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Terahertz spectroscopy of plasma waves in high electron mobility transistors
Nouvel, P., Marinchio, H., Torres, J., Palermo, C., Gasquet, D., Chusseau, L., Varani, L., Shiktorov, P., Starikov, E., Gružinskis, V
Published in Journal of applied physics (01.07.2009)
Published in Journal of applied physics (01.07.2009)
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Degradation of AlGaN/GaN high-electron mobility transistors in the current-controlled off-state breakdown
Kuzmik, J., Jurkovič, M., Gregušová, D., Ťapajna, M., Brunner, F., Cho, M., Meneghesso, G., Würfl, J.
Published in Journal of applied physics (28.04.2014)
Published in Journal of applied physics (28.04.2014)
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Wireless Detection System for Glucose and pH Sensing in Exhaled Breath Condensate Using AlGaN/GaN High Electron Mobility Transistors
Byung Hwan Chu, Kang, B.S., Chang, C.Y., Ren, F., Goh, A., Sciullo, A., Wu, W., Lin, J., Gila, B.P., Pearton, S.J., Johnson, J.W., Piner, E.L., Linthicum, K.J.
Published in IEEE sensors journal (01.01.2010)
Published in IEEE sensors journal (01.01.2010)
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Hot-Electron Effects in AlGaN/GaN HEMTs Under Semi-ON DC Stress
Minetto, Andrea, Deutschmann, Bernd, Modolo, Nicola, Nardo, Arianna, Meneghini, Matteo, Zanoni, Enrico, Sayadi, Luca, Prechtl, Gerhard, Sicre, Sebastien, Haberlen, Oliver
Published in IEEE transactions on electron devices (01.11.2020)
Published in IEEE transactions on electron devices (01.11.2020)
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The Radiation Hardness of Quantum Dot Embedded in High Electron Mobility Transistor Force-Sensitive Structure
Wang, Ruirong, Guo, Hao, Tang, Jun, Liu, Jinping, Liu, Jun, Liu, Lishuang
Published in IEEE sensors journal (15.10.2021)
Published in IEEE sensors journal (15.10.2021)
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GaN HEMT Oscillators with Buffers
Jang, Sheng-Lyang, Huang, Ching-Yen, Yang, Tzu Chin, Lu, Chien-Tang
Published in Micromachines (Basel) (28.07.2025)
Published in Micromachines (Basel) (28.07.2025)
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Fast Overcurrent Protection for Direct Drive Cascode GaN HEMT Semiconductors Based on Industrial Gate Drivers
Vico, Enrico, Stella, Fausto, Giuffrida, Simone, Bojoi, Radu
Published in Conference proceedings - IEEE Applied Power Electronics Conference and Exposition (25.02.2024)
Published in Conference proceedings - IEEE Applied Power Electronics Conference and Exposition (25.02.2024)
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Extended Exposure of Gallium Nitride Heterostructure Devices to a Simulated Venus Environment
Eisner, Savannah R., Alpert, Hannah S., Chapin, Caitlin A., Yalamarthy, Ananth Saran, Satterthwaite, Peter F., Nasiri, Ardalan, Port, Sara, Ang, Simon, Senesky, Debbie G.
Published in 2021 IEEE Aerospace Conference (50100) (06.03.2021)
Published in 2021 IEEE Aerospace Conference (50100) (06.03.2021)
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Quantum well engineering of InAlAs/InGaAs HEMTs for low impact ionization applications
Gomes, Umesh P., Chen, Yiqiao, Kabi, Sanjib, Chow, Peter, Biswas, Dhrubes
Published in Current applied physics (01.05.2013)
Published in Current applied physics (01.05.2013)
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In0.52Al0.48As/InxGa1-xAs (0.53<x<1.0) pseudomorphic high electron mobility transistors with high breakdown voltages : design and performances
DICKMANN, J, RIEPE, K, GEYER, A, MAILE, B. E, SCHURR, A, BERG, M, DAEMBKES, H
Published in Japanese journal of applied physics (1996)
Published in Japanese journal of applied physics (1996)
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Interplay of Surface Passivation and Electric Field in Determining ESD Behaviour of p-GaN Gated AlGaN/GaN HEMTs
Malik, Rasik Rashid, Shaji, Avinas N, Jayshree, Khan, Zubear, Bhattacharya, Madhura, Munshi, Mohammad Ateeb, Chaudhuri, Rajarshi R., Joshi, Vipin, Shrivastava, Mayank
Published in 2023 45th Annual EOS/ESD Symposium (EOS/ESD) (02.10.2023)
Published in 2023 45th Annual EOS/ESD Symposium (EOS/ESD) (02.10.2023)
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In 0.52 Al 0.48 As/In x Ga 1-x As (0.53<x<1.0) Pseudomorphic High Electron Mobility Transistors with High Breakdown Voltages: Design and Performances
Dickmann, Jürgen, Riepe, Klaus, Geyer, Arthur, Maile, Bernd E., Schurr, Anton, Daembkes, Michael Berg
Published in Japanese Journal of Applied Physics (01.01.1996)
Published in Japanese Journal of Applied Physics (01.01.1996)
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Investigation of the practical output load impedance sensitivity of a 10 W GaN device subject to gate bias variation
Gecan, Dragan, Olavsbraten, Morten, Gjertsen, Karl M.
Published in 2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR) (01.01.2016)
Published in 2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR) (01.01.2016)
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Power gain at THz frequencies employing grating-gate RTD-gated HEMTs
Condori, Hugo, Sensale-Rodriguez, Berardi
Published in 2015 USNC-URSI Radio Science Meeting (Joint with AP-S Symposium) (01.07.2015)
Published in 2015 USNC-URSI Radio Science Meeting (Joint with AP-S Symposium) (01.07.2015)
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Snapback and Postsnapback Saturation of Pseudomorphic High-Electron Mobility Transistor Subject to Transient Overstress
Qiang Cui, Parthasarathy, Srivatsan, Salcedo, Javier A, Liou, Juin J, Hajjar, Jean J, Yuanzhong Zhou
Published in IEEE electron device letters (01.05.2010)
Published in IEEE electron device letters (01.05.2010)
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