Diffusion of implanted nitrogen in silicon
Shaik Adam, Lahir, Law, Mark E., Jones, Kevin S., Dokumaci, Omer, Murthy, C. S., Hegde, Suri
Published in Journal of applied physics (01.03.2000)
Published in Journal of applied physics (01.03.2000)
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Journal Article
Physical integrated diffusion-oxidation model for implanted nitrogen in silicon
Adam, Lahir Shaik, Law, Mark E., Dokumaci, Omer, Hegde, Suri
Published in Journal of applied physics (15.02.2002)
Published in Journal of applied physics (15.02.2002)
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Journal Article
An experimental study on transport issues and electrostatics of ultrathin body SOI pMOSFETs
Ren, Z., Hegde, S., Doris, B., Oldiges, P., Kanarsky, T., Dokumaci, O., Roy, R., Leong, M., Jones, E.C., Wong, H.-S.P.
Published in IEEE electron device letters (01.10.2002)
Published in IEEE electron device letters (01.10.2002)
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Journal Article
Comprehensive model for nitrogen diffusion in silicon
Adam, L.S., Law, M.E., Hegde, S., Dokumaci, O.
Published in International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) (2001)
Published in International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) (2001)
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Conference Proceeding
DUAL GATE OXIDE PROCESS FOR UNIFORM OXIDE THICKNESS
KUDELKA, STEPHAN, TEWS, HELMUT, HEGDE, SURI, GLUSCHENKOV, OLEG, WEYBRIGHT, MARY
Year of Publication 01.05.2003
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Year of Publication 01.05.2003
Patent
DUAL GATE OXIDE PROCESS FOR UNIFORM OXIDE THICKNESS
KUDELKA, STEPHAN, TEWS, HELMUT, HEGDE, SURI, GLUSCHENKOV, OLEG, WEYBRIGHT, MARY
Year of Publication 10.05.2002
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Year of Publication 10.05.2002
Patent
Dual gate oxide process for uniform oxide thickness
GLUSCHENKOV OLEG, TEWS HELMUT HORST, KUDELKA STEPHAN, HEGDE SURI, WEYBRIGHT MARY
Year of Publication 17.07.2001
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Year of Publication 17.07.2001
Patent