Wide Bandgap SiC-Based Oxide Thickness Optimization by Computation and Simulation using Enhanced Electron Mobility with Regulated Gate Voltage Technique for High-Power 4H-SiC MOSFET
Poobalan, Banu, Hashim, Nuralia Syahida, Natarajan, Manikandan, Rahim, Alhan Farhanah Abd
Published in Journal of Engineering and Technological Sciences (20.06.2024)
Published in Journal of Engineering and Technological Sciences (20.06.2024)
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The Modelling of SiC Gate Oxide Thickness based on Thermal Oxidation Temperatures and Durations for High-Voltage Applications
Hashim, Nuralia Syahida, Poobalan, Banu, Zakaria, Nor Farhani, Natarajan, Manikandan, Shaari, Safizan
Published in Trends in sciences (01.06.2023)
Published in Trends in sciences (01.06.2023)
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