Cryogenic Characterization of 22-nm FDSOI CMOS Technology for Quantum Computing ICs
Bonen, S., Alakusu, U., Duan, Y., Gong, M. J., Dadash, M. S., Lucci, L., Daughton, D. R., Adam, G. C., Iordanescu, S., Pasteanu, M., Giangu, I., Jia, H., Gutierrez, L. E., Chen, W. T., Messaoudi, N., Harame, D., Muller, A., Mansour, R. R., Asbeck, P., Voinigescu, S. P.
Published in IEEE electron device letters (01.01.2019)
Published in IEEE electron device letters (01.01.2019)
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Journal Article
Cryogenic Characterization of 22nm FDSOI CMOS Technology for Quantum Computing ICs
Bonen, S., Alakusu, U., Duan, Y., Gong, M. J., Dadash, M. S., Lucci, L., Daughton, D. R., Adam, G. C., Iordanescu, S., Pasteanu, M., Giangu, I., Jia, H., Gutierrez, L. E., Chen, W. T., Messaoudi, N., Harame, D., Muller, A., Mansour, R. R., Asbeck, P., Voinigescu, S. P.
Published in IEEE electron device letters (2018)
Published in IEEE electron device letters (2018)
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Journal Article
A 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applications
Pekarik, John J., Adkisson, J., Gray, P., Liu, Q., Camillo-Castillo, R., Khater, M., Jain, V., Zetterlund, B., DiVergilio, A., Tian, X., Vallett, A., Ellis-Monaghan, J., Gross, B. J., Cheng, P., Kaushal, V., He, Z., Lukaitis, J., Newton, K., Kerbaugh, M., Cahoon, N., Vera, L., Zhao, Y., Long, J. R., Valdes-Garcia, A., Reynolds, S., Lee, W., Sadhu, B., Harame, D.
Published in 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) (01.09.2014)
Published in 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) (01.09.2014)
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Conference Proceeding
The revolution in SiGe: impact on device electronics
Harame, D.L, Koester, S.J, Freeman, G, Cottrel, P, Rim, K, Dehlinger, G, Ahlgren, D, Dunn, J.S, Greenberg, D, Joseph, A, Anderson, F, Rieh, J.-S, Onge, S.A.S.T, Coolbaugh, D, Ramachandran, V, Cressler, J.D, Subbanna, S
Published in Applied surface science (15.03.2004)
Published in Applied surface science (15.03.2004)
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Conference Proceeding
A unified approach to RF and microwave noise parameter modeling in bipolar transistors
Niu, G., Cressler, J.D., Shiming Zhang, Ansley, W.E., Webster, C.S., Harame, D.L.
Published in IEEE transactions on electron devices (01.11.2001)
Published in IEEE transactions on electron devices (01.11.2001)
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Journal Article
SiGe heterojunction bipolar transistors and circuits toward terahertz communication applications
Jae-Sung Rieh, Jagannathan, B., Greenberg, D.R., Meghelli, M., Rylyakov, A., Guarin, F., Zhijian Yang, Ahlgren, D.C., Freeman, G., Cottrell, P., Harame, D.
Published in IEEE transactions on microwave theory and techniques (01.10.2004)
Published in IEEE transactions on microwave theory and techniques (01.10.2004)
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Journal Article
Current status and future trends of SiGe BiCMOS technology
Harame, D.L., Ahlgren, D.C., Coolbaugh, D.D., Dunn, J.S., Freeman, G.G., Gillis, J.D., Groves, R.A., Hendersen, G.N., Johnson, R.A., Joseph, A.J., Subbanna, S., Victor, A.M., Watson, K.M., Webster, C.S., Zampardi, P.J.
Published in IEEE transactions on electron devices (01.11.2001)
Published in IEEE transactions on electron devices (01.11.2001)
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Journal Article
90nm SiGe BiCMOS analog front-end circuits for 80GHz bandwidth large-swing transmitters
Hoffman, J., Gosse, J. R., Shopov, S., Voinigescu, S. P., Pekarik, J. J., Camillo-Castillo, R., Jain, V., Harame, D.
Published in 2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM (01.10.2015)
Published in 2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM (01.10.2015)
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Conference Proceeding
Si/SiGe epitaxial-base transistors - Part I: Materials, physics, and circuits
Harame, D L, Comfort, J H, Cressler, J D, Crabbe, E F, Sun, J Y-C, Meyerson, B S, Tice, T
Published in IEEE transactions on electron devices (01.01.1995)
Published in IEEE transactions on electron devices (01.01.1995)
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Journal Article
RF linearity characteristics of SiGe HBTs
Guofu Niu, Qingqing Liang, Cressler, J.D., Webster, C.S., Harame, D.L.
Published in IEEE transactions on microwave theory and techniques (01.09.2001)
Published in IEEE transactions on microwave theory and techniques (01.09.2001)
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Journal Article
Si/SiGe epitaxial-base transistors - Part II: Process integration and analog applications
Harame, D L, Comfort, J H, Cressler, J D, Crabbe, E F, Sun, J Y-C, Meyerson, B S, Tice, T
Published in IEEE transactions on electron devices (01.01.1995)
Published in IEEE transactions on electron devices (01.01.1995)
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Journal Article
SiGe-channel heterojunction p-MOSFET's
Verdonckt-Vandebroek, S., Crabbe, E.F., Meyerson, B.S., Harame, D.L., Restle, P.J., Stork, J.M.C., Johnson, J.B.
Published in IEEE transactions on electron devices (01.01.1994)
Published in IEEE transactions on electron devices (01.01.1994)
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Journal Article
A 120V 180nm High Voltage CMOS smart power technology for system-on-chip integration
Minixhofer, R, Feilchenfeld, N, Knaipp, M, Röhrer, G, Park, J M, Zierak, M, Enichlmair, H, Levy, M, Loeffler, B, Hershberger, D, Unterleitner, F, Gautsch, M, Chatty, K, Shi, Y, Posch, W, Seebacher, E, Schrems, M, Dunn, J, Harame, D
Published in 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.06.2010)
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Published in 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.06.2010)
Conference Proceeding
Technology Computer-Aided Design (TCAD) Feasibility Study of Scaling SiGe HBTs
Camillo-Castillo, Renata, Stricker, Andreas, Johnson, Jeffrey B., Appaswarmy, Aravind, Malladi, Ramana, Joseph, Alvin, Harame, D.
Published in ECS transactions (01.01.2010)
Published in ECS transactions (01.01.2010)
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Journal Article
A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design
Voinigescu, S.P., Maliepaard, M.C., Showell, J.L., Babcock, G.E., Marchesan, D., Schroter, M., Schvan, P., Harame, D.L.
Published in IEEE journal of solid-state circuits (01.09.1997)
Published in IEEE journal of solid-state circuits (01.09.1997)
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Journal Article
Transistor noise in SiGe HBT RF technology
Niu, G., Jin, Z., Cressler, J.D., Rapeta, R., Joseph, A.J., Harame, D.
Published in IEEE journal of solid-state circuits (01.09.2001)
Published in IEEE journal of solid-state circuits (01.09.2001)
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Journal Article
Microwave transformers, inductors and transmission lines implemented in an Si/SiGe HBT process
Laney, D.C., Larson, L.E., Chan, P., Malinowski, J., Harame, D., Subbanna, S., Volant, R., Case, M.
Published in IEEE transactions on microwave theory and techniques (01.08.2001)
Published in IEEE transactions on microwave theory and techniques (01.08.2001)
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Journal Article
High performance BiCMOS process integration: trends, issues, and future directions
Harame, D.
Published in Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting (1997)
Published in Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting (1997)
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Conference Proceeding
Ion-sensing devices with silicon nitride and borosilicate glass insulators
Harame, D.L., Bousse, L.J., Shott, J.D., Meindl, J.D.
Published in IEEE transactions on electron devices (01.08.1987)
Published in IEEE transactions on electron devices (01.08.1987)
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