High-Etching-Selectivity Barrier SiC ($k<3.5$) Film for 32-nm-Node Copper/Low-$k$ Interconnects
Nakahira, Junya, Nagano, Shuji, Gawase, Akifumi, Ohashi, Yoshi, Shimizu, Hideharu, Chikaki, Shinichi, Oda, Noriaki, Kondo, Seiichi, Hasaka, Satoshi, Saito, Shuichi
Published in Japanese Journal of Applied Physics (01.05.2010)
Published in Japanese Journal of Applied Physics (01.05.2010)
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Journal Article
Multiwafer atmospheric-pressure MOVPE reactor for nitride semiconductors and ex-situ dry cleaning of reactor components using chlorine gas for stable operation
Tokunaga, Hiroki, Fukuda, Yasushi, Ubukata, Akinori, Ikenaga, Kazutada, Inaishi, Yoshiaki, Orita, Takashi, Hasaka, Satoshi, Kitamura, Yuichiro, Yamaguchi, Akira, Koseki, Shuichi, Uematsu, Kunimasa, Tomita, Nobuyasu, Akutsu, Nakao, Matsumoto, Koh
Published in Physica status solidi. C (01.07.2008)
Published in Physica status solidi. C (01.07.2008)
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Gas phase particle formation and elimination on Si (100) in low temperature reduced pressure chemical vapor deposition silicon-based epitaxial layers
Shinriki, Manabu, Chung, Keith, Hasaka, Satoshi, Brabant, Paul, He, Hong, Adam, Thomas N., Sadana, Devendra
Published in Thin solid films (01.02.2012)
Published in Thin solid films (01.02.2012)
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Conference Proceeding
High strain embedded-SiGe via low temperature reduced pressure chemical vapor deposition
He, Hong, Brabant, Paul, Chung, Keith, Shinriki, Manabu, Adam, Thomas, Reznicek, Alexander, Sadana, Devendra, Hasaka, Satoshi, Francis, Terry
Published in Thin solid films (01.02.2012)
Published in Thin solid films (01.02.2012)
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Journal Article
Conference Proceeding
Proposal of New Precursors for Plasma-Enhanced Chemical Vapor Deposition of SiOCH Low-$k$ Films with Plasma Damage Resistance
Ohashi, Yoshi, Tajima, Nobuo, Xu, Yonghua, Kada, Takeshi, Nagano, Shuji, Shimizu, Hideharu, Hasaka, Satoshi
Published in Japanese Journal of Applied Physics (01.05.2010)
Published in Japanese Journal of Applied Physics (01.05.2010)
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Journal Article
Gas Source Depletion Study of High-Order Silanes of Silicon-Based Epitaxial Layers Grown with RPCVD and Low Temperatures
Chung, Keith H., Brabant, Paul, Shinriki, Manabu, Hasaka, Satoshi, Francis, Terry, He, Hong, Sadana, Devendra K.
Published in ECS transactions (27.04.2012)
Published in ECS transactions (27.04.2012)
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Journal Article
Novel Precursor for Development of Si–C 2 H 4 –Si Networks in SiCH for Application as a Low-k Cap Layer beyond 22 nm Nodes
Shimizu, Hideharu, Tajima, Nobuo, Kada, Takeshi, Nagano, Shuji, Ohashi, Yoshi, Hasaka, Satoshi
Published in Japanese Journal of Applied Physics (01.05.2010)
Published in Japanese Journal of Applied Physics (01.05.2010)
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Journal Article
Ex situ dry cleaning of reactor component of nitride metal organic chemical vapor deposition using chlorinated gases
Fukuda, Yasushi, Orita, Takashi, Akutsu, Nakao, Ikenaga, Kazutada, Koseki, Syuuichi, Matsumoto, Koh, Hasaka, Satoshi
Published in Journal of crystal growth (2007)
Published in Journal of crystal growth (2007)
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Conference Proceeding
THIN FILMS AND METHODS OF MAKING THEM USING CYCLOHEXASILANE
TORRES ROBERT JR, HASAKA SATOSHI, FRANCIS TERRY ARTHUR, BRABANT PAUL DAVID
Year of Publication 02.05.2013
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Year of Publication 02.05.2013
Patent
Carbon-Doped Silicon Oxide Films with Hydrocarbon Network Bonds for Low-k Dielectrics: Theoretical Investigations
Tajima, Nobuo, Ohno, Takahisa, Hamada, Tomoyuki, Yoneda, Katsumi, Kondo, Seiichi, Kobayashi, Nobuyoshi, Shinriki, Manabu, Inaishi, Yoshiaki, Miyazawa, Kazuhiro, Sakota, Kaoru, Hasaka, Satoshi, Inoue, Minoru
Published in Japanese Journal of Applied Physics (01.09.2007)
Published in Japanese Journal of Applied Physics (01.09.2007)
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