Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties
Ťapajna, M., Stoklas, R., Gregušová, D., Gucmann, F., Hušeková, K., Haščík, Š., Fröhlich, K., Tóth, L., Pécz, B., Brunner, F., Kuzmík, J.
Published in Applied surface science (31.12.2017)
Published in Applied surface science (31.12.2017)
Get full text
Journal Article
Self-aligned normally-off metal-oxide-semiconductor n++GaN/InAlN/GaN high electron mobility transistors
Blaho, M., Gregušová, D., Haščík, Š., Jurkovič, M., Ťapajna, M., Fröhlich, K., Dérer, J., Carlin, J. -F., Grandjean, N., Kuzmík, J.
Published in Physica status solidi. A, Applications and materials science (01.05.2015)
Published in Physica status solidi. A, Applications and materials science (01.05.2015)
Get full text
Journal Article
Impact of ZnO gate interfacial layer on piezoelectric response of AlGaN/GaN C-HEMT based ring gate capacitor
Lalinský, T., Vanko, G., Vallo, M., Držík, M., Bruncko, J., Jakovenko, J., Kutiš, V., Rýger, I., Haščík, Š., Husák, M.
Published in Sensors and actuators. A. Physical. (01.12.2011)
Published in Sensors and actuators. A. Physical. (01.12.2011)
Get full text
Journal Article
Patterning of titanium oxide surfaces using inductively coupled plasma for gas sensing
HOTOVY, I, KOSTIC, I, HASCIK, S, REHACEK, V, PREDANOCY, M, BENCUROVA, A
Published in Applied surface science (01.09.2014)
Published in Applied surface science (01.09.2014)
Get full text
Journal Article
Preparation of nickel oxide thin films for gas sensors applications
Hotovy, I, Huran, J, Spiess, L, Hascik, S, Rehacek, V
Published in Sensors and actuators. B, Chemical (07.09.1999)
Published in Sensors and actuators. B, Chemical (07.09.1999)
Get full text
Journal Article
C-V analysis of rapidly thermal annealed SF6 plasma treated AlGaN/GaN heterostructures
OSVALD, J, LALINSKY, T, VANKO, G, HASCIK, S, VINCZE, A
Published in Applied surface science (01.12.2010)
Published in Applied surface science (01.12.2010)
Get full text
Journal Article
ZrO2/(Al)GaN metal–oxide–semiconductor structures: characterization and application
Kuzmík, J, Konstantinidis, G, Harasek, S, Haščík, Š, Bertagnolli, E, Georgakilas, A, Pogany, D
Published in Semiconductor science and technology (01.12.2004)
Published in Semiconductor science and technology (01.12.2004)
Get full text
Journal Article
Gallium arsenide suspended microheater for MEMS sensor arrays
Hotovy, I., Rehacek, V., Mika, F., Lalinsky, T., Hascik, S., Vanko, G., Drzik, M.
Published in Microsystem technologies (01.04.2008)
Published in Microsystem technologies (01.04.2008)
Get full text
Journal Article
Conference Proceeding
CCl4-based reactive ion etching of semi-insulating GaAs and InP
Haščík, Š., Eliáš, P., Šoltýs, J., Martaus, J., Hotový, I.
Published in Czechoslovak journal of physics (01.10.2006)
Published in Czechoslovak journal of physics (01.10.2006)
Get full text
Journal Article
The effect of process parameters and annealing on the properties of Ti/Pt films for miniature temperature sensors
Hotovy, I., Hascik, S., Predanocy, M., Mikolasek, M., Rehacek, V., Kostic, I., Nemec, P., Bencurova, A., Rossberg, D., Spiess, L.
Published in 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) (01.11.2016)
Published in 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) (01.11.2016)
Get full text
Conference Proceeding
Material and electrical properties of N-polar (GaN)/InN surfaces
Cico, K., Adikimenakis, A., Micusik, M., Hascik, S., Georgakilas, A., Kuzmik, J.
Published in The Tenth International Conference on Advanced Semiconductor Devices and Microsystems (01.10.2014)
Published in The Tenth International Conference on Advanced Semiconductor Devices and Microsystems (01.10.2014)
Get full text
Conference Proceeding
Dry etching characteristics of TiO2 thin films using inductively coupled plasma for gas sensing
Hotovy, I., Hascik, S., Gregor, M., Rehacek, V., Predanocy, M., Plecenik, A.
Published in Vacuum (01.09.2014)
Published in Vacuum (01.09.2014)
Get full text
Journal Article
InN/InAlN heterostructures for new generation of fast electronics
Kuzmik, J., Stoklas, R., Hasenöhrl, S., Dobročka, E., Kučera, M., Eliáš, P., Gucmann, F., Gregušová, D., Haščík, Š., Kaleta, A., Chauvat, M. P., Kret, S., Ruterana, P.
Published in Journal of applied physics (28.06.2024)
Published in Journal of applied physics (28.06.2024)
Get full text
Journal Article
Impact of GaN cap on charges in Al2O3/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations
Ťapajna, M., Jurkovič, M., Válik, L., Haščík, Š., Gregušová, D., Brunner, F., Cho, E.-M., Hashizume, T., Kuzmík, J.
Published in Journal of applied physics (14.09.2014)
Published in Journal of applied physics (14.09.2014)
Get full text
Journal Article
InN: Breaking the limits of solid-state electronics
Kuzmík, J., Adikimenakis, A., Ťapajna, M., Gregušová, D., Haščík, Š., Dobročka, E., Tsagaraki, K., Stoklas, R., Georgakilas, A.
Published in AIP advances (01.12.2021)
Published in AIP advances (01.12.2021)
Get full text
Journal Article
Dry etching characteristics of TiO sub(2) thin films using inductively coupled plasma for gas sensing
Hotovy, I, Hascik, S, Gregor, M, Rehacek, V, Predanocy, M, Plecenik, A
Published in Vacuum (01.09.2014)
Published in Vacuum (01.09.2014)
Get full text
Journal Article