Origin of improved RF performance of AlGaN/GaN MOSHFETs compared to HFETs
Marso, M., Heidelberger, G., Indlekofer, K.M., Bernat, J., Fox, A., Kordos, P., Luth, H.
Published in IEEE transactions on electron devices (01.07.2006)
Published in IEEE transactions on electron devices (01.07.2006)
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Journal Article
Comparison of AlGaN/GaN MSM Varactor Diodes Based on HFET and MOSHFET Layer Structures
Marso, M., Fox, A., Heidelberger, G., Kordos, P., Luth, H.
Published in IEEE electron device letters (01.12.2006)
Published in IEEE electron device letters (01.12.2006)
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Journal Article
Comparative study on unpassivated and passivated AlGaN/GaN HFETs and MOSHFETs
Heidelberger, G., Bernát, J., Fox, A., Marso, M., Lüth, H., Gregušová, D., Kordoš, P.
Published in Physica status solidi. A, Applications and materials science (01.05.2006)
Published in Physica status solidi. A, Applications and materials science (01.05.2006)
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Journal Article
Conference Proceeding
Characterization of AlGaN/GaN MOSHFETs with Al2O3 as gate oxide
Gregušová, D., Stoklas, R., Čičo, K., Heidelberger, G., Marso, M., Novák, J., Kordoš, P.
Published in Physica status solidi. C (01.06.2007)
Published in Physica status solidi. C (01.06.2007)
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Journal Article
An AlGaN/GaN two-color photodetector based on an AlGaN/GaN/SiC HEMT layer structure
Marso, M., Fox, A., Heidelberger, G., Bernát, J., Lüth, H.
Published in Physica status solidi. C (01.06.2006)
Published in Physica status solidi. C (01.06.2006)
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Journal Article
Performance evaluation of power control algorithms in cellular UTRA systems
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Conference Proceeding
New approaches for growth control of GaN-based HEMT structures
Hardtdegen, H., Steins, R., Kaluza, N., Cho, Y.S., Wirtz, K., von der Ahe, M., Bay, H.L., Heidelberger, G., Marso, M.
Published in Applied physics. A, Materials science & processing (01.06.2007)
Published in Applied physics. A, Materials science & processing (01.06.2007)
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Journal Article
SiO 2 /AlGaN/GaN MOSHFET with 0.7 µm gate-length and f max / f T of 40/24 GHz
Bernát, J., Gregušová, D., Heidelberger, G., Fox, A., Marso, M., Lüth, H., Kordoš, P.
Published in Electronics letters (26.05.2005)
Published in Electronics letters (26.05.2005)
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Journal Article
SiO^sub 2^/AlGaN/GaN MOSHFET with 0.7 µm gate-length and f^sub max^/f^sub T^ of 40/24 GHz
Bernát, J, Gregusová, D, Heidelberger, G, Fox, A, Marso, M, Lüth, H, Kordos, P
Published in Electronics letters (26.05.2005)
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Published in Electronics letters (26.05.2005)
Journal Article
SiO sub( 2)/AlGaN/GaN MOSHFET with 0.7 mu m gate-length and f sub( max)/f sub( T) of 40/24 GHz
Bernat, J, Gregusova, D, Heidelberger, G, Fox, A, Marso, M, Lueth, H, Kordos, P
Published in Electronics letters (01.05.2005)
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Published in Electronics letters (01.05.2005)
Journal Article
New approaches for growth control of GaN-based HEMT structures: From surface science to nanoscale devices
HARDTDEGEN, H, STEINS, R, KALUZA, N, CHO, Y. S, WIRTZ, K, VON DER AHE, M, BAY, H. L, HEIDELBERGER, G, MARSO, M
Published in Applied physics. A, Materials science & processing (2007)
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Published in Applied physics. A, Materials science & processing (2007)
Journal Article
SiO2/AlAaN/GaN MOSHFET with 0.7 μm gate-length and fmax/ft of 40/24 GHz
BERNAT, J, GREGUSOVA, D, HEIDELBERGER, G, FOX, A, MARSO, M, LÜTH, H, KORDOS, P
Published in Electronics letters (2005)
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Published in Electronics letters (2005)
Journal Article
Characterization of AlGaN/GaN MOSHFETs with Al 2 O 3 as gate oxide
Gregušová, D., Stoklas, R., Čičo, K., Heidelberger, G., Marso, M., Novák, J., Kordoš, P.
Published in Physica status solidi. C (01.06.2007)
Published in Physica status solidi. C (01.06.2007)
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Journal Article
RF characterization and modeling of AlGaN/GaN based HFETs and MOSHFETs
Fox, A., Marso, M., Heidelberger, G., Kordos, P.
Published in 2006 International Conference on Advanced Semiconductor Devices and Microsystems (01.10.2006)
Published in 2006 International Conference on Advanced Semiconductor Devices and Microsystems (01.10.2006)
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Conference Proceeding
Comparison of AlGaN/GaN MSM varactor diodes based on HFET and MOSHFET layer structures
Marso, M., Fox, A., Heidelberger, G., Kordos, P., Luth, H.
Published in 2006 International Conference on Advanced Semiconductor Devices and Microsystems (01.10.2006)
Published in 2006 International Conference on Advanced Semiconductor Devices and Microsystems (01.10.2006)
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Conference Proceeding
Technology related issues regarding fabrication of AlGaN/GaN-based MOSHFETs with GdScO3 as dielectric
Heidelberger, G., Roeckerath, M., Steins, R., Stefaniak, M., Fox, A., Schubert, J., Kaluza, N., Marso, M., Luth, H., Kordos, P.
Published in 2006 International Conference on Advanced Semiconductor Devices and Microsystems (01.10.2006)
Published in 2006 International Conference on Advanced Semiconductor Devices and Microsystems (01.10.2006)
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Conference Proceeding