Mg Doping of N-Polar, In-Rich InAlN
Kuzmík, Ján, Pohorelec, Ondrej, Hasenöhrl, Stanislav, Blaho, Michal, Stoklas, Roman, Dobročka, Edmund, Rosová, Alica, Kučera, Michal, Gucmann, Filip, Gregušová, Dagmar, Precner, Marian, Vincze, Andrej
Published in Materials (10.03.2023)
Published in Materials (10.03.2023)
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Journal Article
Generation of hole gas in non-inverted InAl(Ga)N/GaN heterostructures
Hasenöhrl, Stanislav, Chauhan, Prerna, Dobro ka, Edmund, Stoklas, Roman, Van o, ubomír, Veselý, Marián, Bouazzaoui, Farah, Chauvat, Marie-Pierre, Ruterana, Pierre, Kuzmík, Ján
Published in Applied physics express (01.01.2019)
Published in Applied physics express (01.01.2019)
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Journal Article
InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region
Gregušová, Dagmar, Tóth, Lajos, Pohorelec, Ondrej, Hasenöhrl, Stanislav, Haš ík, Štefan, Cora, Ildikó, Fogarassy, Zsolt, Stoklas, Roman, Seifertová, Alena, Blaho, Michal, Lauren íková, Agáta, Oyobiki, Tatsuya, Pécz, Béla, Hashizume, Tamotsu, Kuzmík, Ján
Published in Japanese Journal of Applied Physics (01.06.2019)
Published in Japanese Journal of Applied Physics (01.06.2019)
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Journal Article
Analysis and Modeling of Vertical Current Conduction and Breakdown Mechanisms in Semi-Insulating GaN Grown on GaN: Role of Deep Levels
Stoklas, Roman, Chvala, Ales, Sichman, Peter, Hasenohrl, Stanislav, Hascik, Stefan, Priesol, Juraj, Satka, Alexander, Kuzmik, Jan
Published in IEEE transactions on electron devices (01.05.2021)
Published in IEEE transactions on electron devices (01.05.2021)
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Journal Article
Vertical GaN Transistor with Semi‐Insulating Channel
Šichman, Peter, Stoklas, Roman, Hasenöhrl, Stanislav, Gregušová, Dagmar, Ťapajna, Milan, Hudec, Boris, Haščík, Štefan, Hashizume, Tamotsu, Chvála, Aleš, Šatka, Alexander, Kuzmík, Ján
Published in Physica status solidi. A, Applications and materials science (01.08.2023)
Published in Physica status solidi. A, Applications and materials science (01.08.2023)
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Journal Article
InN crystal habit, structural, electrical, and optical properties affected by sapphire substrate nitridation in N-polar InN/InAlN heterostructures
Gucmann, Filip, Kučera, Michal, Hasenöhrl, Stanislav, Eliáš, Peter, Rosová, Alica, Dobročka, Edmund, Stoklas, Roman, Kuzmík, Ján
Published in Semiconductor science and technology (01.07.2021)
Published in Semiconductor science and technology (01.07.2021)
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Journal Article
Growth of N-polar In-rich InAlN by metal organic chemical vapor deposition on on- and off-axis sapphire
Hasenöhrl, Stanislav, Blaho, Michal, Dobročka, Edmund, Gucmann, Filip, Kučera, Michal, Nádaždy, Peter, Stoklas, Roman, Rosová, Alica, Kuzmík, Ján
Published in Materials science in semiconductor processing (15.03.2023)
Published in Materials science in semiconductor processing (15.03.2023)
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Journal Article
Effect of temperature and carrier gas on the properties of thick I n x A l 1 - x N layer
Chauhan, Prerna, Hasenöhrl, Stanislav, Dobročka, Edmund, Vančo, Ľubomír, Stoklas, Roman, Kováč, Jaroslav, Šiffalovič, Peter, Kuzmík, Ján
Published in Applied surface science (01.03.2019)
Published in Applied surface science (01.03.2019)
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Journal Article
Analysis of the core–shell interface between zinc-blende GaP and wurtzite ZnO
LAURENCIKOVA, Agáta, ELIAS, Peter, HASENÖHRL, Stanislav, KOVAC, Jaroslav, MIKOLASEK, Miroslav, VAVRA, Ivo, NOVAK, Jozef
Published in Solid-state electronics (01.10.2014)
Published in Solid-state electronics (01.10.2014)
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Journal Article
In Sapphire Substrates by MOCVD
Rosová, Alica, Dobročka, Edmund, Eliáš, Peter, Hasenöhrl, Stanislav, Kučera, Michal, Gucmann, Filip, Kuzmík, Ján
Published in Nanomaterials (Basel, Switzerland) (01.10.2022)
Published in Nanomaterials (Basel, Switzerland) (01.10.2022)
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Journal Article
Nanocone structures with limited interspace grown by MOVPE
Novák, Jozef, Eliáš, Peter, Hasenöhrl, Stanislav, Laurenčíková, Agáta, Urbancová, Petra, Pudiš, Dušan
Published in Lithuanian journal of physics (05.01.2020)
Published in Lithuanian journal of physics (05.01.2020)
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Journal Article
Zinc-doped gallium phosphide nanowires for photovoltaic structures
Hasenöhrl, Stanislav, Eliáš, Peter, Šoltýs, Ján, Stoklas, Roman, Dujavová-Laurenčíková, Agáta, Novák, Jozef
Published in Applied surface science (15.03.2013)
Published in Applied surface science (15.03.2013)
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Journal Article
Improvement of GaN crystalline quality by SiN x layer grown by MOVPE
Hospodková, Alice, Slavická Zíková, Markéta, Hubáček, Tomáš, Pangrác, Jiří, Kuldová, Karla, Hájek, František, Dominec, Filip, Vetushka, Aliaksei, Hasenöhrl, Stanislav
Published in Lithuanian journal of physics (05.01.2020)
Published in Lithuanian journal of physics (05.01.2020)
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Journal Article
Invited: Polarization engineering in GaN-based normally-off transistors
Gregusova, Dagmar, Pohorelec, Ondrej, Tapajna, Milan, Blaho, Michal, Gucmann, Filip, Stoklas, Roman, Hasenohrl, Stanislav, Laurencikova, Agata, Sichman, Peter, Hascik, Stefan, Kuzmik, Jan
Published in 2021 IEEE International Meeting for Future Electron Devices, Kansai (IMFEDK) (17.11.2021)
Published in 2021 IEEE International Meeting for Future Electron Devices, Kansai (IMFEDK) (17.11.2021)
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Conference Proceeding
Near-field analysis of GaP nanocones
Pudis, Dusan, Urbancova, Petra, Novak, Jozef, Kuzma, Anton, Lettrichova, Ivana, Goraus, Matej, Elias, Peter, Laurencikova, Agata, Jandura, Daniel, Suslik, Lubos, Hasenohrl, Stanislav
Published in Applied surface science (15.02.2021)
Published in Applied surface science (15.02.2021)
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