Capacitance transient study of a bistable deep level in e−-irradiated n-type 4H-SiC
Beyer, F C, Hemmingsson, C G, Pedersen, H, Henry, A, Isoya, J, Morishita, N, Ohshima, T, Janzén, E
Published in Journal of physics. D, Applied physics (14.11.2012)
Published in Journal of physics. D, Applied physics (14.11.2012)
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Journal Article
Configuration transformation of metastable defects in 6H-SiC
Hemmingsson, C G, Son, N T, Kordina, O, Lindström, J L, Janzén, E
Published in Semiconductor science and technology (01.03.1999)
Published in Semiconductor science and technology (01.03.1999)
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Journal Article
Radiation-induced defects in GaN
Son, N T, Hemmingsson, C G, Morishita, N, Ohshima, T, Paskova, T, Evans, K R, Usui, A, Isoya, J, Monemar, B, Janzén, E
Published in Physica scripta (01.11.2010)
Published in Physica scripta (01.11.2010)
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Journal Article
Capacitance transient study of a bistable deep level in e super(-)-irradiated n-type 4H-SiC
Beyer, F C, Hemmingsson, C G, Pedersen, H, Henry, A, Isoya, J, Morishita, N, Ohshima, T, Janzen, E
Published in Journal of physics. D, Applied physics (14.11.2012)
Published in Journal of physics. D, Applied physics (14.11.2012)
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Journal Article
Time-resolved spectroscopy of freestanding GaN layers grown by halide vapour phase epitaxy
Pozina, G., Hemmingsson, C.G., Bergman, J.P., Trinh, D., Hultman, L., Monemar, B.
Published in Superlattices and microstructures (01.05.2008)
Published in Superlattices and microstructures (01.05.2008)
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