Search Results - "Hendricks, Nolan" :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

Lateral β-Ga2O3 field effect transistors

Lateral β-Ga2O3 field effect transistors

by Chabak, Kelson D, Leedy, Kevin D, Green, Andrew J, Mou, Shin, Neal, Adam T, Asel, Thaddeus, Heller, Eric R, Hendricks, Nolan S, Liddy, Kyle, Crespo, Antonio, Miller, Nicholas C, Lindquist, Miles T, Moser, Neil A, Fitch, Robert C, Walker, Dennis E, Dorsey, Donald L, Jessen, Gregg H
Published in Semiconductor science and technology (2020)

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Journal Article

Theoretical Power Figure-of-Merit in β -Ga2O3 Lateral Power Transistors Determined Using Physics-Based TCAD Simulation

Theoretical Power Figure-of-Merit in β -Ga2O3 Lateral Power Transistors Determined Using Physics-Based TCAD Simulation

by Ahmed, Shaikh S., Islam, Ahmad E., Dryden, Daniel M., Liddy, Kyle J., Hendricks, Nolan S., Moser, Neil A., Chabak, Kelson D., Green, Andrew J.
Published in IEEE transactions on electron devices (01.09.2024)

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Journal Article

Scaled T-Gate β-Ga2O3 MESFETs With 2.45 kV Breakdown and High Switching Figure of Merit

Scaled T-Gate β-Ga2O3 MESFETs With 2.45 kV Breakdown and High Switching Figure of Merit

by Dryden, Daniel M., Liddy, Kyle J., Islam, Ahmad E., Williams, Jeremiah C., Walker, Dennis E., Hendricks, Nolan S., Moser, Neil A., Arias-Purdue, Andrea, Sepelak, Nicholas P., DeLello, Kursti, Chabak, Kelson D., Green, Andrew J.
Published in IEEE electron device letters (01.08.2022)

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Journal Article

Analytical Determination of Unipolar Diode Losses in Power Switching and Perspective for Ultra-Wide Bandgap Semiconductors

Analytical Determination of Unipolar Diode Losses in Power Switching and Perspective for Ultra-Wide Bandgap Semiconductors

by Hendricks, Nolan S., Piel, Joshua J., Islam, Ahmad E., Green, Andrew J.
Published in 2024 IEEE Applied Power Electronics Conference and Exposition (APEC) (25.02.2024)

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Conference Proceeding

Oxidized metal Schottky contact with high-κ dielectric field plate for low-loss high-power vertical β-Ga2O3 Schottky diodes

Oxidized metal Schottky contact with high-κ dielectric field plate for low-loss high-power vertical β-Ga2O3 Schottky diodes

by Farzana, Esmat, Bhattacharyya, Arkka, Hendricks, Nolan S., Itoh, Takeki, Krishnamoorthy, Sriram, Speck, James S.
Published in APL materials (01.11.2022)

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Journal Article

Analytical Determination of Majority Carrier Diode Losses in Power Switching and Perspective for Ultrawide Bandgap Semiconductors

Analytical Determination of Majority Carrier Diode Losses in Power Switching and Perspective for Ultrawide Bandgap Semiconductors

by Hendricks, Nolan S., Piel, Joshua J., Islam, Ahmad E., Green, Andrew J.
Published in IEEE transactions on electron devices (18.10.2024)

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Journal Article

Theoretical Power Figure-of-Merit in β -Ga 2 O 3 Lateral Power Transistors Determined Using Physics-Based TCAD Simulation

Theoretical Power Figure-of-Merit in β -Ga 2 O 3 Lateral Power Transistors Determined Using Physics-Based TCAD Simulation

by Ahmed, Shaikh S., Islam, Ahmad E., Dryden, Daniel M., Liddy, Kyle J., Hendricks, Nolan S., Moser, Neil A., Chabak, Kelson D., Green, Andrew J.
Published in IEEE transactions on electron devices (01.09.2024)

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Journal Article

Current transport mechanisms of metal/TiO2/β-Ga2O3 diodes

Current transport mechanisms of metal/TiO2/β-Ga2O3 diodes

by Hendricks, Nolan S., Islam, Ahmad E., Sowers, Elizabeth A., Williams, Jeremiah, Dryden, Daniel M., Liddy, Kyle J., Wang, Weisong, Speck, James S., Green, Andrew J.
Published in Journal of applied physics (07.03.2024)

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Journal Article

Vertical metal–dielectric–semiconductor diode on (001) β-Ga2O3 with high-κ TiO2 interlayer exhibiting reduced turn-on voltage and leakage current and improved breakdown

Vertical metal–dielectric–semiconductor diode on (001) β-Ga2O3 with high-κ TiO2 interlayer exhibiting reduced turn-on voltage and leakage current and improved breakdown

by Hendricks, Nolan S., Farzana, Esmat, Islam, Ahmad E., Leedy, Kevin D., Liddy, Kyle J., Williams, Jeremiah, Dryden, Daniel M., Adams, Aaron M., Speck, James S., Chabak, Kelson D., Green, Andrew J.
Published in Applied physics express (01.07.2023)

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Journal Article

$Thin channel β-Ga2O3 MOSFETs with self-aligned refractory metal gates$

Thin channel β-Ga2O3 MOSFETs with self-aligned refractory metal gates

by Liddy, Kyle J., Green, Andrew J., Hendricks, Nolan S., Heller, Eric R., Moser, Neil A., Leedy, Kevin D., Popp, Andreas, Lindquist, Miles T., Tetlak, Stephen E., Wagner, Günter, Chabak, Kelson D., Jessen, Gregg H.
Published in Applied physics express (01.12.2019)

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Journal Article

Scaled T-Gate β -Ga 2 O 3 MESFETs With 2.45 kV Breakdown and High Switching Figure of Merit

Scaled T-Gate β -Ga 2 O 3 MESFETs With 2.45 kV Breakdown and High Switching Figure of Merit

by Dryden, Daniel M., Liddy, Kyle J., Islam, Ahmad E., Williams, Jeremiah C., Walker, Dennis E., Hendricks, Nolan S., Moser, Neil A., Arias-Purdue, Andrea, Sepelak, Nicholas P., DeLello, Kursti, Chabak, Kelson D., Green, Andrew J.
Published in IEEE electron device letters (01.08.2022)

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Journal Article

Vertical metal–dielectric–semiconductor diode on (001) β-Ga 2 O 3 with high-κ TiO 2 interlayer exhibiting reduced turn-on voltage and leakage current and improved breakdown

Vertical metal–dielectric–semiconductor diode on (001) β-Ga 2 O 3 with high-κ TiO 2 interlayer exhibiting reduced turn-on voltage and leakage current and improved breakdown

by Hendricks, Nolan S., Farzana, Esmat, Islam, Ahmad E., Leedy, Kevin D., Liddy, Kyle J., Williams, Jeremiah, Dryden, Daniel M., Adams, Aaron M., Speck, James S., Chabak, Kelson D., Green, Andrew J.
Published in Applied physics express (01.07.2023)

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Journal Article

$Recessed-Gate Enhancement-Mode \beta -Ga2O3 MOSFETs$

Recessed-Gate Enhancement-Mode \beta -Ga2O3 MOSFETs

by Chabak, Kelson D., McCandless, Jonathan P., Moser, Neil A., Green, Andrew J., Mahalingam, Krishnamurthy, Crespo, Antonio, Hendricks, Nolan, Howe, Brandon M., Tetlak, Stephen E., Leedy, Kevin, Fitch, Robert C., Wakimoto, Daiki, Sasaki, Kohei, Kuramata, Akito, Jessen, Gregg H.
Published in IEEE electron device letters (01.01.2018)

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Journal Article

$Ni/TiO2/ \beta-Ga2O3 Heterojunction Diodes with NiO Guard Ring Simultaneously Increasing Breakdown Voltage and Reducing Turn-on Voltage$

Ni/TiO2/ \beta-Ga2O3 Heterojunction Diodes with NiO Guard Ring Simultaneously Increasing Breakdown Voltage and Reducing Turn-on Voltage

by Williams, Jeremiah, Hendricks, Nolan, Wang, Weisong, Adams, Aaron, Piel, Joshua, Dryden, Daniel, Liddy, Kyle, Sepelak, Nicholas, Morell, Bradley, Miesle, Adam, Islam, Ahmad, Green, Andrew
Published in 2023 Device Research Conference (DRC) (25.06.2023)

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Conference Proceeding

$Single-Event Burnout by Cf-252 Irradiation in Vertical \beta-Ga2O3 Diodes with Pt and PtOx Schottky Contacts and High Permittivity Dielectric Field Plate$

Single-Event Burnout by Cf-252 Irradiation in Vertical \beta-Ga2O3 Diodes with Pt and PtOx Schottky Contacts and High Permittivity Dielectric Field Plate

by Islam, Sajal, Senarath, Aditha S., Sengupta, Arijit, Zhang, En Xia, Ball, Dennis R., Fleetwood, Daniel M., Schrimpf, Ronald D., Farzana, Esmat, Bhattacharyya, Arkka, Hendricks, Nolan S., Speck, James S.
Published in 2023 Device Research Conference (DRC) (25.06.2023)

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Conference Proceeding

Lateral β-Ga 2 O 3 field effect transistors

Lateral β-Ga 2 O 3 field effect transistors

by Chabak, Kelson D, Leedy, Kevin D, Green, Andrew J, Mou, Shin, Neal, Adam T, Asel, Thaddeus, Heller, Eric R, Hendricks, Nolan S, Liddy, Kyle, Crespo, Antonio, Miller, Nicholas C, Lindquist, Miles T, Moser, Neil A, Fitch, Robert C, Walker, Dennis E, Dorsey, Donald L, Jessen, Gregg H
Published in Semiconductor science and technology (01.01.2020)

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Journal Article

$Thin channel β-Ga 2 O 3 MOSFETs with self-aligned refractory metal gates$

Thin channel β-Ga 2 O 3 MOSFETs with self-aligned refractory metal gates

by Liddy, Kyle J., Green, Andrew J., Hendricks, Nolan S., Heller, Eric R., Moser, Neil A., Leedy, Kevin D., Popp, Andreas, Lindquist, Miles T., Tetlak, Stephen E., Wagner, Günter, Chabak, Kelson D., Jessen, Gregg H.
Published in Applied physics express (01.12.2019)

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Journal Article

Self-Aligned Gate Thin-Channel β-Ga2O3MOSFETs

Self-Aligned Gate Thin-Channel β-Ga2O3MOSFETs

by Liddy, Kyle J., Hendricks, Nolan S., Green, Andrew J., Popp, Andreas, Lindquist, Miles T., Leedy, Kevin D., Tetlak, Stephen E., Moser, Neil A., Wagner, Gunter, Chabak, Kelson D., Jessen, Gregg H.
Published in 2019 Device Research Conference (DRC) (01.06.2019)

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Conference Proceeding

Electrical Properties of Ga2O3 Schottky Barrier Diodes with and without Mesa Structure

Electrical Properties of Ga2O3 Schottky Barrier Diodes with and without Mesa Structure

by Kim, Minyeong, Hendricks, Nolan, Moser, Neil, Shrestha, Pragya, Pookpanratana, Sujitra, Koo, Sang-Mo, Li, Qiliang
Published in Meeting abstracts (Electrochemical Society) (28.08.2023)

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Journal Article

Electrical Properties of Ga 2 O 3 Schottky Barrier Diodes with and without Mesa Structure

Electrical Properties of Ga 2 O 3 Schottky Barrier Diodes with and without Mesa Structure

by Kim, Minyeong, Hendricks, Nolan, Moser, Neil, Shrestha, Pragya, Pookpanratana, Sujitra, Koo, Sang-Mo, Li, Qiliang
Published in Meeting abstracts (Electrochemical Society) (28.08.2023)

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Journal Article