Gate Injection Transistor (GIT)-A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation
Uemoto, Y., Hikita, M., Ueno, H., Matsuo, H., Ishida, H., Yanagihara, M., Ueda, T., Tanaka, T., Ueda, D.
Published in IEEE transactions on electron devices (01.12.2007)
Published in IEEE transactions on electron devices (01.12.2007)
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Journal Article
Current-collapse-free operations up to 850 V by GaN-GIT utilizing hole injection from drain
Kaneko, Saichiro, Kuroda, Masayuki, Yanagihara, Manabu, Ikoshi, Ayanori, Okita, Hideyuki, Morita, Tatsuo, Tanaka, Kenichiro, Hikita, Masahiro, Uemoto, Yasuhiro, Takahashi, Satoru, Ueda, Tetsuzo
Published in 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.05.2015)
Published in 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.05.2015)
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Conference Proceeding
Through Recess and Regrowth Gate Technology for Realizing Process Stability of GaN-Based Gate Injection Transistors
Okita, Hideyuki, Hikita, Masahiro, Nishio, Akihiko, Sato, Takahiro, Matsunaga, Keiichi, Matsuo, Hisayoshi, Tsuda, Michinobu, Mannoh, Masaya, Kaneko, Saichiro, Kuroda, Masayuki, Yanagihara, Manabu, Ikoshi, Ayanori, Morita, Tatsuo, Tanaka, Kenichiro, Uemoto, Yasuhiro
Published in IEEE transactions on electron devices (01.03.2017)
Published in IEEE transactions on electron devices (01.03.2017)
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Journal Article
Influence of Donor-Type Hole Traps Under P-GaN Gate in GaN-Based Gate Injection Transistor (GIT)
Tanaka, Kenichiro, Hikita, Masahiro, Ueda, Tetsuzo
Published in 2019 IEEE International Reliability Physics Symposium (IRPS) (01.03.2019)
Published in 2019 IEEE International Reliability Physics Symposium (IRPS) (01.03.2019)
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Conference Proceeding