16 x 8 quantum dot array operation at cryogenic temperatures
Lee, Noriyuki, Tsuchiya, Ryuta, Kanno, Yusuke, Mine, Toshiyuki, Sasago, Yoshitaka, Shinkai, Go, Mizokuchi, Raisei, Yoneda, Jun, Kodera, Tetsuo, Yoshimura, Chihiro, Saito, Shinichi, Hisamoto, Digh, Mizuno, Hiroyuki
Published in Japanese Journal of Applied Physics (01.05.2022)
Published in Japanese Journal of Applied Physics (01.05.2022)
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Journal Article
Modified Interface State Charge Model for 4H-SiC Power MOSFETs
Hisamoto, Digh, Yoshimoto, Hiroyuki, Tega, Naoki
Published in IEEE electron device letters (01.05.2015)
Published in IEEE electron device letters (01.05.2015)
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Journal Article
Electron-Trap and Hole-Trap Distributions in Metal/Oxide/Nitride/Oxide/Silicon Structures
Ishida, T., Mine, T., Hisamoto, D., Shimamoto, Y., Yamada, R.
Published in IEEE transactions on electron devices (01.02.2013)
Published in IEEE transactions on electron devices (01.02.2013)
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Journal Article
Metal Schottky Source/Drain Technology for Ultrathin Silicon-on-Thin-Box Metal Oxide Semiconductor Field Effect Transistors
Shima, Akio, Sugii, Nobuyuki, Mise, Nobuyuki, Hisamoto, Digh, Takeda, Ken-ichi, Torii, Kazuyoshi
Published in Japanese Journal of Applied Physics (01.04.2011)
Published in Japanese Journal of Applied Physics (01.04.2011)
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Journal Article
Metal Schottky Source/Drain Technology for Ultrathin Silicon-on-Thin-Box Metal Oxide Semiconductor Field Effect Transistors
Shima, Akio, Sugii, Nobuyuki, Mise, Nobuyuki, Hisamoto, Digh, Takeda, Ken-ichi, Torii, Kazuyoshi
Published in Japanese Journal of Applied Physics (01.04.2011)
Published in Japanese Journal of Applied Physics (01.04.2011)
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Journal Article
Electro-Luminescence from Ultra-Thin Silicon
Saito, Shin-ichi, Hisamoto, Digh, Shimizu, Haruka, Hamamura, Hirotaka, Tsuchiya, Ryuta, Matsui, Yuichi, Mine, Toshiyuki, Arai, Tadashi, Sugii, Nobuyuki, Torii, Kazuyoshi, Kimura, Shin'ichiro, Onai, Takahiro
Published in Japanese Journal of Applied Physics (01.07.2006)
Published in Japanese Journal of Applied Physics (01.07.2006)
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Journal Article
Electron charge sensor with hole current operating at cryogenic temperature
Hisamoto, Digh, Lee, Noriyuki, Tsuchiya, Ryuta, Mine, Toshiyuki, Utsugi, Takeru, Saito, Shinichi, Mizuno, Hiroyuki
Published in Applied physics express (01.03.2023)
Published in Applied physics express (01.03.2023)
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Journal Article
Electron trapping characteristics and scalability of HfO2 as a trapping layer in SONOS-type flash memories
Hamamura, H., Ishida, T., Toshiyuki Mine, Okuyama, Y., Digh Hisamoto, Shimamoto, Y., Kimura, S., Kazuyoshi Torii
Published in 2008 IEEE International Reliability Physics Symposium (01.04.2008)
Published in 2008 IEEE International Reliability Physics Symposium (01.04.2008)
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Conference Proceeding
Channel Properties of SiC Trench-Etched Double-Implanted MOS (TED MOS)
Tega, Naoki, Hisamoto, Digh, Shima, Akio, Shimamoto, Yasuhiro
Published in IEEE transactions on electron devices (01.09.2016)
Published in IEEE transactions on electron devices (01.09.2016)
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Journal Article
Investigation of interface state density near conduction band edge of 4H-SiC MOSFET based on inversion capacitance and drain-current characteristics
Sato, Shintaroh, Kobayashi, Keisuke, Mori, Yuki, Hisamoto, Digh, Shima, Akio
Published in Japanese Journal of Applied Physics (01.04.2020)
Published in Japanese Journal of Applied Physics (01.04.2020)
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Journal Article
Single-electron pump in a quantum dot array for silicon quantum computers
Utsugi, Takeru, Lee, Noriyuki, Tsuchiya, Ryuta, Mine, Toshiyuki, Mizokuchi, Raisei, Yoneda, Jun, Kodera, Tetsuo, Saito, Shinichi, Hisamoto, Digh, Mizuno, Hiroyuki
Published in Japanese Journal of Applied Physics (01.04.2023)
Published in Japanese Journal of Applied Physics (01.04.2023)
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Journal Article
The Historical Development Of Non-Planar Devices
Hisamoto, Digh
Published in 2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA) (22.04.2024)
Published in 2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA) (22.04.2024)
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Conference Proceeding
QUANTUM COMPUTER, AND SINGLE ELECTRON/SINGLE HOLE TRANSPORT METHOD
SEKIGUCHI Tomonori, UTSUGI Takeru, KUNO Takuma, TSUCHIYA Ryuta, MINE Toshiyuki, HISAMOTO Digh, LEE Noriyuki
Year of Publication 06.09.2024
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Year of Publication 06.09.2024
Patent
1.2-kV SiC Trench-Etched Double-Diffused MOS (TED-MOS)
Watanabe, Naoki, Bu, Yuan, Miki, Hiroshi, Tega, Naoki, Suto, Takeru, Mori, Yuki, Hisamoto, Digh, Shima, Akio
Published in Materials science forum (19.07.2019)
Published in Materials science forum (19.07.2019)
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Journal Article
Random telegraph noise from resonant tunnelling at low temperatures
Li, Zuo, Sotto, Moïse, Liu, Fayong, Husain, Muhammad Khaled, Yoshimoto, Hiroyuki, Sasago, Yoshitaka, Hisamoto, Digh, Tomita, Isao, Tsuchiya, Yoshishige, Saito, Shinichi
Published in Scientific reports (10.01.2018)
Published in Scientific reports (10.01.2018)
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Journal Article