Low nickel germanide contact resistances by carrier activation enhancement techniques for germanium CMOS application
Miyoshi, Hidenori, Ueno, Tetsuji, Hirota, Yoshihiro, Yamanaka, Junji, Arimoto, Keisuke, Nakagawa, Kiyokazu, Kaitsuka, Takanobu
Published in Japanese Journal of Applied Physics (01.04.2014)
Published in Japanese Journal of Applied Physics (01.04.2014)
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Journal Article
In-situ contact formation for ultra-low contact resistance NiGe using carrier activation enhancement (CAE) techniques for Ge CMOS
Miyoshi, Hidenori, Ueno, Tetsuji, Akiyama, Koji, Hirota, Yoshihiro, Kaitsuka, Takanobu
Published in 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers (01.06.2014)
Published in 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers (01.06.2014)
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Conference Proceeding
Microwave plasma doping: Arsenic activation and transport in germanium and silicon
Miyoshi, Hidenori, Oka, Masahiro, Ueda, Hirokazu, Ventzek, Peter L. G., Sugimoto, Yasuhiro, Kobayashi, Yuuki, Nakamura, Genji, Hirota, Yoshihiro, Kaitsuka, Takanobu, Kawakami, Satoru
Published in Japanese Journal of Applied Physics (01.04.2016)
Published in Japanese Journal of Applied Physics (01.04.2016)
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Journal Article
Study of Charge Trap Sites in SiN Films by Hard X-ray Photoelectron Spectroscopy
Kosemura, Daisuke, Takei, Munehisa, Nagata, Kohki, Akamatsu, Hiroaki, Hattori, Maki, Katayama, Daisuke, Nishita, Tatsuo, Hirota, Yoshihiro, Machida, Masatake, Son, Jin-Young, Koganezawa, Tomoyuki, Hirosawa, Ichiro, Ogura, Atsushi
Published in Japanese Journal of Applied Physics (01.04.2010)
Published in Japanese Journal of Applied Physics (01.04.2010)
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Journal Article
Experimental Study of 1/f 1+α Noise in Transient Leakage Current of Metal–Insulator–Metal With Stacked High-k Polycrystalline Films
Lin, Hsin-Jyun, Akiyama, Koji, Hirota, Yoshihiro, Akasaka, Yasushi, Nakamura, Genji, Nagai, Hiroyuki, Morimoto, Tamotsu, Watanabe, Hiroshi
Published in IEEE transactions on electron devices (01.06.2020)
Published in IEEE transactions on electron devices (01.06.2020)
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Journal Article
Experimental Study of 1/f1+α Noise in Transient Leakage Current of Metal-Insulator-Metal With Stacked High-k Polycrystalline Films
Lin, Hsin-Jyun, Akiyama, Koji, Hirota, Yoshihiro, Akasaka, Yasushi, Nakamura, Genji, Nagai, Hiroyuki, Morimoto, Tamotsu, Watanabe, Hiroshi
Published in IEEE transactions on electron devices (01.06.2020)
Published in IEEE transactions on electron devices (01.06.2020)
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Journal Article
Identification of putative downstream genes of Oct‐3, a pluripotent cell‐specific transcription factor
Saijoh, Yukio, Fujii, Hideta, Meno, Chikara, Sato, Mayumi, Hirota, Yoshihiro, Nagamatsu, Shinya, lkeda, Masako, Hamada, Hiroshi
Published in Genes to cells : devoted to molecular & cellular mechanisms (01.02.1996)
Published in Genes to cells : devoted to molecular & cellular mechanisms (01.02.1996)
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Journal Article
Effect of Plasma Process for SiO2 Film on Sidewall
Tanimura, Tatsuhiko, Hsiao, Chihhsiang, Akiyama, Koji, Hirota, Yoshihiro, Sato, Jun, Kaitsuka, Takanobu
Published in IEEE transactions on semiconductor manufacturing (01.08.2015)
Published in IEEE transactions on semiconductor manufacturing (01.08.2015)
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Journal Article
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
NIINO REIJI, YAMAMOTO TOMONARI, HIROTA YOSHIHIRO, YANG RONG, YAMAGUCHI TATSUYA, FUJIKAWA MAKOTO
Year of Publication 23.05.2019
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Year of Publication 23.05.2019
Patent
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
NIINO REIJI, YAMAMOTO TOMONARI, HIROTA YOSHIHIRO, YANG RONG, YAMAGUCHI TATSUYA, FUJIKAWA MAKOTO
Year of Publication 02.05.2019
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Year of Publication 02.05.2019
Patent