Hall effect and Raman analysis of residual damage and free electron concentration in Si-implanted GaAs: a quest for better doping efficiency
Desnica-Franković, I.D., Desnica, U.V., Furić, K., Wagner, J., Haynes, T.E.
Published in The Journal of physics and chemistry of solids (01.07.2005)
Published in The Journal of physics and chemistry of solids (01.07.2005)
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Oriented, single domain Fe nanoparticle layers in single crystal yttria-stabilized zirconia
Sorge, K.D., Thompson, J.R., Schulthess, T.C., Modine, F.A., Haynes, T.E., Honda, S.-I., Meldrum, A., Budai, J.D., White, C.W., Boatner, L.A.
Published in IEEE transactions on magnetics (01.07.2001)
Published in IEEE transactions on magnetics (01.07.2001)
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Conference Proceeding
The metabolic basis of arginine nutrition and pharmacotherapy
Flynn, N.E, Meininger, C.J, Haynes, T.E, Wu, G
Published in Biomedicine & pharmacotherapy (01.11.2002)
Published in Biomedicine & pharmacotherapy (01.11.2002)
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Journal Article
Particle–solid interactions and 21st century materials science
Feldman, L.C., Lűpke, G., Tolk, N.H., Lopez, R., Haglund, R.F., Haynes, T.E., Boatner, L.A.
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.12.2003)
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.12.2003)
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Damage, defects and diffusion from ultra-low energy (0–5 keV) ion implantation of silicon
Agarwal, Aditya, Gossmann, H.-J, Eaglesham, D.J, Pelaz, L, Herner, S.B, Jacobson, D.C, Haynes, T.E, Simonton, R
Published in Materials science in semiconductor processing (01.04.1998)
Published in Materials science in semiconductor processing (01.04.1998)
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Quantitative evolution of vacancy-type defects in high-energy ion-implanted Si: Au labeling and the vacancy implanter
Kalyanaraman, R, Haynes, T.E, Yoon, M, Larson, B.C, Jacobson, D.C, Gossmann, H.-J, Rafferty, C.S
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.04.2001)
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.04.2001)
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Critical issues in ion implantation of silicon below 5 keV: Defects and diffusion
Agarwal, Aditya, Gossmann, H.-J, Eaglesham, D.J, Pelaz, L, Jacobson, D.C, Poate, J.M, Haynes, T.E
Published in Materials science & engineering. A, Structural materials : properties, microstructure and processing (30.09.1998)
Published in Materials science & engineering. A, Structural materials : properties, microstructure and processing (30.09.1998)
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The mechanisms of iron gettering in silicon by boron ion-implantation
BENTON, J. L, STOLK, P. A, EAGLESHAM, D. J, JACOBSON, D. C, CHENG, J. Y, POATE, J. M, MYERS, S. M, HAYNES, T. E
Published in Journal of the Electrochemical Society (01.04.1996)
Published in Journal of the Electrochemical Society (01.04.1996)
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Inversion of dose rate effects in ion implanted gallium arsenide in the low dose regime
Jasper, C., Morton, R., Lau, S.S., Haynes, T.E., Garcia, R., Mayer, J.W.
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.03.1995)
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.03.1995)
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Efficient production of silicon-on-insulator films by co-implantation of He/sup +/ with H/sup
Agarwal, A., Haynes, T.E., Venezia, V.C., Eaglesham, D.J., Welson, M.K., Chabal, Y.J., Holland, O.W.
Published in 1997 IEEE International SOI Conference Proceedings (1997)
Published in 1997 IEEE International SOI Conference Proceedings (1997)
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Conference Proceeding
Raman study of damage processes in Si+-implanted GaAs
Ivanda, M., Desnica, U.V., Haynes, T.E., Hartmann, I., Kiefer, W.
Published in Journal of molecular structure (15.03.1995)
Published in Journal of molecular structure (15.03.1995)
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Journal Article
Mechanism of silicon exfoliation by hydrogen implantation and He, Li and Si co-implantation [SOI technology]
Weldon, M.K., Marsico, V.E., Chabal, Y.J., Collot, M., Caudano, Y., Christman, S.B., Chaban, E.E., Jacobson, D.C., Brown, W.L., Sapjeta, J., Hsieh, C.-M., Goodwin, C.A., Agarwal, A., Venezia, V.C., Haynes, T.E., Jackson, W.B.
Published in 1997 IEEE International SOI Conference Proceedings (1997)
Published in 1997 IEEE International SOI Conference Proceedings (1997)
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Conference Proceeding
Transient enhanced diffusion from implantation of molecular decaborane ions
Agarwal, A., Gossmann, H.-J., Jacobson, D.C., Eaglesham, D.J., Sosnowski, M., Poate, J.M., Yamada, I., Matsuo, J., Haynes, T.E.
Published in 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) (1998)
Published in 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) (1998)
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Conference Proceeding
Boron-enhanced-diffusion of boron: The limiting factor for ultra-shallow junctions
Agarwal, A., Eaglesham, D.J., Gossmann, H.-J., Pelaz, L., Herner, S.B., Jacobson, D.C., Haynes, T.E., Erokhin, Y., Simonton, R.
Published in International Electron Devices Meeting. IEDM Technical Digest (1997)
Published in International Electron Devices Meeting. IEDM Technical Digest (1997)
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