Thermally stimulated current separation of hole and acceptor trap density in 4H-SiC epitaxial MOS devices using gamma irradiation
Tadjer, M.J., Hobart, K.D., Stahlbush, R.E., McMarr, P.J., Hughes, H.L., Imhoff, E.A., Kub, F.J., Haney, S.K.
Published in 2009 IEEE Nuclear Science Symposium Conference Record (NSS/MIC) (01.10.2009)
Published in 2009 IEEE Nuclear Science Symposium Conference Record (NSS/MIC) (01.10.2009)
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