Performance Enhancement in Multi Gate Tunneling Field Effect Transistors by Scaling the Fin-Width
Leonelli, Daniele, Vandooren, Anne, Rooyackers, Rita, Verhulst, Anne S, Gendt, Stefan De, Heyns, Marc M, Groeseneken, Guido
Published in Japanese Journal of Applied Physics (01.04.2010)
Published in Japanese Journal of Applied Physics (01.04.2010)
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Journal Article
Silicide Engineering to Boost Si Tunnel Transistor Drive Current
Leonelli, Daniele, Vandooren, Anne, Rooyackers, Rita, Verhulst, Anne S, Gendt, Stefan De, Heyns, Marc M, Groeseneken, Guido
Published in Japanese Journal of Applied Physics (01.04.2011)
Published in Japanese Journal of Applied Physics (01.04.2011)
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Journal Article
Bandgap opening in oxygen plasma-treated graphene
Nourbakhsh, Amirhasan, Cantoro, Mirco, Vosch, Tom, Pourtois, Geoffrey, Clemente, Francesca, van der Veen, Marleen H, Hofkens, Johan, Heyns, Marc M, De Gendt, Stefan, Sels, Bert F
Published in Nanotechnology (29.10.2010)
Published in Nanotechnology (29.10.2010)
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Journal Article
Fabrication and Analysis of a / Heterojunction Line Tunnel FET
Walke, Amey M., Vandooren, Anne, Rooyackers, Rita, Leonelli, Daniele, Hikavyy, Andriy, Loo, Roger, Verhulst, Anne S., Kuo-Hsing Kao, Huyghebaert, Cedric, Groeseneken, Guido, Rao, Valipe Ramgopal, Bhuwalka, Krishna K., Heyns, Marc M., Collaert, Nadine, Thean, Aaron Voon-Yew
Published in IEEE transactions on electron devices (01.03.2014)
Published in IEEE transactions on electron devices (01.03.2014)
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Journal Article
Calibration of Bulk Trap-Assisted Tunneling and Shockley-Read-Hall Currents and Impact on InGaAs Tunnel-FETs
Smets, Quentin, Verhulst, Anne S., Simoen, Eddy, Gundlach, David, Richter, Curt, Collaert, Nadine, Heyns, Marc M.
Published in IEEE transactions on electron devices (01.09.2017)
Published in IEEE transactions on electron devices (01.09.2017)
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Journal Article
On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates
Martens, K., Chi On Chui, Brammertz, G., De Jaeger, B., Kuzum, D., Meuris, M., Heyns, M., Krishnamohan, T., Saraswat, K., Maes, H.E., Groeseneken, G.
Published in IEEE transactions on electron devices (01.02.2008)
Published in IEEE transactions on electron devices (01.02.2008)
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Journal Article
The Role of Nonidealities in the Scaling of MoS2 FETs
Verreck, Devin, Arutchelvan, Goutham, Lockhart De La Rosa, Cesar J., Leonhardt, Alessandra, Chiappe, Daniele, Lu, Anh Khoa Augustin, Pourtois, Geoffrey, Matagne, Philippe, Heyns, Marc M., De Gendt, Stefan, Mocuta, Anda, Radu, Iuliana P.
Published in IEEE transactions on electron devices (01.10.2018)
Published in IEEE transactions on electron devices (01.10.2018)
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Journal Article
Calibration of the Effective Tunneling Bandgap in GaAsSb/InGaAs for Improved TFET Performance Prediction
Smets, Quentin, Verhulst, Anne S., El Kazzi, Salim, Gundlach, David, Richter, Curt A., Mocuta, Anda, Collaert, Nadine, Thean, Aaron Voon-Yew, Heyns, Marc M.
Published in IEEE transactions on electron devices (01.11.2016)
Published in IEEE transactions on electron devices (01.11.2016)
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Journal Article
Complementary Silicon-Based Heterostructure Tunnel-FETs With High Tunnel Rates
Verhulst, A.S., Vandenberghe, W.G., Maex, K., De Gendt, S., Heyns, M.M., Groeseneken, G.
Published in IEEE electron device letters (01.12.2008)
Published in IEEE electron device letters (01.12.2008)
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Journal Article
Single Layer vs Bilayer Graphene: A Comparative Study of the Effects of Oxygen Plasma Treatment on Their Electronic and Optical Properties
Nourbakhsh, Amirhasan, Cantoro, Mirco, Klekachev, Alexander V, Pourtois, Geoffrey, Vosch, Tom, Hofkens, Johan, van der Veen, Marleen H, Heyns, Marc M, De Gendt, Stefan, Sels, Bert F
Published in Journal of physical chemistry. C (25.08.2011)
Published in Journal of physical chemistry. C (25.08.2011)
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Journal Article
Part II: Investigation of Subthreshold Swing in Line Tunnel FETs Using Bias Stress Measurements
Walke, Amey M., Vandooren, Anne, Kaczer, Ben, Verhulst, Anne S., Rooyackers, Rita, Simoen, Eddy, Heyns, Marc M., Rao, V. Ramgopal, Groeseneken, Guido, Collaert, Nadine, Thean, Aaron Voon-Yew
Published in IEEE transactions on electron devices (01.12.2013)
Published in IEEE transactions on electron devices (01.12.2013)
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Journal Article
Device and Circuit Level Gate Configuration Optimization for 2D Material Field-Effect Transistors
Verreck, Devin, Arutchelvan, Goutham, Heyns, Marc M., Radu, Iuliana P.
Published in 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01.09.2019)
Published in 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01.09.2019)
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Conference Proceeding
High-Performance Deep Submicron Ge pMOSFETs With Halo Implants
Nicholas, G., De Jaeger, B., Brunco, D.P., Zimmerman, P., Eneman, G., Martens, K., Meuris, M., Heyns, M.M.
Published in IEEE transactions on electron devices (01.09.2007)
Published in IEEE transactions on electron devices (01.09.2007)
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Journal Article
Impact of Donor Concentration, Electric Field, and Temperature Effects on the Leakage Current in Germanium p +/n Junctions
Eneman, G., Wiot, M., Brugere, A., Casain, O.S.I., Sonde, S., Brunco, D.P., De Jaeger, B., Satta, A., Hellings, G., De Meyer, K., Claeys, C., Meuris, M., Heyns, M.M., Simoen, E.
Published in IEEE transactions on electron devices (01.09.2008)
Published in IEEE transactions on electron devices (01.09.2008)
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Journal Article
Electrical characterization of CNT contacts with Cu Damascene top contact
van der Veen, Marleen H., Vereecke, Bart, Huyghebaert, Cedric, Cott, Daire J., Sugiura, Masahito, Kashiwagi, Yusaku, Teugels, Lieve, Caluwaerts, Rudy, Chiodarelli, Nicolò, Vereecken, Philippe M., Beyer, Gerald P., Heyns, Marc M., De Gendt, Stefan, Tökei, Zsolt
Published in Microelectronic engineering (01.06.2013)
Published in Microelectronic engineering (01.06.2013)
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Journal Article
Conference Proceeding
High Performance 70-nm Germanium pMOSFETs With Boron LDD Implants
Hellings, G., Mitard, J., Eneman, G., De Jaeger, B., Brunco, D.P., Shamiryan, D., Vandeweyer, T., Meuris, M., Heyns, M.M., De Meyer, K.
Published in IEEE electron device letters (01.01.2009)
Published in IEEE electron device letters (01.01.2009)
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Journal Article
Scaling to Sub-1 nm Equivalent Oxide Thickness with Hafnium Oxide Deposited by Atomic Layer Deposition
Delabie, Annelies, Caymax, Matty, Brijs, Bert, Brunco, David P., Conard, Thierry, Sleeckx, Erik, Van Elshocht, Sven, Ragnarsson, Lars-Åke, De Gendt, Stefan, Heyns, Marc M.
Published in Journal of the Electrochemical Society (01.01.2006)
Published in Journal of the Electrochemical Society (01.01.2006)
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Journal Article
Quantification of Drain Extension Leakage in a Scaled Bulk Germanium PMOS Technology
Eneman, G., De Jaeger, B., Simoen, E., Brunco, D.P., Hellings, G., Mitard, J., De Meyer, K., Meuris, M., Heyns, M.M.
Published in IEEE transactions on electron devices (01.12.2009)
Published in IEEE transactions on electron devices (01.12.2009)
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Journal Article
Morphology Change of Artificial Crystal Originated Particles, and the Effect on Gate Oxide Integrity
Twan Bearda, Twan Bearda, Paul W. Mertens, Paul W. Mertens, Marc M. Heyns, Marc M. Heyns, Rüdiger Schmolke, Rüdiger Schmolke
Published in Japanese Journal of Applied Physics (01.01.2000)
Published in Japanese Journal of Applied Physics (01.01.2000)
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Journal Article
Dominant Layer for Stress-Induced Positive Charges in Hf-Based Gate Stacks
Zhang, J.F., Mo Huai Chang, Zhigang Ji, Lin Lin, Ferain, I., Groeseneken, G., Pantisano, L., De Gendt, S., Heyns, M.M.
Published in IEEE electron device letters (01.12.2008)
Published in IEEE electron device letters (01.12.2008)
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Journal Article