Size Control and Photoluminescence Characteristics of InSb Quantum Dots on GaSb Substrates Grown by Molecular Beam Epitaxy
Kuwabara, Emin, Yamamoto, Kyosuke, Koseki, Keisuke, Gozu, Shin‐Ichiro, Endoh, Akira, Fujishiro, Hiroki I.
Published in Physica status solidi. A, Applications and materials science (01.07.2024)
Published in Physica status solidi. A, Applications and materials science (01.07.2024)
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Effect of Strain in Channel on Electron Transport Properties of Ga1−xInxSb High Electron Mobility Transistor Structures with Strained‐Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer
Endoh, Akira, Hatori, Koharu, Kishimoto, Naoyuki, Hiraoka, Mizuho, Kemmochi, Yuta, Endoh, Yuki, Osawa, Koki, Hayashi, Takuya, Machida, Ryuto, Watanabe, Issei, Yamashita, Yoshimi, Hara, Shinsuke, Kasamatsu, Akifumi, Fujishiro, Hiroki I
Published in Physica status solidi. A, Applications and materials science (01.04.2023)
Published in Physica status solidi. A, Applications and materials science (01.04.2023)
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Journal Article
Advantage of heteroepitaxial GaSb thin-film buffer and GaSb dot nucleation layer for GaSb/AlGaSb multiple quantum well structure grown on Si(1 0 0) substrate by molecular beam epitaxy
Machida, Ryuto, Akahane, Kouichi, Watanabe, Issei, Hara, Shinsuke, Fujikawa, Sachie, Kasamatsu, Akifumi, Fujishiro, Hiroki I.
Published in Journal of crystal growth (01.02.2019)
Published in Journal of crystal growth (01.02.2019)
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Journal Article
Effect of low-temperature-grown GaSb layer on formation of high-density and small GaSb islands on Si(100) substrate
Machida, Ryuto, Toda, Ryusuke, Fujikawa, Sachie, Hara, Shinsuke, Watanabe, Issei, Fujishiro, Hiroki I.
Published in Physica Status Solidi. B: Basic Solid State Physics (01.04.2016)
Published in Physica Status Solidi. B: Basic Solid State Physics (01.04.2016)
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Journal Article
Improved Electron Transport Properties of Ga1–xInxSb Quantum Well Channel Using Strained‐Al0.40In0.60Sb/Al1–yInySb Stepped Buffer
Hiraoka, Mizuho, Endoh, Yuki, Osawa, Koki, Kishimoto, Naoyuki, Hayashi, Takuya, Machida, Ryuto, Watanabe, Issei, Yamashita, Yoshimi, Hara, Shinsuke, Gotow, Takahiro, Kasamatsu, Akifumi, Endoh, Akira, Fujishiro, Hiroki I.
Published in Physica status solidi. A, Applications and materials science (01.02.2020)
Published in Physica status solidi. A, Applications and materials science (01.02.2020)
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Journal Article
Surface cleaning and pure nitridation of GaSb by in-situ plasma processing
Gotow, Takahiro, Fujikawa, Sachie, Fujishiro, Hiroki I., Ogura, Mutsuo, Chang, Wen Hsin, Yasuda, Tetsuji, Maeda, Tatsuro
Published in AIP advances (01.10.2017)
Published in AIP advances (01.10.2017)
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Comparisons of surgical outcomes between transperitoneal and retroperitoneal approaches in robot-assisted laparoscopic partial nephrectomy for lateral renal tumors: A propensity score-matched comparative analysis
Toshio, T., Kazuhiko, Y., Tsunenori, K., Hironori, F., Hiroki, I., Hirohito, K., Masayoshi, O., Junpei, I., Hideki, I., Kazunari, T.
Published in European urology open science (Online) (01.07.2020)
Published in European urology open science (Online) (01.07.2020)
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Journal Article
Growth process and morphology of three-dimensional GaSb islands on Ga/Si(111)
Hara, Shinsuke, Machida, Ryuto, Yoshiki, Keisuke, Irokawa, Katsumi, Miki, Hirofumi, Kawazu, Akira, Fujishiro, Hiroki I.
Published in Physica status solidi. C (01.05.2013)
Published in Physica status solidi. C (01.05.2013)
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Journal Article
Selective growth of InSb on localized area of Si(100) by molecular beam epitaxy
Hara, Shinsuke, Iida, Tomoaki, Nishino, Yuichi, Uchida, Akinori, Horii, Hiroyuki, Fujishiro, Hiroki I.
Published in Journal of crystal growth (15.05.2011)
Published in Journal of crystal growth (15.05.2011)
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Journal Article
Conference Proceeding
Comparative study on nano-scale III-V double-gate MOSFETs with various channel materials
Nishida, Akio, Hasegawa, Kei, Ohama, Ryoko, Fujikawa, Sachie, Hara, Shinsuke, Fujishiro, Hiroki I.
Published in Physica status solidi. C (01.11.2013)
Published in Physica status solidi. C (01.11.2013)
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Journal Article
Effects of HCl treatment and predeposition vacuum annealing on Al2O3/GaSb/GaAs metal-oxide-semiconductor structures
Gotow, Takahiro, Fujikawa, Sachie, Fujishiro, Hiroki I., Ogura, Mutsuo, Yasuda, Tetsuji, Maeda, Tatsuro
Published in Japanese Journal of Applied Physics (19.01.2015)
Published in Japanese Journal of Applied Physics (19.01.2015)
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Journal Article
Study of Initial Growth Layer of GaSb on Si(111) by Scanning Tunneling Microscopy
Hara, Shinsuke, Fuse, Kazuhiro, Machida, Ryuto, Yagishita, Kazuki, Irokawa, Katsumi, Miki, Hirofumi, Kawazu, Akira, Fujishiro, Hiroki I
Published in Japanese Journal of Applied Physics (01.08.2011)
Published in Japanese Journal of Applied Physics (01.08.2011)
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Journal Article
STM study of Si(113) 3 x 2-Ga surface
IROKAWA, Katsumi, NAGURA, Yuichiro, KOBAYASHI, Hidekazu, HARA, Shinsuke, FUJISHIRO, Hiroki I, MIKI, Hirofumi, KAWAZU, Akira, WATANABE, Kazuyuki
Published in Surface science (01.05.2009)
Published in Surface science (01.05.2009)
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Journal Article
Quantum-corrected Monte Carlo study of nano-scale InGaAs MOSFETs
Watanabe, Hisanao, Homma, Takahiro, Takegishi, Takayuki, Hirasawa, Yuki, Hirata, Yuko, Hara, Shinsuke, Fujishiro, Hiroki I.
Published in Physica status solidi. C (01.02.2011)
Published in Physica status solidi. C (01.02.2011)
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Journal Article
Study of Ga Adsorption Structure on Ni/Si(100) Surface by Scanning Tunneling Microscopy
Hara, Shinsuke, Fuse, Kazuhiro, Suzuki, Toru, Yagishita, Kazuki, Hirata, Yoshiki, Irokawa, Katsumi, Miki, Hirofumi, Kawazu, Akira, Fujishiro, Hiroki I
Published in Japanese Journal of Applied Physics (01.08.2010)
Published in Japanese Journal of Applied Physics (01.08.2010)
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