Computational chemistry predictions of kinetics and major reaction pathways for germane gas-phase reactions
SIMKA, H, HIERLEMANN, M, UTZ, M, JENSEN, K. F
Published in Journal of the Electrochemical Society (01.08.1996)
Published in Journal of the Electrochemical Society (01.08.1996)
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Journal Article
Misfortune, challenge, and success: defects in processed semiconductor devices
Cerva, H., Engelhardt, M., Hierlemann, M., Pölzl, M., Thenikl, T.
Published in Physica. B, Condensed matter (01.12.2001)
Published in Physica. B, Condensed matter (01.12.2001)
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Journal Article
High Performance Transistors Featured in an Aggressively Scaled 45nm Bulk CMOS Technology
Luo, Z., Rovedo, N., Ong, S., Phoong, B., Eller, M., Utomo, H., Ryou, C., Wang, H., Stierstorfer, R., Clevenger, L., Kim, S., Toomey, J., Sciacca, D., Li, J., Wille, W., Zhao, L., Teo, L., Dyer, T., Fang, S., Yan, J., Kwon, O., Park, D., Holt, J., Han, J., Chan, V., Yuan, J., Kebede, T., Lee, H., Kim, S., Lee, S., Vayshenker, A., Yang, Z., Tian, C., Ng, H., Shang, H., Hierlemann, M., Ku, J., Sudijono, J., Ieong, M.
Published in 2007 IEEE Symposium on VLSI Technology (01.06.2007)
Published in 2007 IEEE Symposium on VLSI Technology (01.06.2007)
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Conference Proceeding
Stress Proximity Technique for Performance Improvement with Dual Stress Liner at 45nm Technology and Beyond
Davis, C., Ku, J.H., Schiml, T., Sudijono, J., Yang, I., Steegen, A., Coolbough, D., Hierlemann, M., Ng, H., Amos, R., Sherony, M., Belyansky, M., Widodo, J., Tjoa, T., Edleman, N., Kwon, O., Panda, S., Yuan, J., Nguyen, P., Nivo, N., Luo, Z., Chidambarrao, D., Stierstorfer, R., Kim, J., Park, J., Ajmera, A., Baiocco, C., Ko, Y., Tan, S.S., Teh, Y.W., Dyer, T., Gao, W., Fang, S., Chen, X., Davis, C., Ku, J.H., Schiml, T., Sudijono, J., Yang, I., Steegen, A., Coolbough, D., Hierlemann, M., Ng, H., Amos, R., Sherony, M., Belyansky, M., Widodo, J., Tjoa, T., Edleman, N., Kwon, O., Panda, S., Yuan, J., Nguyen, P., Nivo, N., Luo, Z., Chidambarrao, D., Stierstorfer, R., Kim, J., Park, J., Ajmera, A., Baiocco, C., Ko, Y., Tan, S.S., Teh, Y.W., Dyer, T., Gao, W., Fang, S., Chen, X.
Published in 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers (2006)
Published in 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers (2006)
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Conference Proceeding
A gas-phase and surface kinetics model for silicon epitaxial growth with SiH[sub 2]Cl[sub 2] in an RTCVD reactor. [Rapid Thermal Chemical Vapor Deposition]
Hierlemann, M., Kersch, A., Werner, C., Schaefer, H.
Published in Journal of the Electrochemical Society (01.01.1995)
Published in Journal of the Electrochemical Society (01.01.1995)
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Journal Article
A 45nm Low Cost Low Power Platform by Using Integrated Dual-Stress-Liner Technology
Yuan, J., Tan, S., Lee, Y., Kim, J., Lindsay, R., Sardesai, V., Hook, T., Amos, R., Luo, Z., Lee, W., Fang, S., Dyer, T., Rovedo, N., Stierstorfer, R., Yang, Z., Li, J., Barton, K., Ng, H., Sudijono, J., Ku, J., Hierlemann, M., Schiml, T.
Published in 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers (2006)
Published in 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers (2006)
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Conference Proceeding
Misfortune, challenge, and success: defects in processed semiconductor devices
CERVA, H, ENGELHARDT, M, HIERLEMANN, M, PÖLZL, M, THENIKL, T
Published in Physica. B, Condensed matter (2001)
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Published in Physica. B, Condensed matter (2001)
Conference Proceeding
A reduced-fluid dynamic discharge model for applications in technology-oriented computer-aided design
BRINKMANN, R. P, FÜRST, R, WERNER, C, HIERLEMANN, M
Published in Journal of the Electrochemical Society (01.06.1996)
Published in Journal of the Electrochemical Society (01.06.1996)
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Journal Article
Two-dimensional modeling of the growth of GaAs from (C2H5)2 GaCl and AsH3
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Conference Proceeding
Novel Enhanced Stressor with Graded Embedded SiGe Source/Drain for High Performance CMOS Devices
Ieong, M., Sudijono, J., Ku, J.H., Shum, D., Hierlemann, M., Amos, R., Chiulli, G., Lindsay, R., Kim, S.D., Loesing, R., Burns, L., Turansky, A., Madan, A., St Lawrence, B., Davis, R., Murphy, R., Li, J., Li, J., Kim, J.J., Zhuang, H., Mishra, S., Schepis, D., Gutmann, A., Kempisty, J., Adam, T.N., Holt, J., Ng, H., Fang, S., Chong, Y.F., Stierstorfer, R., Krishnasamy, R., Luo, Z., Rovedo, N., Teo, L.W., Utomo, H., Han, J.P., Ieong, M.
Published in 2006 International Electron Devices Meeting (01.12.2006)
Published in 2006 International Electron Devices Meeting (01.12.2006)
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