Single event effects in PDSOI 4 M SRAM fabricated in UNIBOND
Liu, S.T., Heikkila, W.W., Golke, K.W., Anthony, D., Hurst, A., Kirchner, G., Jenkins, W.C., Hughes, H.L., Mitra, S., Ioannou, D.E.
Published in IEEE transactions on nuclear science (01.12.2003)
Published in IEEE transactions on nuclear science (01.12.2003)
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Journal Article
Proton induced single event upset in a 4M SOI SRAM
Liu, H. Y., Liu, S.T., Golke, K.W., Nelson, D.K., Heikkila, W.W., Jenkins, W.C.
Published in 2003 IEEE International Conference on SOI (2003)
Published in 2003 IEEE International Conference on SOI (2003)
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Conference Proceeding
Design methodology of a 1.2-/spl mu/m double-level-metal CMOS technology
Preckshot, N.E., Campbell, S.A., Heikkila, W.W., Dokos, D., Passow, R.H., Grant, W.N., Schultz, D., Victorey, J.P.
Published in IEEE journal of solid-state circuits (01.02.1984)
Published in IEEE journal of solid-state circuits (01.02.1984)
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Journal Article
Design methodology of a 1.2-µm double-level-metal CMOS technology
Preckshot, N.E., Campbell, S.A., Heikkila, W.W., Dokos, D., Passow, R.H., Grant, W.N., Schultz, D., Victorey, J.P.
Published in IEEE transactions on electron devices (01.02.1984)
Published in IEEE transactions on electron devices (01.02.1984)
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Journal Article
Design methodology of a 1.2-μm double-level-metal CMOS technology
PRECKSHOT, N. E, CAMPBELL, S. A, HEIKKILA, W. W, DOKOS, D, PASSOW, R. H, GRANT, W. N, SCHULTZ, D, VICTOREY, J. P
Published in IEEE journal of solid-state circuits (01.01.1984)
Published in IEEE journal of solid-state circuits (01.01.1984)
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Journal Article