Search Results - "Heemyong Park" :: K.UTB vyhledávací portál

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A point defect based two-dimensional model of the evolution of dislocation loops in silicon during oxidation

by HEEMYONG PARK, JONES, K. D, LAW, M. E
Published in Journal of the Electrochemical Society (01.03.1994)

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Journal Article

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The effects of strain on dopant diffusion in silicon

by Heemyong Park, Jones, K.S., Slinkman, J.A., Law, M.E.
Published in Proceedings of IEEE International Electron Devices Meeting (1993)

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Conference Proceeding

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Method of building a CMOS structure on thin SOI with source/drain electrodes formed by in situ doped selective amorphous silicon

by Park, Heemyong, Assaderaghi, Fariborz, Mandelman, Jack A
Year of Publication 07.03.2006

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Patent

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Method of building a CMOS structure on thin SOI with source/drain electrodes formed by in situ doped selective amorphous silicon

by PARK HEEMYONG, ASSADERAGHI FARIBORZ, MANDELMAN JACK A
Year of Publication 07.03.2006

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Patent

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CMOS structure with maximized polysilicon gate activation and a method for selectively maximizing doping activation in gate, extension, and source/drain regions

by Park, Heemyong, Schepis, Dominic J, Assaderaghi, Fariborz
Year of Publication 26.10.2004

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Patent

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CMOS structure with maximized polysilicon gate activation and a method for selectively maximizing doping activation in gate, extension, and source/drain regions

by PARK HEEMYONG, ASSADERAGHI FARIBORZ, SCHEPIS DOMINIC J
Year of Publication 26.10.2004

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Patent

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Method of building a CMOS structure on thin SOI with source/drain electrodes formed by in situ doped selective amorphous silicon

by Park, Heemyong, Assaderaghi, Fariborz, Mandelman, Jack
Year of Publication 22.07.2004

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Patent

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Method of building a CMOS structure on thin SOI with source/drain electrodes formed by in situ doped selective amorphous silicon

by PARK HEEMYONG, ASSADERAGHI FARIBORZ, MANDELMAN JACK A
Year of Publication 22.07.2004

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Patent

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Method of building a CMOS structure on thin SOI with source/drain electrodes formed by in situ doped selective amorphous silicon

by Park, Heemyong, Assaderaghi, Fariborz, Mandelman, Jack A
Year of Publication 11.05.2004

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Patent

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Method of building a CMOS structure on thin SOI with source/drain electrodes formed by in situ doped selective amorphous silicon

by PARK HEEMYONG, ASSADERAGHI FARIBORZ, MANDELMAN JACK A
Year of Publication 11.05.2004

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Patent

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A CMOS structure with maximized polysilicon gate activation and a method for selectively maximizing doping activation in gate, extension, and source/drain regions

by ASSADERAGHI, FARIBORZ, PARK, HEEMYONG, SCHEPIS, DOMINIC J
Year of Publication 01.05.2004

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Patent

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Reduced stress isolation for SOI devices and a method for fabricating

by Racanelli, Marco, Shin, Hyungcheol, Park, Heemyong
Year of Publication 30.09.2003

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Patent

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Reduced stress isolation for SOI devices and a method for fabricating

by PARK HEEMYONG, SHIN HYUNGCHEOL, RACANELLI MARCO
Year of Publication 30.09.2003

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Patent

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ACTIVATION OF GATE DOPED ON HIGH DIELECTRIC CONSTANT MATERIAL

by MAR H WILLIAM, PARK HEEMYONG, ASSADERAGHI FARIBORZ
Year of Publication 11.04.2003

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Patent

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Method of building a CMOS structure on thin SOI with source/drain electrodes formed by in situ doped selective amorphous silicon

by Park, Heemyong, Assaderaghi, Fariborz, Mandelman, Jack
Year of Publication 13.02.2003

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Patent

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Method of building a CMOS structure on thin SOI with source/drain electrodes formed by in situ doped selective amorphous silicon

by PARK HEEMYONG, ASSADERAGHI FARIBORZ, MANDELMAN JACK A
Year of Publication 13.02.2003

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Patent

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Activating in-situ doped gate on high dielectric constant materials

by Ma, William, Park, Heemyong, Assaderaghi, Fariborz
Year of Publication 06.02.2003

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Patent

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Method of manufacturing vertical semiconductor device

by PARK HEEMYONG, FORD JENNY M, TANG ZHIRONG
Year of Publication 10.12.2002

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Patent

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Method of manufacturing vertical semiconductor device

by Tang, Zhirong, Park, Heemyong, Ford, Jenny M
Year of Publication 10.12.2002

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Patent

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CMOS STRUCTURE WITH MAXIMIZED ACTIVATION OF THE POLYSILICON GATE DOPANT AND METHOD OF MANUFACTURING THE SAME

by ASSADERAGHI, FARIBORZ, PARK, HEEMYONG, SCHEPIS, DOMINIC, JOSEPH
Year of Publication 21.11.2002

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Patent

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