150mm Silicon carbide selective embedded epitaxial growth technology by CVD
Hara, Kazukuni, Fujibayashi, Hiroaki, Takeuchi, Yuuichi, Omae, Shoichiro
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
Get full text
Conference Proceeding
Journal Article
Demonstration of recycling process for GaN substrates using laser slicing technique towards cost reduction of GaN vertical power MOSFETs
Ishida, Takashi, Ushijima, Takashi, Nakabayashi, Shosuke, Kato, Kozo, Koyama, Takayuki, Nagasato, Yoshitaka, Ohara, Junji, Hoshi, Shinichi, Nagaya, Masatake, Hara, Kazukuni, Kanemura, Takashi, Taki, Masato, Yui, Toshiki, Hara, Keisuke, Kawaguchi, Daisuke, Kuno, Koji, Osajima, Tetsuya, Kojima, Jun, Uesugi, Tsutomu, Tanaka, Atsushi, Sasaoka, Chiaki, Onda, Shoichi, Suda, Jun
Published in Applied physics express (01.02.2024)
Published in Applied physics express (01.02.2024)
Get full text
Journal Article
Detection of edge component of threading dislocations in GaN by Raman spectroscopy
Kokubo, Nobuhiko, Tsunooka, Yosuke, Fujie, Fumihiro, Ohara, Junji, Hara, Kazukuni, Onda, Shoichi, Yamada, Hisashi, Shimizu, Mitsuaki, Harada, Shunta, Tagawa, Miho, Ujihara, Toru
Published in Applied physics express (01.06.2018)
Published in Applied physics express (01.06.2018)
Get full text
Journal Article
Stable and high-speed SiC bulk growth without dendrites by the HTCVD method
Tokuda, Yuichiro, Makino, Emi, Sugiyama, Naohiro, Kamata, Isaho, Hoshino, Norihiro, Kojima, Jun, Hara, Kazukuni, Tsuchida, Hidekazu
Published in Journal of crystal growth (15.08.2016)
Published in Journal of crystal growth (15.08.2016)
Get full text
Journal Article
Analysis and Reduction of Stacking Faults in Fast Epitaxial Growth
Fujibayashi, Hiroaki, Hara, Kazukuni, Ito, Masahiko, Osawa, Hitoshi, Naitou, Masami, Fukada, Keisuke, Uehigashi, Hideyuki, Kamata, Isaho, Tsuchida, Hidekazu, Kozawa, Takahiro
Published in Materials Science Forum (24.05.2016)
Published in Materials Science Forum (24.05.2016)
Get full text
Journal Article
Suppression of cluster formation in GaN growth by tri-halide vapor phase epitaxy with external GaCl3 gas supply system
Hara, Kazukuni, Yamamoto, Eizou, Kozawa, Motoi, Uematsu, Daisuke, Ohara, Junji, Mukaiyama, Yuji, Kojima, Jun, Onda, Shoichi, Suda, Jun
Published in Japanese Journal of Applied Physics (01.07.2022)
Published in Japanese Journal of Applied Physics (01.07.2022)
Get full text
Journal Article
Suppression of cluster formation in GaN growth by tri-halide vapor phase epitaxy with external GaCl 3 gas supply system
Hara, Kazukuni, Yamamoto, Eizou, Kozawa, Motoi, Uematsu, Daisuke, Ohara, Junji, Mukaiyama, Yuji, Kojima, Jun, Onda, Shoichi, Suda, Jun
Published in Japanese Journal of Applied Physics (01.07.2022)
Published in Japanese Journal of Applied Physics (01.07.2022)
Get full text
Journal Article
GaN epitaxial growth on 4 degree off-axis Si- and C-face 4H-SiC without buffer layers by tri-halide vapor-phase epitaxy with high-speed wafer rotation
Hara, Kazukuni, Takaki, Shigeyuki, Tanishita, Shinichi, Uematsu, Daisuke, Hoshino, Yuto, Otake, Nobuyuki, Ohara, Junji, Onda, Shoichi
Published in Japanese Journal of Applied Physics (01.06.2019)
Published in Japanese Journal of Applied Physics (01.06.2019)
Get full text
Journal Article
3D Raman Spectroscopy Investigation of Defects in 4H-SiC Epilayer
Takeuchi, Yuuichi, Akiba, Atsuya, Milikofu, Olga, Kozu, Tomomi, Hara, Kazukuni, Naito, Masami, Fujibayashi, Hiroaki
Published in Materials science forum (30.06.2015)
Published in Materials science forum (30.06.2015)
Get full text
Journal Article
3D Raman Spectroscopy Investigation of Defects in 4H-SiC Epilayer
Hara, Kazukuni, Naito, Masami, Fujibayashi, Hiroaki, Akiba, Atsuya, Takeuchi, Yuuichi, Milikofu, Olga, Kozu, Tomomi
Published in Materials science forum (01.06.2015)
Published in Materials science forum (01.06.2015)
Get full text
Journal Article
Advances in Fast Epitaxial Growth of 4H-SiC and Defect Reduction
Fukada, Keisuke, Ito, Masahiko, Miyazawa, Tetsuya, Fujibayashi, Hiroaki, Osawa, Hitoshi, Uehigashi, Hideyuki, Tsuchida, Hidekazu, Kamata, Isaho, Hara, Kazukuni, Sugiura, Toshikazu, Kozawa, Takahiro, Naitou, Masami
Published in Materials Science Forum (24.05.2016)
Published in Materials Science Forum (24.05.2016)
Get full text
Journal Article
Development of a 150 mm 4H-SiC epitaxial reactor with high-speed wafer rotation
Fujibayashi, Hiroaki, Ito, Masahiko, Ito, Hideki, Kamata, Isaho, Naito, Masami, Hara, Kazukuni, Yamauchi, Shoichi, Suzuki, Kunihiko, Yajima, Masayoshi, Mitani, Shinichi, Suzuki, Katsumi, Aoki, Hirofumi, Nishikawa, Koichi, Kozawa, Takahiro, Tsuchida, Hidekazu
Published in Applied physics express (01.01.2014)
Published in Applied physics express (01.01.2014)
Get full text
Journal Article
FILM FORMING APPARATUS
SUZUKI KUNIHIKO, MATSUURA HIDEKI, SUZUKI KATSUMI, IKETANI NAOHISA, YAJIMA MASAYOSHI, FUJIBAYASHI HIROAKI, HARA KAZUKUNI
Year of Publication 24.05.2018
Get full text
Year of Publication 24.05.2018
Patent
FILM FORMING APPARATUS
SUZUKI KUNIHIKO, MATSUURA HIDEKI, SUZUKI KATSUMI, IKETANI NAOHISA, YAJIMA MASAYOSHI, FUJIBAYASHI HIROAKI, HARA KAZUKUNI
Year of Publication 24.05.2018
Get full text
Year of Publication 24.05.2018
Patent