Modeling of single-event effects in circuit-hardened high-speed SiGe HBT logic
Niu, G., Krithivasan, R., Cressler, J.D., Marshall, P., Marshall, C., Reed, R., Harame, D.L.
Published in IEEE transactions on nuclear science (01.12.2001)
Published in IEEE transactions on nuclear science (01.12.2001)
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75-GHz fT SiGe-base heterojunction bipolar transistors
PATTON, G. L, COMFORT, J. H, MEYERSON, B. S, CRABBE, E. F, SCILLA, G. J, DE FRESART, E, STORK, J. M. C, SUN, J. Y.-C, HARAME, D. L, BURGHARTZ, J. N
Published in IEEE electron device letters (01.04.1990)
Published in IEEE electron device letters (01.04.1990)
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Heterojunction bipolar transistors using Si-Ge alloys
Iyer, S.S., Patton, G.L., Stork, J.M.C., Meyerson, B.S., Harame, D.L.
Published in IEEE transactions on electron devices (01.10.1989)
Published in IEEE transactions on electron devices (01.10.1989)
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Low-frequency noise in UHV/CVD epitaxial Si and SiGe bipolar transistors
Vempati, L.S., Cressler, J.D., Babcock, J.A., Jaeger, R.C., Harame, D.L.
Published in IEEE journal of solid-state circuits (01.10.1996)
Published in IEEE journal of solid-state circuits (01.10.1996)
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Modeling and characterization of SiGe HBT low-frequency noise figures-of-merit for RFIC applications
Jin Tang, Guofu Niu, Zhenrong Jin, Cressler, J.D., Shiming Zhang, Joseph, A.J., Harame, D.L.
Published in IEEE transactions on microwave theory and techniques (01.11.2002)
Published in IEEE transactions on microwave theory and techniques (01.11.2002)
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Noise modeling and SiGe profile design tradeoffs for RF applications [HBTs]
Guofu Niu, Shiming Zhang, Cressler, J.D., Joseph, A.J., Fairbanks, J.S., Larson, L.E., Webster, C.S., Ansley, W.E., Harame, D.L.
Published in IEEE transactions on electron devices (01.11.2000)
Published in IEEE transactions on electron devices (01.11.2000)
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1/f noise in proton-irradiated SiGe HBTs
Zhenrong Jin, Guofu Niu, Cressler, J.D., Marshall, C.J., Marshall, P.W., Kim, H.S., Reed, R.A., Harame, D.L.
Published in IEEE transactions on nuclear science (01.12.2001)
Published in IEEE transactions on nuclear science (01.12.2001)
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A physics-based high-injection transit-time model applied to barrier effects in SiGe HBTs
Qingqing Liang, Cressler, J.D., Guofu Niu, Malladi, R.M., Newton, K., Harame, D.L.
Published in IEEE transactions on electron devices (01.10.2002)
Published in IEEE transactions on electron devices (01.10.2002)
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Proton radiation response of SiGe HBT analog and RF circuits and passives
Cressler, J.D., Hamilton, M.C., Krithivasan, R., Ainspan, H., Groves, R., Guofu Niu, Shiming Zhang, Zhenrong Jin, Marshall, C.J., Marshall, P.W., Kim, H.S., Reed, R.A., Palmer, M.J., Joseph, A.J., Harame, D.L.
Published in IEEE transactions on nuclear science (01.12.2001)
Published in IEEE transactions on nuclear science (01.12.2001)
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