Detailed investigation of Ge–Si interdiffusion in the full range of Si1−xGex(≤x≤1) composition
Gavelle, Mathieu, Bazizi, El Mehdi, Scheid, Emmanuel, Fazzini, Pier Francesco, Cristiano, Fuccio, Armand, Claude, Lerch, Wilfried, Paul, Silke, Campidelli, Yves, Halimaoui, Aomar
Published in Journal of applied physics (01.12.2008)
Published in Journal of applied physics (01.12.2008)
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Journal Article
High-density oxidized porous silicon
Gharbi, Ahmed, Remaki, Boudjemaa, Halimaoui, Aomar, Bensahel, Daniel, Souifi, Abdelkader
Published in Semiconductor science and technology (01.10.2012)
Published in Semiconductor science and technology (01.10.2012)
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Journal Article
p-type silicon doping profiling using electrochemical anodization
Gharbi, Ahmed, Remaki, Boudjemaa, Halimaoui, Aomar, Bensahel, Daniel, Souifi, Abdelkader
Published in Journal of applied physics (15.01.2011)
Published in Journal of applied physics (15.01.2011)
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Journal Article
Detection of Cs2Ge+ clusters for the quantification of germanium atoms by secondary ion mass spectrometry: Application to the characterization of Si1−xGex layers (⩽x⩽1) and germanium diffusion in silicon
Gavelle, Mathieu, Scheid, Emmanuel, Cristiano, Fuccio, Armand, Claude, Hartmann, Jean-Michel, Campidelli, Yves, Halimaoui, Aomar, Fazzini, Pier-Francesco, Marcelot, Olivier
Published in Journal of applied physics (01.10.2007)
Published in Journal of applied physics (01.10.2007)
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Journal Article
Investigation of current-voltage characteristics of p-type silicon during electrochemical anodization and application to doping profiling
Gharbi, Ahmed, Remaki, Boudjemaa, Halimaoui, Aomar, Bensahel, Daniel, Souifi, Abdelkader
Published in Physica status solidi. C (01.03.2011)
Published in Physica status solidi. C (01.03.2011)
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Journal Article
A New Method to Induce Tensile Stress in Silicon on Insulator Substrate: From Material Analysis to Device Demonstration
Maitrejean, Sylvain, Loubet, Nicolas, Augendre, Emmanuel, Morin, Pierre Francois, Reboh, Shay, Bernier, Nicolas, Wacquez, Romain, Lherron, Benoit, Bonnevialle, Aurore, Liu, Qing, Hartmann, Jean-Michel, He, Hong, Halimaoui, Aomar, Li, Juntao, Pilorget, Sonia, Kanyandekwe, Joel, Grenouillet, Laurent, Chafik, Fadoua, Morand, Yves, Le Royer, Cyrille, Faynot, Oliver, Celik, Muhsin, Doris, Bruce, de Salvo, Barbara
Published in ECS transactions (31.03.2015)
Published in ECS transactions (31.03.2015)
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Journal Article
Detailed investigation of Ge-Si interdiffusion in the full range of Si 1 − x Ge x ( 0 ≤ x ≤ 1 ) composition
Gavelle, Mathieu, Bazizi, El Mehdi, Scheid, Emmanuel, Fazzini, Pier Francesco, Cristiano, Fuccio, Armand, Claude, Lerch, Wilfried, Paul, Silke, Campidelli, Yves, Halimaoui, Aomar
Published in Journal of applied physics (09.12.2008)
Published in Journal of applied physics (09.12.2008)
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Journal Article
Study of silicon–germanium interdiffusion from pure germanium deposited layers
Gavelle, Mathieu, Bazizi, El Mehdi, Scheid, Emmanuel, Armand, Claude, Fazzini, Pier Francesco, Marcelot, Olivier, Campidelli, Yves, Halimaoui, Aomar, Cristiano, Fuccio
Published in Materials science & engineering. B, Solid-state materials for advanced technology (05.12.2008)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (05.12.2008)
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Journal Article
Detection of Cs 2 Ge + clusters for the quantification of germanium atomsby secondary ion mass spectrometry: Application to the characterizationof Si 1 − x Ge x layers ( 0 ⩽ x ⩽ 1 ) and germanium diffusion in silicon
Gavelle, Mathieu, Scheid, Emmanuel, Cristiano, Fuccio, Armand, Claude, Hartmann, Jean-Michel, Campidelli, Yves, Halimaoui, Aomar, Fazzini, Pier-Francesco, Marcelot, Olivier
Published in Journal of applied physics (03.10.2007)
Published in Journal of applied physics (03.10.2007)
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Journal Article
Electrically conductive element
Dubarry, Christophe, Rodriguez, Guillaume, Halimaoui, Aomar, Tessaire, Magali
Year of Publication 05.09.2023
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Year of Publication 05.09.2023
Patent
Integration of PtSi in p-Type MOSFETs Using a Sacrificial Low-Temperature Germanidation Process
Breil, N., Dubois, E., Halimaoui, A., Pouydebasque, A., Laszcz, A., Ratajcak, J., Larrieu, G., Skotnicki, T.
Published in IEEE electron device letters (01.02.2008)
Published in IEEE electron device letters (01.02.2008)
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Journal Article
Issues Associated to Rare Earth Silicide Integration in Ultra Thin FD SOI Schottky Barrier nMOSFETs
Larrieu, Guilhem, Yarekha, Dmytro A., Dubois, Emmanuel, Deresmes, Dominique, Breil, Nicolas, Reckinger, Nicolas, Tang, Xiaohui, Halimaoui, Aomar
Published in ECS transactions (2009)
Published in ECS transactions (2009)
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Journal Article
Method for securing an integrated circuit upon making it
Bernasconi, Sophie, Pebay-Peyroula, Florian, Halimaoui, Aomar, Charpin-Nicolle, Christelle
Year of Publication 15.03.2022
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Year of Publication 15.03.2022
Patent
Detection of Cs{sub 2}Ge{sup +} clusters for the quantification of germanium atoms by secondary ion mass spectrometry: Application to the characterization of Si{sub 1-x}Ge{sub x} layers (0{<=}x{<=}1) and germanium diffusion in silicon
Gavelle, Mathieu, Scheid, Emmanuel, Cristiano, Fuccio, Armand, Claude, Hartmann, Jean-Michel, Campidelli, Yves, Halimaoui, Aomar, Fazzini, Pier-Francesco, Marcelot, Olivier, INSAT, Departement de Physique, 135 Avenue de Rangueil, 31077 Toulouse Cedex 4, CEA-LETI, MINATEC, 17 Rue des Martyrs, 38054 Grenoble Cedex 9, STMicroelectronics, 850 Rue Jean Monnet, 38926 Crolles Cedex, CEMES-CNRS, University of Toulouse, 29 Rue Jeanne Marvig BP 94347, 31055 Toulouse Cedex 4
Published in Journal of applied physics (01.10.2007)
Published in Journal of applied physics (01.10.2007)
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Journal Article