Enhancing electrostatic coupling in silicon quantum dot array by dual gate oxide thickness for large-scale integration
Lee, N., Tsuchiya, R., Shinkai, G., Kanno, Y., Mine, T., Takahama, T., Mizokuchi, R., Kodera, T., Hisamoto, D., Mizuno, H.
Published in Applied physics letters (20.04.2020)
Published in Applied physics letters (20.04.2020)
Get full text
Journal Article
FinFET-a self-aligned double-gate MOSFET scalable to 20 nm
Hisamoto, D., Wen-Chin Lee, Kedzierski, J., Takeuchi, H., Asano, K., Kuo, C., Anderson, E., Tsu-Jae King, Bokor, J., Chenming Hu
Published in IEEE transactions on electron devices (01.12.2000)
Published in IEEE transactions on electron devices (01.12.2000)
Get full text
Journal Article
Sub-50 nm P-channel FinFET
Xuejue Huang, Wen-Chin Lee, Kuo, C., Hisamoto, D., Leland Chang, Kedzierski, J., Anderson, E., Takeuchi, H., Yang-Kyu Choi, Asano, K., Subramanian, V., Tsu-Jae King, Bokor, J., Chenming Hu
Published in IEEE transactions on electron devices (01.05.2001)
Published in IEEE transactions on electron devices (01.05.2001)
Get full text
Journal Article
Anomalous Electron Storage Decrease in MONOS' Nitride Layers Thinner Than 4 nm
Ishida, T., Mine, T., Hisamoto, D., Shimamoto, Y., Yamada, R.
Published in IEEE electron device letters (01.08.2008)
Published in IEEE electron device letters (01.08.2008)
Get full text
Journal Article
FD-SOI MOSFETs for the low-voltage nanoscale CMOS era
Itoh, K., Sugii, N., Hisamoto, D., Tsuchiya, R.
Published in 2009 IEEE International SOI Conference (01.10.2009)
Published in 2009 IEEE International SOI Conference (01.10.2009)
Get full text
Conference Proceeding
High-radiation Hardness 4H-SiC Transimpedance Amplifier featuring Stable Offset-voltage for Analog Sensors in Nuclear Power Plants
Masunaga, M., Kuwana, R., Egawa, K., Hayashi, H., Kawamura, T., Hara, I., Hisamoto, D., Ryuzaki, D.
Published in 2020 IEEE International Electron Devices Meeting (IEDM) (12.12.2020)
Published in 2020 IEEE International Electron Devices Meeting (IEDM) (12.12.2020)
Get full text
Conference Proceeding
Analysis of statistical variation in NBTI degradation of HfO2/SiO2 FETs
Yoshimoto, H, Hisamoto, D, Shimamoto, Y, Tsuchiya, R, Yanagi, I, Arigane, T, Torii, K, Funayama, K, Hashimoto, T, Makiyama, H, Horita, K, Iwamatsu, T, Shiga, K, Mizutani, M, Inoue, M, Kaneoka, T
Published in 2010 IEEE International Reliability Physics Symposium (01.05.2010)
Published in 2010 IEEE International Reliability Physics Symposium (01.05.2010)
Get full text
Conference Proceeding
Effects of interface properties in SiC MOSFETs on reliability
Mori, Y., Hisamoto, D., Tega, N., Matsumura, M., Yoshimoto, H., Shima, A., Shimamoto, Y.
Published in 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (01.06.2015)
Published in 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (01.06.2015)
Get full text
Conference Proceeding
First demonstration of FinFET split-gate MONOS for high-speed and highly-reliable embedded flash in 16/14nm-node and beyond
Tsuda, S., Kawashima, Y., Sonoda, K., Yoshitomi, A., Mihara, T., Narumi, S., Inoue, M., Muranaka, S., Maruyama, T., Yamashita, T., Yamaguchi, Y., Hisamoto, D.
Published in 2016 IEEE International Electron Devices Meeting (IEDM) (01.12.2016)
Published in 2016 IEEE International Electron Devices Meeting (IEDM) (01.12.2016)
Get full text
Conference Proceeding
An experimental 1.5-V 64-Mb DRAM
Nakagome, Y., Tanaka, H., Takeuchi, K., Kume, E., Watanabe, Y., Kaga, T., Kawamoto, Y., Murai, F., Izawa, R., Hisamoto, D., Kisu, T., Nishida, T., Takeda, E., Itoh, K.
Published in IEEE journal of solid-state circuits (01.04.1991)
Published in IEEE journal of solid-state circuits (01.04.1991)
Get full text
Journal Article
Concatenated Continuous Driving for Extending Lifetime of Spin Qubits Towards a Scalable Silicon Quantum Computer
Kuno, T., Utsugi, T., Lee, N., Mine, T., Yanagi, I., Muraoka, S., Mizokuchi, R., Yoneda, J., Kodera, T., Nakajima, T., Ramsay, A. J., Mertig, N., Saito, S., Hisamoto, D., Tsuchiya, R., Mizuno, H.
Published in 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (16.06.2024)
Published in 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (16.06.2024)
Get full text
Conference Proceeding
A low-resistance self-aligned T-shaped gate for high-performance sub-0.1-μm CMOS
Hisamoto, D., Umeda, K., Nakamura, Y., Kimura, S.
Published in IEEE transactions on electron devices (01.06.1997)
Published in IEEE transactions on electron devices (01.06.1997)
Get full text
Journal Article
A fully depleted lean-channel transistor (DELTA)-a novel vertical ultrathin SOI MOSFET
Hisamoto, D., Kaga, T., Kawamoto, Y., Takeda, E.
Published in IEEE electron device letters (01.01.1990)
Published in IEEE electron device letters (01.01.1990)
Get full text
Journal Article
Crown-shaped stacked-capacitor cell for 1.5-V operation 64-Mb DRAMs
Kaga, T., Kure, T., Shinriki, H., Kawamoto, Y., Murai, F., Nishida, T., Nakagome, Y., Hisamoto, D., Kisu, T., Takeda, E., Itoh, K.
Published in IEEE transactions on electron devices (01.02.1991)
Published in IEEE transactions on electron devices (01.02.1991)
Get full text
Journal Article
Electron-Trap and Hole-Trap Distributions in Metal/Oxide/Nitride/Oxide/Silicon Structures
Ishida, T., Mine, T., Hisamoto, D., Shimamoto, Y., Yamada, R.
Published in IEEE transactions on electron devices (01.02.2013)
Published in IEEE transactions on electron devices (01.02.2013)
Get full text
Journal Article
A cross section of alpha -particle-induced soft-error phenomena in VLSIs
Takeda, E., Takeuchi, K., Hisamoto, D., Toyabe, T., Ohshima, K., Itoh, K.
Published in IEEE transactions on electron devices (01.11.1989)
Published in IEEE transactions on electron devices (01.11.1989)
Get full text
Journal Article
A folded-channel MOSFET for deep-sub-tenth micron era
Hisamoto, D., Wen-Chin Lee, Kedzierski, J., Anderson, E., Takeuchi, H., Asano, K., Tsu-Jae King, Bokor, J., Chenming Hu
Published in International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) (1998)
Published in International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) (1998)
Get full text
Conference Proceeding