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Effect of high voltage stress on the DC performance of the Al2O3/AlN GaN metal-insulator-semiconductor high-electron mobility transistor for power applications
Hsieh, Ting-En, Lin, Yueh-Chin, Liao, Jen-Ting, Lan, Wei-Cheng, Chin, Ping-Chieh, Chang, Edward Yi
Published in Applied physics express (01.10.2015)
Published in Applied physics express (01.10.2015)
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Gallium nitride high electron mobility transistor with an effective graphene-based heat removal system
Volcheck, V. S., Lovshenko, I. Yu, Shandarovich, V. T., Ha, Dao Dinh
Published in Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki (16.05.2020)
Published in Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki (16.05.2020)
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Double-Phase Adaptive Neural Network for Condition-based Monitoring of p-GaN HEMT under Repetitive Short Circuit Stresses
Mei, Wenjuan, Liu, Zhen, Pan, Chaowu, Li, Ouhang, Su, Yuanzhang, Zhou, Qi
Published in IEEE transactions on instrumentation and measurement (01.01.2023)
Published in IEEE transactions on instrumentation and measurement (01.01.2023)
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Transport characteristics of AlGaN/GaN structures for amplification of terahertz radiations
Kaur, Harpreet, Sharma, Rajesh, Laurent, T., Torres, J., Nouvel, P., Palermo, C., Varani, L., Cordier, Y., Chmielowska, M., Faurie, J.-P., Beaumont, B.
Published in Applied physics. A, Materials science & processing (01.02.2022)
Published in Applied physics. A, Materials science & processing (01.02.2022)
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Feature Papers in Electronic Materials Section (Volume 2)—15th Anniversary of Materials
Year of Publication 2024
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eBook
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HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) WITH RESURF JUNCTION
SONI, Ankit, RAGHAVAN, Srinivasan, BHAT, Navakant, SOMAN, Rohith, SHRIVASTAVA, Mayank
Year of Publication 10.01.2019
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Year of Publication 10.01.2019
Patent
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Piezoelectric Aluminium Scandium Nitride (AlScN) Thin Films: Material Development and Applications in Microdevices
Year of Publication 2023
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eBook
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Study on terahertz radiation generated by two dimensional electron gas plasma oscillation
Zijian, Q., Shengpeng, Y., Shaomeng, W., Ping, Z., Yubin, G.
Published in IEEE conference record-abstracts - IEEE International Conference on Plasma Science (16.06.2024)
Published in IEEE conference record-abstracts - IEEE International Conference on Plasma Science (16.06.2024)
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Conference Proceeding
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The mitigating effects of the threshold voltage shifting on the false turn-on of GaN E-HEMTs
Xu, Guangzhao, Yang, Xu, Xie, Ruiliang, Zhang, Feng, Wang, Naizeng, Tian, Mofan, Jia, Haiyang, Wang, Laili
Published in Conference proceedings - IEEE Applied Power Electronics Conference and Exposition (01.03.2018)
Published in Conference proceedings - IEEE Applied Power Electronics Conference and Exposition (01.03.2018)
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Conference Proceeding
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