American Exceptionalism? Similarities and Differences in National Attitudes Toward Energy Policy and Global Warming
Reiner, D. M, Curry, T. E, de Figueiredo, M. A, Herzog, H. J, Ansolabehere, S. D, Itaoka, K, Johnsson, F, Odenberger, M
Published in Environmental science & technology (01.04.2006)
Published in Environmental science & technology (01.04.2006)
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Journal Article
Relaxed SiGe buffers with thicknesses below 0.1 μm
BAUER, M, LYUTOVICH, K, OEHME, M, KASPER, E, HERZOG, H.-J, ERNST, F
Published in Thin solid films (03.07.2000)
Published in Thin solid films (03.07.2000)
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The LITFASS project of DWD and the LITFASS-98 experiment: The project strategy and the experimental setup
Beyrich, F., Herzog, H.-J., Neisser, J.
Published in Theoretical and applied climatology (01.01.2002)
Published in Theoretical and applied climatology (01.01.2002)
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Journal Article
Effect of helium ion implantation and annealing on the relaxation behavior of pseudomorphic Si1−xGex buffer layers on Si (100) substrates
Luysberg, M., Kirch, D., Trinkaus, H., Holländer, B., Lenk, St, Mantl, S., Herzog, H.-J., Hackbarth, T., Fichtner, P. F. P.
Published in Journal of applied physics (15.10.2002)
Published in Journal of applied physics (15.10.2002)
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Journal Article
Si/SiGe n-MODFETs on thin SiGe virtual substrates prepared by means of He implantation
Herzog, H.-J., Hackbarth, T., Seiler, U., Konig, U., Luysberg, M., Hollander, B., Mantl, S.
Published in IEEE electron device letters (01.08.2002)
Published in IEEE electron device letters (01.08.2002)
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Journal Article
Modelling and measurements of the parasitic electrostatic capacitances in Si/SiGe n-HFET
Zerounian, N., Enciso-Aguilar, M., Hackbarth, T., Herzog, H.-J., Aniel, F.
Published in Solid-state electronics (01.03.2007)
Published in Solid-state electronics (01.03.2007)
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Journal Article
Microwave noise performance and modeling of SiGe-based HFETs
Aguilar, M.E., Crozat, P., Hackbarth, T., Herzog, H.-J., Aniel, F.
Published in IEEE transactions on electron devices (01.11.2005)
Published in IEEE transactions on electron devices (01.11.2005)
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Journal Article
High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer
Schaffler, F, Tobben, D, Herzog, H -J, Abstreiter, G, Hollander, B
Published in Semiconductor science and technology (01.02.1992)
Published in Semiconductor science and technology (01.02.1992)
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Journal Article
Carrier mobilities in modulation doped Si1-xGex heterostructures with respect to FET applications
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SiGe-based FETs: buffer issues and device results
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Conference Proceeding
Microwave performances of silicon heterostructure-FETs
Aniel, F., Enciso, M., Richard, S., Giguerre, L., Zerounian, N., Crozat, P., Adde, R., Hackbarth, T., Herzog, J-H., König, U.
Published in Applied surface science (15.03.2004)
Published in Applied surface science (15.03.2004)
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Conference Proceeding
Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices
Isella, G., Chrastina, D., Rössner, B., Hackbarth, T., Herzog, H.-J., König, U., von Känel, H.
Published in Solid-state electronics (01.08.2004)
Published in Solid-state electronics (01.08.2004)
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Journal Article
Strain relaxation of pseudomorphic Si1−xGex∕Si(100) heterostructures after Si+ ion implantation
Holländer, B., Buca, D., Mörschbächer, M., Lenk, St, Mantl, S., Herzog, H.-J., Hackbarth, Th, Loo, R., Caymax, M., Fichtner, P. F. P.
Published in Journal of applied physics (01.08.2004)
Published in Journal of applied physics (01.08.2004)
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Journal Article
Alternatives to thick MBE-grown relaxed SiGe buffers
HACKBARTH, T, HERZOG, H.-J, ZEUNER, M, HÖCK, G, FITZGERALD, E. A, BULSARA, M, ROSENBLAD, C, VON KÄNEL, H
Published in Thin solid films (03.07.2000)
Published in Thin solid films (03.07.2000)
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Conference Proceeding
Journal Article
Thin SiGe buffers with high Ge content for n-MOSFETs
Lyutovich, K, Bauer, M, Kasper, E, Herzog, H.-J, Perova, T, Maurice, R, Hofer, C, Teichert, C
Published in Materials science & engineering. B, Solid-state materials for advanced technology (14.02.2002)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (14.02.2002)
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Conference Proceeding
SiGe/Si hetero-field-effect-transistor with PN-junction gate
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Conference Proceeding
Integration of waveguides and photodetectors in SiGe for 1.3 μm operation
Splett, A., Zinke, T., Petermann, K., Kasper, E., Kibbel, H., Herzog, H.-J., Presting, H.
Published in IEEE photonics technology letters (01.01.1994)
Published in IEEE photonics technology letters (01.01.1994)
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