The growth and characterization of AlGaAs using dimethyl aluminum hydride
Bhat, R., Koza, M.A., Chang, C.C., Schwarz, S.A., Harris, T.D.
Published in Journal of crystal growth (01.09.1986)
Published in Journal of crystal growth (01.09.1986)
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Journal Article
Dimensions of luminescent oxidized and porous silicon structures
Schuppler, S, Friedman, SL, Marcus, MA, Adler, DL, Xie, Y, Ross, FM, Harris, TD, Brown, WL, Chabal, YJ, Brus, LE, Citrin, PH
Published in Physical review letters (18.04.1994)
Published in Physical review letters (18.04.1994)
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Journal Article
Insulator passivation of In/sub 0.2/Ga/sub 0.8/As-GaAs surface quantum wells
Passlack, M., Hong, M., Harris, T.D., Mannaerts, J.P., Vakhshoori, D., Schnoes, M.L.
Published in IEEE journal of quantum electronics (01.02.1998)
Published in IEEE journal of quantum electronics (01.02.1998)
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Journal Article
A Ga 2O 3 passivation technique compatible with GaAs device processing
Hong, M, Passlack, M, Mannaerts, J.P, Harris, T.D, Schnoes, M.L, Opila, R.L, Krautter, H.W
Published in Solid-state electronics (1997)
Published in Solid-state electronics (1997)
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Journal Article
Far- and near-field optical spectroscopy of cleaved edge quantum wires
Katz, M., Gershoni, D., Harris, T.D., Pfeiffer, L.N.
Published in Journal of luminescence (01.06.1997)
Published in Journal of luminescence (01.06.1997)
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Journal Article
A Ga2O3 passivation technique compatible with GaAs device processing
Hong, M, Passlack, M, Mannaerts, J.P, Harris, T.D, Schnoes, M.L, Opila, R.L, Krautter, H.W
Published in Solid-state electronics (01.04.1997)
Published in Solid-state electronics (01.04.1997)
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Journal Article
Variation of background impurities in Al xGa 1−xAs (0.3 ≤ χ ≤ 0.4) with growth temperature: implications for device leakage current and surface/heterointerface roughness
Chand, Naresh, Harris, T.D., Chu, S.N.G., Becker, E.E., Sergent, A.M., Schnoes, M., Lang, D.V.
Published in Journal of crystal growth (1991)
Published in Journal of crystal growth (1991)
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Journal Article