Search Results - "Harame, David L" :: K.UTB vyhledávací portál

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BIPOLAR TRANSISTOR WITH EXTRINSIC BASE REGION AND METHODS OF FABRICATION

by KERBAUGH MICHAEL L, HARAME DAVID L, ADKISSON JAMES W, PEKARIK JOHN J, LIU QIZHI
Year of Publication 30.06.2016

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Power sige heterojunction bipolar transistor (HBT) with improved drive current by strain compensation

by ADAM THOMAS N, REZNICEK ALEXANDER, HARAME DAVID L, LIU QIZHI
Year of Publication 20.05.2014

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Method of forming a bipolar transistor with maskless self-aligned emitter

by HARAME DAVID L, KAUSHAL VIKAS K, KHATER MARWAN H, LIU QIZHI
Year of Publication 31.05.2016

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Transistor structure with a sidewall-defined intrinsic base to extrinsic base link-up region and method of forming the transistor

by HERRIN RUSSELL T, HARAME DAVID L, LIU QIZHI
Year of Publication 18.03.2014

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PROFILE CONTROL OVER A COLLECTOR OF A BIPOLAR JUNCTION TRANSISTOR

by CAMILLO-CASTILLO RENATA, HARAME DAVID L, KAUSHAL VIKAS K, JAIN VIBHOR, KHATER MARWAN H
Year of Publication 14.04.2016

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Bipolar transistor with extrinsic base region and methods of fabrication

by KERBAUGH MICHAEL L, HARAME DAVID L, ADKISSON JAMES W, PEKARIK JOHN J, LIU QIZHI
Year of Publication 12.04.2016

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LOCAL WIRING FOR A BIPOLAR JUNCTION TRANSISTOR INCLUDING A SELF-ALIGNED EMITTER REGION

by HARAME DAVID L, HE ZHONG-XIANG, LIU QIZHI
Year of Publication 23.01.2014

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INTEGRATED SEMICONDUCTOR DEVICES WITH SINGLE CRYSTALLINE BEAM, METHODS OF MANUFACTURE AND DESIGN STRUCTURE

by STAMPER ANTHONY K, HARAME DAVID L, LUCE STEPHEN E
Year of Publication 09.01.2014

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BIPOLAR JUNCTION TRANSISTORS WITH REDUCED EPITAXIAL BASE FACETS EFFECT FOR LOW PARASITIC COLLECTOR-BASE CAPACITANCE

by CAMILLO-CASTILLO RENATA, HARAME DAVID L, KAUSHAL VIKAS K, JAIN VIBHOR, KHATER MARWAN H
Year of Publication 18.02.2016

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Self-aligned emitter-base bipolar junction transistor with reduced base resistance and base-collector capacitance

by Harame David L, Machia Keith J, Alperstein Deborah A, Liu Qizhi, Willets Christa R, Joseph Alvin J
Year of Publication 14.02.2017

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Profile control over a collector of a bipolar junction transistor

by CAMILLO-CASTILLO RENATA, HARAME DAVID L, KAUSHAL VIKAS K, JAIN VIBHOR, KHATER MARWAN H
Year of Publication 26.01.2016

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Junction field-effect transistor with raised source and drain regions formed by selective epitaxy

by ELLIS-MONAGHAN JOHN J, CHAN KEVIN K, HARAME DAVID L, PEKARIK JOHN J, LIU QIZHI
Year of Publication 12.01.2016

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Methods of fabricating bipolar junction transistors with reduced epitaxial base facets effect for low parasitic collector-base capacitance

by CAMILLO-CASTILLO RENATA, HARAME DAVID L, KAUSHAL VIKAS K, JAIN VIBHOR, KHATER MARWAN H
Year of Publication 22.12.2015

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BIPOLAR JUNCTION TRANSISTORS WITH REDUCED BASE-COLLECTOR JUNCTION CAPACITANCE

by CHENG PENG, HARAME DAVID L, LEIDY ROBERT K, LIU QIZHI
Year of Publication 24.10.2013

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BIPOLAR JUNCTION TRANSISTORS WITH REDUCED BASE-COLLECTOR JUNCTION CAPACITANCE

by CHENG, PENG, HARAME, DAVID, L, LIU, QIZHI, LEIDY, ROBERT, K
Year of Publication 24.10.2013

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BIPOLAR TRANSISTOR WITH EXTRINSIC BASE REGION AND METHODS OF FABRICATION

by KERBAUGH MICHAEL L, HARAME DAVID L, ADKISSON JAMES W, PEKARIK JOHN J, LIU QIZHI
Year of Publication 10.12.2015

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Method to bridge extrinsic and intrinsic base by selective epitaxy in BiCMOS technology

by CHAN KEVIN K, HARAME DAVID L, ADKISSON JAMES W, PEKARIK JOHN J, LIU QIZHI
Year of Publication 01.12.2015

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Methods of manufacturing integrated semiconductor devices with single crystalline beam

by STAMPER ANTHONY K, HARAME DAVID L, LUCE STEPHEN E
Year of Publication 01.10.2013

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An 11 GHz 3-V SiGe voltage controlled oscillator with integrated resonator

by Soyuer, M., Burghartz, J.N., Ainspan, H.A., Jenkins, K.A., Xiao, P., Shahani, A.R., Dolan, M.S., Harame, D.L.
Published in IEEE journal of solid-state circuits (01.09.1997)

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TRANSISTOR HAVING A NARROW IN-SUBSTRATE COLLECTOR REGION FOR REDUCED BASE-COLLECTOR JUNCTION CAPACITANCE AND A METHOD OF FORMING THE TRANSISTOR

by HARAME DAVID L, ADKISSON JAMES W, LIU QIZHI
Year of Publication 22.08.2013

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Patent

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