Kinetic surface roughening in molecular beam epitaxy of InP
Cotta, MA, Hamm, RA, Staley, TW, Chu, SN, Harriott, LR, Panish, MB, Temkin, H
Published in Physical review letters (28.06.1993)
Published in Physical review letters (28.06.1993)
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Journal Article
20-Gb/s monolithic p-i-n/HBT photoreceiver module for 1.55-μm applications
Lunardi, L.M., Chandrasekhar, S., Gnauck, A.H., Burrus, C.A.
Published in IEEE photonics technology letters (01.10.1995)
Published in IEEE photonics technology letters (01.10.1995)
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Journal Article
Extraction of the InP/GaInAs heterojunction bipolar transistor small-signal equivalent circuit
Spiegel, S.J., Ritter, D., Hamm, R.A., Feygenson, A., Smith, P.R.
Published in IEEE transactions on electron devices (01.06.1995)
Published in IEEE transactions on electron devices (01.06.1995)
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Journal Article
Subpicosecond InP/InGaAs heterostructure bipolar transistors
Chen, Y.-K., Nottenburg, R.N., Panish, M.B., Hamm, R.A., Humphrey, D.A.
Published in IEEE electron device letters (01.06.1989)
Published in IEEE electron device letters (01.06.1989)
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Journal Article
Measurement and comparison of 1/f noise and g-r noise in silicon homojunction and III-V heterojunction bipolar transistors
Kirtania, A.K., Das, M.B., Chandrasekhar, S., Lunardi, L.M., Qua, G.J., Hamm, R.A., Li-Wu Yang
Published in IEEE transactions on electron devices (01.05.1996)
Published in IEEE transactions on electron devices (01.05.1996)
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Journal Article
Metallurgical stability of ohmic contacts on thin base InP/InGaAs/InP HBT's
Chor, E.F., Malik, R.J., Hamm, R.A., Ryan, R.
Published in IEEE electron device letters (01.02.1996)
Published in IEEE electron device letters (01.02.1996)
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Journal Article
Materials and electrical characteristics of carbon-doped Ga0.47In0.53As using carbontetrabromide by MOMBE for HBT device applications
HAMM, R. A, CHANDRASEKHAR, S, LUNARDI, L, GEVA, M, MALIK, R, HUMPHREY, D, RYAN, R
Published in Journal of crystal growth (01.07.1996)
Published in Journal of crystal growth (01.07.1996)
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Conference Proceeding
Journal Article
A 12-Gb/s high-performance, high-sensitivity monolithic p-i-n/HBT photoreceiver module for long-wavelength transmission systems
Lunardi, L.M., Chandrasekhar, S., Gnauck, A.H., Burrus, C.A., Hamm, R.A., Sulhoff, J.W., Zyskind, J.L.
Published in IEEE photonics technology letters (01.02.1995)
Published in IEEE photonics technology letters (01.02.1995)
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Journal Article
Minibands in the continuum of multi-quantum-well superlattices
Gershoni, D, Oiknine-Schlesinger, J, Ehrenfreund, E, Ritter, D, Hamm, RA, Panish, MB
Published in Physical review letters (01.11.1993)
Published in Physical review letters (01.11.1993)
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Journal Article
Evaluation of encapsulation and passivation of InGaAs/InP DHBT devices for long-term reliability
KOPF, R. F, HAMM, R. A, RYAN, R. W, BURM, J, TATE, A, CHEN, Y.-K, GEORGIOU, G, LANG, D. V, REN, F
Published in Journal of electronic materials (01.08.1998)
Published in Journal of electronic materials (01.08.1998)
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Journal Article
Dry-etch fabrication of reduced area InGaAs/InP DHBT devices for high speed circuit applications
KOPF, R. F, HAMM, R. A, WANG, Y.-C, RYAN, R. W, TATE, A, MELENDES, M. A, PULLELA, R, CHEN, Y.-K, THEVIN, J
Published in Journal of electronic materials (01.02.2000)
Published in Journal of electronic materials (01.02.2000)
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Journal Article
Characteristics of carbon doped InGaAs using carbontetrabromide by metalorganic molecular beam epitaxy
Hamm, R.A., Chandrasekhar, S., Lunardi, L., Geva, M.
Published in Journal of crystal growth (01.02.1995)
Published in Journal of crystal growth (01.02.1995)
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Journal Article
Effect of ECR plasma on the luminescence efficiency of InGaAs and InP
Ren, F., Buckley, D.N., Lee, K.M., Pearton, S.J., Bartynski, R.A., Constantine, C., Hobson, W.S., Hamm, R.A., Chao, P.C.
Published in Solid State Electronics (01.12.1995)
Published in Solid State Electronics (01.12.1995)
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Book Review
Journal Article
Passivation of carbon doping in InGaAs during ECR-CVD of SiNx
Ren, F, Hamm, R.A, Lothian, J.R, Wilson, R.G, Pearton, S.J
Published in Solid-state electronics (01.05.1996)
Published in Solid-state electronics (01.05.1996)
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Journal Article
Novel fabrication of C-doped base InGaAs/InP DHBT structures for high speed circuit applications
Kopf, R.F, Hamm, R.A, Malik, R.J, Ryan, R.W, Burm, J, Tate, A, Chen, Y.-K, Georgiou, G, Lang, D.V, Geva, M, Ren, F
Published in Solid-state electronics (01.12.1998)
Published in Solid-state electronics (01.12.1998)
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Journal Article
Optimization of the base electrode for InGaAs/InP DHBT structures with a buried emitter-base junction
KOPF, R. F, HAMM, R. A, RYAN, R. W, TATE, A, BURM, J
Published in Journal of electronic materials (01.11.1998)
Published in Journal of electronic materials (01.11.1998)
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Conference Proceeding
Journal Article