Research Conference (01.06.2012)
Published in 70th Device Research Conference (01.06.2012)
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Conference Proceeding
Defect reduction via confined epitaxial growth of GaN
Hite, J.K., Mastro, M.A., Eddy, C.R.
Published in 2009 International Semiconductor Device Research Symposium (01.12.2009)
Published in 2009 International Semiconductor Device Research Symposium (01.12.2009)
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Conference Proceeding
Enhancement mode AlN/ultrathin AlGaN/GaN HEMTs using selective wet etching
Anderson, T.J., Tadjer, M.J., Mastro, M.A., Hite, J.K., Hobart, K.D., Eddy, C.R., Kub, F.J.
Published in 2009 International Semiconductor Device Research Symposium (01.12.2009)
Published in 2009 International Semiconductor Device Research Symposium (01.12.2009)
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Conference Proceeding