Sheet resistance underneath the Au ohmic-electrode on hydrogen-terminated surface-conductive diamond (001)
Kono, S., Sasaki, T., Inaba, M., Hiraiwa, A., Kawarada, H.
Published in Diamond and related materials (01.11.2017)
Published in Diamond and related materials (01.11.2017)
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Diamond MOSFETs using 2D hole gas with 1700V breakdown voltage
Kawarada, H., Yamada, T., Xu, D., Kitabayashi, Y., Shibata, M., Matsumura, D., Kobayashi, M., Saito, T., Kudo, T., Inaba, M., Hiraiwa, A.
Published in 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.06.2016)
Published in 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.06.2016)
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Conference Proceeding
Journal Article
Ultrashallow junction formation by self-limiting LTP and its application to sub-65-nm node MOSFETs
Shima, A., Ashihara, H., Hiraiwa, A., Mine, T., Goto, Y.
Published in IEEE transactions on electron devices (01.06.2005)
Published in IEEE transactions on electron devices (01.06.2005)
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Journal Article
Enhancement of Drain Current in Planar MOSFETs by Dopant Profile Engineering Using Nonmelt Laser Spike Annealing
Shima, A., Mine, T., Torii, K., Hiraiwa, A.
Published in IEEE transactions on electron devices (01.11.2007)
Published in IEEE transactions on electron devices (01.11.2007)
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Thickness-dependent power-law of dielectric breakdown in ultrathin NMOS gate oxides
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Conference Proceeding
A mechanism and a reduction technique for large reverse leakage current in p-n junctions
Ohyu, K., Ohkura, M., Hiraiwa, A., Watanabe, K.
Published in IEEE transactions on electron devices (01.08.1995)
Published in IEEE transactions on electron devices (01.08.1995)
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Journal Article
Voltage-driven distribution of gate oxide breakdown
Hiraiwa, A., Sakai, S., Ishikawa, D.
Published in 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual (2003)
Published in 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual (2003)
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Conference Proceeding
Structural Requirements for Recognition of the HLA-Dw14 Class II Epitope: A Key HLA Determinant Associated with Rheumatoid Arthritis
Hiraiwa, Akikazu, Yamanaka, Katsuo, Kwok, William W., Mickelson, Eric M., Masewicz, Susan, Hansen, John A., Radka, Susan F., Nepom, Gerald T.
Published in Proceedings of the National Academy of Sciences - PNAS (01.10.1990)
Published in Proceedings of the National Academy of Sciences - PNAS (01.10.1990)
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Phosphosilicate Glass Passivation for ULSI Cu Metallization
Miyazaki, H., Kojima, H., Hiraiwa, A., Homma, Y., Murakami, K.
Published in Journal of the Electrochemical Society (01.11.1992)
Published in Journal of the Electrochemical Society (01.11.1992)
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Journal Article
Binding of High-Risk Human Papillomavirus E6 Oncoproteins to the Human Homologue of the Drosophila Discs Large Tumor Suppressor Protein
Kiyono, Tohru, Hiraiwa, Atsuro, Fujita, Masatoshi, Hayashi, Yasuyuki, Akiyama, Tetsu, Ishibashi, Masahide
Published in Proceedings of the National Academy of Sciences - PNAS (14.10.1997)
Published in Proceedings of the National Academy of Sciences - PNAS (14.10.1997)
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Complete response in a case of advanced gastric cancer with liver and intra-abdominal lymph node metastases treated by combined chemotherapy of TS-1 and CDDP
Iwase, H, Kaida, S, Nakamura, M, Mizuno, T, Iyo, T, Nakarai, K, Indo, T, Hiraiwa, A
Published in Gan to kagaku ryoho (01.10.2001)
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Published in Gan to kagaku ryoho (01.10.2001)
Journal Article
0.1- mu m gate-length superconducting FET
Nishino, T., Hatano, M., Hasegawa, H., Murai, F., Kure, T., Hiraiwa, A., Yagi, K., Kawabe, U.
Published in IEEE electron device letters (01.02.1989)
Published in IEEE electron device letters (01.02.1989)
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Journal Article
Oxidized Silicon Terminated Diamond p-MOSFETs with Channel Mobility >150 cm2V-1s-1 and |VTH|> 3V Normally-off for Complementary Power Circuits
Kawarada, H., Ota, K., Fu, Y., Narita, A., Zhu, X., Hiraiwa, A., Fujishima, T.
Published in 2023 International Electron Devices Meeting (IEDM) (09.12.2023)
Published in 2023 International Electron Devices Meeting (IEDM) (09.12.2023)
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