Search Results - "Hamada, Masaya" :: K.UTB vyhledávací portál

Importance of crystallinity improvement in MoS2 film by compound sputtering even followed by post sulfurization

by Imai, Shinya, Hamada, Takuya, Hamada, Masaya, Shirokura, Takanori, Muneta, Iriya, Kakushima, Kuniyuki, Tatsumi, Tetsuya, Tomiya, Shigetaka, Tsutsui, Kazuo, Wakabayashi, Hitoshi
Published in Japanese Journal of Applied Physics (01.05.2021)

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Evaluation of annual performance for building‐integrated photovoltaics based on 2‐terminal perovskite/silicon tandem cells under realistic conditions

by Nguyen, Dong C., Murata, Fumihiro, Sato, Kota, Hamada, Masaya, Ishikawa, Yasuaki
Published in Energy science & engineering (01.04.2022)

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Positive Seebeck coefficient of niobium-doped MoS2 film deposited by sputtering and activated by sulfur vapor annealing

by Horiguchi, Taiga, Hamada, Takuya, Hamada, Masaya, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Tatsumi, Tetsuya, Tomiya, Shigetaka, Wakabayashi, Hitoshi
Published in Japanese Journal of Applied Physics (01.07.2022)

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High Hall-Effect Mobility of Large-Area Atomic-Layered Polycrystalline ZrS2 Film Using UHV RF Magnetron Sputtering and Sulfurization

by Hamada, Masaya, Matsuura, Kentaro, Sakamoto, Takuro, Muneta, Iriya, Hoshii, Takuya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi
Published in IEEE journal of the Electron Devices Society (01.01.2019)

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Sheet Resistance Reduction of MoS₂ Film Using Sputtering and Chlorine Plasma Treatment Followed by Sulfur Vapor Annealing

by Hamada, Takuya, Tomiya, Shigetaka, Tatsumi, Tetsuya, Hamada, Masaya, Horiguchi, Taiga, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi
Published in IEEE journal of the Electron Devices Society (2021)

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WS2 Film by Sputtering and Sulfur-Vapor Annealing, and its pMISFET With TiN/HfO2 Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box

by Hamada, Takuya, Hamada, Masaya, Igarashi, Satoshi, Horiguchi, Taiga, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Tatsumi, Tetsuya, Tomiya, Shigetaka, Wakabayashi, Hitoshi
Published in IEEE journal of the Electron Devices Society (2021)

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Development of a liquid tin microjet target for an efficient laser-produced plasma extreme ultraviolet source

by Higashiguchi, Takeshi, Hamada, Masaya, Kubodera, Shoichi
Published in Review of scientific instruments (01.03.2007)

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ABNORMALITY DETECTION SYSTEM OF POWER SUPPLY DEVICE

by HAMADA MASAYA
Year of Publication 07.10.2022

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Quantification of open circuit voltage by the outdoor electroluminescence method

by Sato, Kota, Hamada, Masaya, Ishikawa, Yasuaki
Published in Proceedings of the Annual Meeting of the Japan Photovoltaic Society (12.10.2021)

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Outdoor electroluminescence method for high-light intensity environment

by Hamada, Masaya, Sato, Kota, Ishikawa, Yasuaki
Published in Proceedings of the Annual Meeting of the Japan Photovoltaic Society (12.10.2021)

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Annual output energy harvested by building-integrated photovoltaics based on the optimized structure of 2-terminal perovskite/silicon tandem cells under realistic conditions

by Nguyen, Dong C., Sato, Kota, Hamada, Masaya, Murata, Fumihiro, Ishikawa, Yasuaki
Published in Solar energy (15.07.2022)

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Chemical states of PVD-ZrS 2 film underneath scaled high-k film with self-oxidized ZrO 2 film as interfacial layer

by Otomo, Masaki, Hamada, Masaya, Ono, Ryo, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi
Published in Japanese Journal of Applied Physics (01.04.2023)

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High Seebeck coefficient in PVD-WS2 film with grain size enlargement

by Hamada, Takuya, Hamada, Masaya, Horiguchi, Taiga, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Tatsumi, Tetsuya, Tomiya, Shigetaka, Wakabayashi, Hitoshi
Published in Japanese Journal of Applied Physics (01.05.2022)

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ZrS 2 symmetrical-ambipolar FETs with near-midgap TiN film for both top-gate electrode and Schottky-barrier contact

by Hamada, Masaya, Matsuura, Kentaro, Hamada, Takuya, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi
Published in Japanese Journal of Applied Physics (01.05.2021)

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Positive Seebeck coefficient of niobium-doped MoS 2 film deposited by sputtering and activated by sulfur vapor annealing

by Horiguchi, Taiga, Hamada, Takuya, Hamada, Masaya, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Tatsumi, Tetsuya, Tomiya, Shigetaka, Wakabayashi, Hitoshi
Published in Japanese Journal of Applied Physics (01.07.2022)

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High Seebeck coefficient in PVD-WS 2 film with grain size enlargement

by Hamada, Takuya, Hamada, Masaya, Horiguchi, Taiga, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Tatsumi, Tetsuya, Tomiya, Shigetaka, Wakabayashi, Hitoshi
Published in Japanese Journal of Applied Physics (01.05.2022)

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Elucidation of PVD MoS2 film formation process and its structure focusing on sub-monolayer region

by Ono, Ryo, Imai, Shinya, Kusama, Yuta, Hamada, Takuya, Hamada, Masaya, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Kano, Emi, Ikarashi, Nobuyuki, Wakabayashi, Hitoshi
Published in Japanese Journal of Applied Physics (01.05.2022)

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Importance of crystallinity improvement in MoS 2 film by compound sputtering even followed by post sulfurization

by Imai, Shinya, Hamada, Takuya, Hamada, Masaya, Shirokura, Takanori, Muneta, Iriya, Kakushima, Kuniyuki, Tatsumi, Tetsuya, Tomiya, Shigetaka, Tsutsui, Kazuo, Wakabayashi, Hitoshi
Published in Japanese Journal of Applied Physics (01.05.2021)

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Self-aligned-TiSi 2 bottom contact with APM cleaning and post-annealing for sputtered-MoS 2 film

by Igarashi, Satoshi, Mochizuki, Yusuke, Tanigawa, Haruki, Hamada, Masaya, Matsuura, Kentaro, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi
Published in Japanese Journal of Applied Physics (01.05.2021)

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Elucidation of PVD MoS 2 film formation process and its structure focusing on sub-monolayer region

by Ono, Ryo, Imai, Shinya, Kusama, Yuta, Hamada, Takuya, Hamada, Masaya, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Kano, Emi, Ikarashi, Nobuyuki, Wakabayashi, Hitoshi
Published in Japanese Journal of Applied Physics (01.05.2022)

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