Physical evidence of meminductance in a passive, two-terminal circuit element
Dinavahi, Abhiram, Yamamoto, Alexandre, Harris, H. Rusty
Published in Scientific reports (01.02.2023)
Published in Scientific reports (01.02.2023)
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Journal Article
Decoupling the Fermi-level pinning effect and intrinsic limitations on p-type effective work function metal electrodes
Wen, Huang-Chun, Majhi, Prashant, Choi, Kisik, Park, C.S., Alshareef, Husam N., Rusty Harris, H., Luan, Hongfa, Niimi, Hiro, Park, Hong-Bae, Bersuker, Gennadi, Lysaght, Patrick S., Kwong, Dim-Lee, Song, S.C., Lee, Byoung Hun, Jammy, Raj
Published in Microelectronic engineering (2008)
Published in Microelectronic engineering (2008)
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Journal Article
Simulation of a Multidimensional Input Quantum Perceptron
Yamamoto, Alexandre Y., Sundqvist, Kyle M., Li, Peng, Harris, H. Rusty
Published in Quantum information processing (01.06.2018)
Published in Quantum information processing (01.06.2018)
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Journal Article
On Oxygen Deficiency and Fast Transient Charge-Trapping Effects in High- k Dielectrics
Huang-Chun Wen, Harris, H.R., Young, C.D., Hongfa Luan, Alshareef, H.N., Kisik Choi, Dim-Lee Kwong, Majhi, P., Bersuker, G., Byoung Hun Lee
Published in IEEE electron device letters (01.12.2006)
Published in IEEE electron device letters (01.12.2006)
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Journal Article
Threshold Voltage Shift Due to Charge Trapping in Dielectric-Gated AlGaN/GaN High Electron Mobility Transistors Examined in Au-Free Technology
Johnson, Derek W., Lee, Rinus T. P., Hill, Richard J. W., Man Hoi Wong, Bersuker, Gennadi, Piner, Edwin L., Kirsch, Paul D., Harris, H. Rusty
Published in IEEE transactions on electron devices (01.10.2013)
Published in IEEE transactions on electron devices (01.10.2013)
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Journal Article
Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High- k/Metal Gate Stacks Directly on SiGe
Huang, J., Kirsch, P.D., Jungwoo Oh, Se Hoon Lee, Majhi, P., Harris, H.R., Gilmer, D.C., Bersuker, G., Dawei Heh, Chang Seo Park, Park, C., Hsing-Huang Tseng, Jammy, R.
Published in IEEE electron device letters (01.03.2009)
Published in IEEE electron device letters (01.03.2009)
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Journal Article
Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High-k/Metal Gates CMOS FinFETs for Multi-VTh Engineering
MUHAMMAD MUSTAFA HUSSAIN, SMITH, Casey E, RUSTY HARRIS, H, YOUNG, Chadwin D, TSENG, Hsing-Huang, JAMMY, Rajarao
Published in IEEE transactions on electron devices (01.03.2010)
Published in IEEE transactions on electron devices (01.03.2010)
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Journal Article
Characterization of ALD Beryllium Oxide as a Potential High-k Gate Dielectric for Low-Leakage AlGaN/GaN MOSHEMTs
Johnson, Derek W., Yum, Jung Hwan, Hudnall, Todd W., Mushinski, Ryan M., Bielawski, Christopher W., Roberts, John C., Wang, Wei-E, Banerjee, Sanjay K., Harris, H. Rusty
Published in Journal of electronic materials (2014)
Published in Journal of electronic materials (2014)
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Journal Article
A Simplified Superior Floating-Body/Gate DRAM Cell
Zhichao Lu, Fossum, J.G., Ji-Woon Yang, Harris, H.R., Trivedi, V.P., Min Chu, Thompson, S.E.
Published in IEEE electron device letters (01.03.2009)
Published in IEEE electron device letters (01.03.2009)
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Journal Article
Toward single electron resolution phonon mediated ionization detectors
Mirabolfathi, Nader, Harris, H. Rusty, Mahapatra, Rupak, Sundqvist, Kyle, Jastram, Andrew, Serfass, Bruno, Faiez, Dana, Sadoulet, Bernard
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (21.05.2017)
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (21.05.2017)
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Journal Article
Toward single electron resolution phonon mediated ionization detectors
Mirabolfathi, Nader, Harris, H. Rusty, Mahapatra, Rupak, Sundqvist, Kyle, Jastram, Andrew, Serfass, Bruno, Faiez, Dana, Sadoulet, Bernard
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (14.02.2017)
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Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (14.02.2017)
Journal Article
Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High- k /Metal Gates CMOS FinFETs for Multi- V Th Engineering
Hussain, Muhammad Mustafa, Smith, Casey E, Harris, HRusty, Young, Chadwin D, Tseng, Hsing-Huang, Jammy, Rajarao
Published in IEEE transactions on electron devices (01.03.2010)
Published in IEEE transactions on electron devices (01.03.2010)
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Journal Article
Self-aligned contact metallization to AlGaN/GaN heterostructures
Johnson, Derek, Babb, Michael, Ravikirthi, Pradhyumna, Jae Woo Suh, Harris, H. Rusty
Published in 2017 75th Annual Device Research Conference (DRC) (01.06.2017)
Published in 2017 75th Annual Device Research Conference (DRC) (01.06.2017)
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Conference Proceeding
Threshold Voltage Shift Due to Charge Trapping in Dielectric-Gated AlGaN/GaN High Electron Mobility Transistors Examined in Au-Free Technology : GaN ELECTRONIC DEVICES
JOHNSON, Derek W, LEE, Rinus T. P, HILL, Richard J. W, MAN HOI WONG, BERSUKER, Gennadi, PINER, Edwin L, KIRSCH, Paul D, HARRIS, H. Rusty
Published in IEEE transactions on electron devices (2013)
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Published in IEEE transactions on electron devices (2013)
Journal Article
Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High-[Formula Omitted]/Metal Gates CMOS FinFETs for Multi- [Formula Omitted] Engineering
Hussain, Muhammad Mustafa, Smith, Casey E, Harris, H. Rusty, Young, Chadwin D, Tseng, Hsing-Huang, Jammy, Rajarao
Published in IEEE transactions on electron devices (01.03.2010)
Published in IEEE transactions on electron devices (01.03.2010)
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Journal Article
Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High-k/Metal Gates CMOS FinFETs for Multi- V rmTh Engineering
Hussain, Muhammad Mustafa, Smith, Casey E, Harris, H Rusty, Young, Chadwin D, Tseng, Hsing-Huang, Jammy, Rajarao
Published in IEEE transactions on electron devices (01.03.2010)
Published in IEEE transactions on electron devices (01.03.2010)
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Journal Article
Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High- k/Metal Gates CMOS FinFETs for Multi- V Engineering
Hussain, M.M., Smith, C.E., Harris, H.R., Young, C.D., Hsing-Huang Tseng, Jammy, R.
Published in IEEE transactions on electron devices (01.03.2010)
Published in IEEE transactions on electron devices (01.03.2010)
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Journal Article
High Performing pMOSFETs on Si(110) for Application to Hybrid Orientation Technologies -- Comparison of HfO2 and HfSiON
Krishnan, S.A., Rusty Harris, H., Kirsch, P.D., Krug, C., Quevedo-Lopez, C., Young, C., Byoung Hun Lee, Choi, R., Chowdhury, N., Suthram, S., Thompson, S., Bersuker, G., Jammy, R.
Published in 2006 International Electron Devices Meeting (01.12.2006)
Published in 2006 International Electron Devices Meeting (01.12.2006)
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Conference Proceeding
Characterization of ALD Beryllium Oxide as a Potential High-k Gate Dielectric for Low-Leakage AlGaN/GaN MOSHEMTs : ADVANCED MATERIALS FOR POWER ELECTRONICS AND POWER CONDITIONING SYSTEMS
JOHNSON, Derek W, JUNG HWAN YUM, HUDNALL, Todd W, MUSHINSKI, Ryan M, BIELAWSKI, Christopher W, ROBERTS, John C, WANG, Wei-E, BANERJEE, Sanjay K, HARRIS, H. Rusty
Published in Journal of electronic materials (2014)
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Published in Journal of electronic materials (2014)
Conference Proceeding