An In-Flash Binary Neural Network Accelerator with SLC NAND Flash Array
Choi, Won Ho, Chiu, Pi-Feng, Ma, Wen, Hemink, Gertjan, Hoang, Tung Thanh, Lueker-Boden, Martin, Bandic, Zvonimir
Published in 2020 IEEE International Symposium on Circuits and Systems (ISCAS) (01.10.2020)
Published in 2020 IEEE International Symposium on Circuits and Systems (ISCAS) (01.10.2020)
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Conference Proceeding
Modeling of the hole current caused by Fowler-Nordheim tunneling through thin oxides
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Conference Proceeding
Journal Article
A 151-mm ^ 64-Gb 2 Bit/Cell NAND Flash Memory in 24-nm CMOS Technology
Fukuda, K., Watanabe, Y., Makino, E., Kawakami, K., Sato, J., Takagiwa, T., Kanagawa, N., Shiga, H., Tokiwa, N., Shindo, Y., Ogawa, T., Edahiro, T., Iwai, M., Nagao, O., Musha, J., Minamoto, T., Furuta, Y., Yanagidaira, K., Suzuki, Y., Nakamura, D., Hosomura, Y., Tanaka, R., Komai, H., Muramoto, M., Shikata, G., Yuminaka, A., Sakurai, K., Sakai, M., Hong Ding, Watanabe, M., Kato, Y., Miwa, T., Mak, A., Nakamichi, M., Hemink, G., Lee, D., Higashitani, M., Murphy, B., Bo Lei, Matsunaga, Y., Naruke, K., Hara, T.
Published in IEEE journal of solid-state circuits (01.01.2012)
Published in IEEE journal of solid-state circuits (01.01.2012)
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Journal Article
A 151-mm 2 64-Gb 2 Bit/Cell NAND Flash Memory in 24-nm CMOS Technology
Fukuda, Koichi, Watanabe, Yoshihisa, Makino, Eiichi, Kawakami, Koichi, Sato, Jumpei, Takagiwa, Teruo, Kanagawa, Naoaki, Shiga, Hitoshi, Tokiwa, Naoya, Shindo, Yoshihiko, Ogawa, Takeshi, Edahiro, Toshiaki, Iwai, Makoto, Nagao, Osamu, Musha, Junji, Minamoto, Takatoshi, Furuta, Yuka, Yanagidaira, Kosuke, Suzuki, Yuya, Nakamura, Dai, Hosomura, Yoshikazu, Tanaka, Rieko, Komai, Hiromitsu, Muramoto, Mai, Shikata, Go, Yuminaka, Ayako, Sakurai, Kiyofumi, Sakai, Manabu, Ding, Hong, Watanabe, Mitsuyuki, Kato, Yosuke, Miwa, Toru, Mak, Alexander, Nakamichi, Masaru, Hemink, Gertjan, Lee, Dana, Higashitani, Masaaki, Murphy, Brian, Lei, Bo, Matsunaga, Yasuhiko, Naruke, Kiyomi, Hara, Takahiko
Published in IEEE journal of solid-state circuits (01.01.2012)
Published in IEEE journal of solid-state circuits (01.01.2012)
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Journal Article
Stress-induced leakage current of tunnel oxide derived from flash memory read-disturb characteristics
Satoh, S., Hemink, G., Hatakeyama, K., Aritome, S.
Published in IEEE transactions on electron devices (01.02.1998)
Published in IEEE transactions on electron devices (01.02.1998)
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Journal Article
A 120mm2 16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology
Kanda, Kazushige, Koyanagi, Masaru, Yamamura, Toshio, Hosono, Koji, Yoshihara, Masahiro, Miwa, Toru, Kato, Yosuke, Mak, Alex, Chan, Siu Lung, Tsai, Frank, Cernea, Raul, Le, Binh, Makino, Eiichi, Taira, Takashi, Otake, Hiroyuki, Kajimura, Norifumi, Fujimura, Susumu, Takeuchi, Yoshiaki, Itoh, Mikihiko, Shirakawa, Masanobu, Nakamura, Dai, Suzuki, Yuya, Okukawa, Yuki, Kojima, Masatsugu, Yoneya, Kazuhide, Arizono, Takamichi, Hisada, Toshiki, Miyamoto, Shinji, Noguchi, Mitsuhiro, Yaegashi, Toshitake, Higashitani, Masaaki, Ito, Fumitoshi, Kamei, Teruhiko, Hemink, Gertjan, Maruyama, Tooru, Ino, Kazumi, Ohshima, Shigeo
Published in 2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers (01.02.2008)
Published in 2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers (01.02.2008)
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Conference Proceeding
Reliability issues of flash memory cells
Aritome, S., Shirota, R., Hemink, G., Endoh, T., Masuoka, F.
Published in Proceedings of the IEEE (01.05.1993)
Published in Proceedings of the IEEE (01.05.1993)
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Journal Article
A 56-nm CMOS 99-mm2 8-Gb multi-level NAND flash memory with 10-MB/s program throughput
TAKEUCHI, Ken, KAMEDA, Yasushi, IWAI, Makoto, SHIRAKAWA, Masanobu, ICHIGE, Masayuki, HATAKEYAMA, Kazuo, TANAKA, Shinichi, KAMEI, Teruhiko, FU, Jia-Yi, CEMEA, Adi, YAN LI, HIGASHITAM, Masaaki, FUJIMURA, Susumu, HEMINK, Gertjan, SATO, Shinji, OOWADA, Ken, LEE, Shih-Chung, HAYASHIDA, Naoki, JUN WAN, LUTZE, Jeffrey, TSAO, Shouchang, MOFIDI, Mehrdad, SAKURAI, Kiyofumi, OTAKE, Hiroyuki, TOKIWA, Naoya, WAKI, Hiroko, NOZAWA, Yasumitsu, KANAZAWA, Kazuhisa, OHSHIMA, Shigeo, HOSONO, Koji, SHIGA, Hitoshi, WATANABE, Yoshihisa, FUTATSUYAMA, Takuya, SHINDO, Yoshihiko, KOJIMA, Masatsugu
Published in IEEE journal of solid-state circuits (2007)
Published in IEEE journal of solid-state circuits (2007)
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Journal Article
A 56-nm CMOS 99- }^ 8-Gb Multi-Level NAND Flash Memory With 10-MB/s Program Throughput
Takeuchi, K., Kameda, Y., Fujimura, S., Otake, H., Hosono, K., Shiga, H., Watanabe, Y., Futatsuyama, T., Shindo, Y., Kojima, M., Iwai, M., Shirakawa, M., Ichige, M., Hatakeyama, K., Tanaka, S., Kamei, T., Jia-Yi Fu, Cernea, A., Yan Li, Higashitani, M., Hemink, G., Sato, S., Oowada, K., Shih-Chung Lee, Hayashida, N., Jun Wan, Lutze, J., Shouchang Tsao, Mofidi, M., Sakurai, K., Tokiwa, N., Waki, H., Nozawa, Y., Kanazawa, K., Ohshima, S.
Published in IEEE journal of solid-state circuits (01.01.2007)
Published in IEEE journal of solid-state circuits (01.01.2007)
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Journal Article
A 151-mm2 64-Gb 2 Bit/Cell NAND Flash Memory in 24-nm CMOS Technology
FUKUDA, Koichi, WATANABE, Yoshihisa, OGAWA, Takeshi, EDAHIRO, Toshiaki, IWAI, Makoto, NAGAO, Osamu, MUSHA, Junji, MINAMOTO, Takatoshi, FURUTA, Yuka, YANAGIDAIRA, Kosuke, SUZUKI, Yuya, NAKAMURA, Dai, MAKINO, Eiichi, HOSOMURA, Yoshikazu, TANAKA, Rieko, KOMAI, Hiromitsu, MURAMOTO, Mai, SHIKATA, Go, YUMINAKA, Ayako, SAKURAI, Kiyofumi, SAKAI, Manabu, HONG DING, WATANABE, Mitsuyuki, KAWAKAMI, Koichi, KATO, Yosuke, MIWA, Toru, MAK, Alexander, NAKAMICHI, Masaru, HEMINK, Gertjan, LEE, Dana, HIGASHITANI, Masaaki, MURPHY, Brian, BO LEI, MATSUNAGA, Yasuhiko, SATO, Jumpei, NARUKE, Kiyomi, HARA, Takahiko, TAKAGIWA, Teruo, KANAGAWA, Naoaki, SHIGA, Hitoshi, TOKIWA, Naoya, SHINDO, Yoshihiko
Published in IEEE journal of solid-state circuits (2012)
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Published in IEEE journal of solid-state circuits (2012)
Conference Proceeding
A 151mm2 64Gb MLC NAND flash memory in 24nm CMOS technology
Fukuda, K, Watanabe, Y, Makino, E, Kawakami, K, Sato, J, Takagiwa, T, Kanagawa, N, Shiga, H, Tokiwa, N, Shindo, Y, Edahiro, T, Ogawa, T, Iwai, M, Nagao, O, Musha, J, Minamoto, T, Yanagidaira, K, Suzuki, Y, Nakamura, D, Hosomura, Y, Komai, H, Furuta, Y, Muramoto, M, Tanaka, R, Shikata, G, Yuminaka, A, Sakurai, K, Sakai, M, Ding, H, Watanabe, M, Kato, Y, Miwa, T, Mak, A, Nakamichi, M, Hemink, G, Lee, D, Higashitani, M, Murphy, B, Lei, B, Matsunaga, Y, Naruke, K, Hara, T
Published in 2011 IEEE International Solid-State Circuits Conference (01.02.2011)
Published in 2011 IEEE International Solid-State Circuits Conference (01.02.2011)
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Conference Proceeding
A compact on-chip ECC for low cost flash memories
Tanzawa, T., Tanaka, T., Takeuchi, K., Shirota, R., Aritome, S., Watanabe, H., Hemink, G., Shimizu, K., Sato, S., Takeuchi, Y., Ohuchi, K.
Published in IEEE journal of solid-state circuits (01.05.1997)
Published in IEEE journal of solid-state circuits (01.05.1997)
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Journal Article
ELECTRICALLY REWRITABLE NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE
TANAKA, YOSHIYUKI, SHUTO, SUSUMU, TANAKA, TOMOHARU, TANZAWA, TORU, ENDOH, TETSUO, ARITOME, RIICHIRO, HEMINK, GERTJAN
Year of Publication 15.05.1998
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Year of Publication 15.05.1998
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