A Floating-Body Cell Fully Compatible With 90-nm CMOS Technology Node for a 128-Mb SOI DRAM and Its Scalability
Hamamoto, T., Minami, Y., Shino, T., Kusunoki, N., Nakajima, H., Morikado, M., Yamada, T., Inoh, K., Sakamoto, A., Higashi, T., Fujita, K., Hatsuda, K., Ohsawa, T., Nitayama, A.
Published in IEEE transactions on electron devices (01.03.2007)
Published in IEEE transactions on electron devices (01.03.2007)
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Analysis of hot carrier instability in a floating body cell
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Published in Japanese Journal of Applied Physics (02.09.2024)
Published in Japanese Journal of Applied Physics (02.09.2024)
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A perspective on NVRAM technology for future computing system
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Published in 2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) (01.04.2019)
Published in 2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) (01.04.2019)
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