by Hill, RJW, Moran, DAJ, Li, Xu, Zhou, Haiping, Macintyre, D, Thoms, S, Asenov, A, Zurcher, P, Rajagopalan, K, Abrokwah, J, Droopad, R, Passlack, M, Thayne, I G
Published in IEEE electron device letters (01.01.2007)

by Kalna, K, Wilson, JA, Moran, DAJ, Hill, RJW, Long, A R, Droopad, R, Passlack, M, Thayne, I G, Asenov, A
Published in IEEE transactions on nanotechnology (01.01.2007)

by Kim, T-W, Kim, D-H, Koh, D H, Kwon, H M, Baek, R H, Veksler, D, Huffman, C, Matthews, K, Oktyabrsky, S, Greene, A, Ohsawa, Y, Ko, A, Nakajima, H, Takahashi, M, Nishizuka, T, Ohtake, H, Banerjee, S K, Shin, SH, Ko, D-H, Kang, C, Gilmer, D, Hill, RJW, Maszara, W, Hobbs, C, Kirsch, P D
Published in Technical digest - International Electron Devices Meeting (01.12.2013)

by Lee, Rinus T. P., Hill, R. J. W., Loh, W.-Y, Baek, R.-H, Deora, S., Matthews, K., Huffman, C., Majumdar, K., Michalak, T., Borst, C., Hung, P. Y., Chen, C.-H, Yum, J.-H, Kim, T.-W, Kang, C. Y., Wei-E Wang, Kim, D.-H, Hobbs, C., Kirsch, P. D.
Published in 2013 IEEE International Electron Devices Meeting (01.12.2013)