Characteristics of InGaP/GaAs double junction thin film solar cells on a flexible metallic substrate
Zhao, Bin, Tang, Xian-Sheng, Huo, Wen-Xue, Jiang, Yang, Ma, Zi-Guang, Wang, Lu, Wang, Wen-Xin, Chen, Hong, Jia, Hai-Qiang
Published in Solar energy (01.11.2018)
Published in Solar energy (01.11.2018)
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Stress Control in GaN Grown on 6H-SiC by Metalorganic Chemical Vapor Deposition
Chen, Yao (耀陈), Jiang, Yang (洋江), Xu, Pei-Qiang (培强 徐), Ma, Zi-Guang (紫光 马), Wang, Xiao-Li (晓丽 王), Wang, Lu (禄王), Jia, Hai-Qiang (海强 贾), Chen, Hong (弘陈)
Published in Chinese physics letters (01.04.2011)
Published in Chinese physics letters (01.04.2011)
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Fabrication of 4-Inch Nano Patterned Wafer with High Uniformity by Laser Interference Lithography
Yue, Gen, Lei, Yu, Die, Jun-Hui, Jia, Hai-Qiang, Chen, Hong
Published in Chinese physics letters (01.05.2018)
Published in Chinese physics letters (01.05.2018)
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Journal Article
A method to extend wavelength into middle-wavelength infrared based on InAsSb/(Al)GaSb interband transition quantum well infrared photodetector
Li, Xuan-Zhang, Sun, Ling, Lu, Jin-Lei, Liu, Jie, Yue, Chen, Xie, Li-Li, Wang, Wen-Xin, Chen, Hong, Jia, Hai-Qiang, Wang, Lu
Published in Chinese physics B (01.02.2020)
Published in Chinese physics B (01.02.2020)
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Journal Article
Room-temperature operating extended short wavelength infrared photodetector based on interband transition of InAsSb/GaSb quantum well
Sun, Ling, Wang, Lu, Lu, Jin-Lei, Liu, Jie, Fang, Jun, Xie, Li-Li, Hao, Zhi-Biao, Jia, Hai-Qiang, Wang, Wen-Xin, Chen, Hong
Published in Chinese physics B (01.04.2018)
Published in Chinese physics B (01.04.2018)
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Journal Article
Effect of Dopant Concentration in a Base Layer on Photocurrent–Voltage Characteristics of Photovoltaic Power Converters
Huo, Wen-Xue, Zhao, Ming-Long, Tang, Xian-Sheng, Han, Li-Li, Deng, Zhen, Jiang, Yang, Wang, Wen-Xin, Chen, Hong, Du, Chun-Hua, Jia, Hai-Qiang
Published in Chinese physics letters (01.08.2020)
Published in Chinese physics letters (01.08.2020)
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Journal Article
Enhanced absorption process in the thin active region of GaAs based p–i–n structure
Yue, Chen, Tang, Xian-Sheng, Li, Yang-Feng, Wang, Wen-Qi, Li, Xin-Xin, Zhang, Jun-Yang, Deng, Zhen, Du, Chun-Hua, Jia, Hai-Qiang, Wang, Wen-Xin, Lu, Wei, Jiang, Yang, Chen, Hong
Published in Chinese physics B (01.09.2021)
Published in Chinese physics B (01.09.2021)
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Journal Article
Surface Morphology Improvement of Non-Polar a-Plane GaN Using a Low-Temperature GaN Insertion Layer
Yan, Shen, Hu, Xiao-Tao, Die, Jun-Hui, Wang, Cai-Wei, Hu, Wei, Wang, Wen-Liang, Ma, Zi-Guang, Deng, Zhen, Du, Chun-Hua, Wang, Lu, Jia, Hai-Qiang, Wang, Wen-Xin, Jiang, Yang, Li, Guoqiang, Chen, Hong
Published in Chinese physics letters (01.03.2020)
Published in Chinese physics letters (01.03.2020)
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Journal Article
Reversible Carriers Tunnelling in Asymmetric Coupled InGaN/GaN Quantum Wells
Xiao-Jiang, Pei, Li-Wei, Guo, Yang, Wang, Xiao-Hui, Wang, Hai-Qiang, Jia, Hong, Chen, Jun-Ming, Zhou, Li, Wang, N, Tamai
Published in Chinese physics letters (01.09.2008)
Published in Chinese physics letters (01.09.2008)
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Journal Article
Origin of Selective Growth of GaN on Maskless V-Grooved Sapphire Substrates by Metalorganic Chemical Vapor Deposition
Wang, Jing, Guo, Li Wei, Jia, Hai Qiang, Xing, Zhi Gang, Wang, Yang, Chen, Hong, Zhou, Jun Ming
Published in Japanese Journal of Applied Physics (01.01.2005)
Published in Japanese Journal of Applied Physics (01.01.2005)
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Journal Article
Three-Step Growth Optimization of AlN Epilayers by MOCVD
Ming-Zeng, Peng, Li-Wei, Guo, Jie, Zhang, Nai-Sen, Yu, Xue-Liang, Zhu, Jian-Feng, Yan, Bin-Hui, Ge, Hai-Qiang, Jia, Hong, Chen, Jun-Ming, Zhou
Published in Chinese physics letters (01.06.2008)
Published in Chinese physics letters (01.06.2008)
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Journal Article
Growth of Highly Conductive n-Type Al0.7Ga0.3N Film by Using AlN Buffer with Periodical Variation of V/III Ratio
Jie, Zhang, Li-Wei, Guo, Zhi-Gang, Xing, Bing-Hui, Ge, Guo-Jian, Ding, Ming-Zeng, Peng, Hai-Qiang, Jia, Jun-Ming, Zhou, Hong, Chen
Published in Chinese physics letters (01.12.2008)
Published in Chinese physics letters (01.12.2008)
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Journal Article
Growth of Semi-Insulating GaN by Using Two-Step AlN Buffer Layer
Zhong-Tang, Zhou, Li-Wei, Guo, Zhi-Gang, Xing, Guo-Jian, Ding, Jie, Zhang, Ming-Zeng, Peng, Hai-Qiang, Jia, Hong, Chen, Jun-Ming, Zhou
Published in Chinese physics letters (01.06.2007)
Published in Chinese physics letters (01.06.2007)
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Journal Article
Characteristic improvements of thin film AlGaInP red light emitting diodes on a metallic substrate
Zhao, Bin, Hu, Wei, Tang, Xian-Sheng, Huo, Wen-Xue, Han, Li-Li, Zhao, Ming-Long, Ma, Zi-Guang, Wang, Wen-Xin, Jia, Hai-Qiang, Chen, Hong
Published in Chinese physics B (01.04.2018)
Published in Chinese physics B (01.04.2018)
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Journal Article
Characteristics of High In-Content InGaN Alloys Grown by MOCVD
Xue-Liang, Zhu, Li-Wei, Guo, Nai-Sen, Yu, Ming-Zeng, Peng, Jian-Feng, Yan, Bing-Hui, Ge, Hai-Qiang, Jia, Hong, Chen, Jun-Ming, Zhou
Published in Chinese physics letters (01.12.2006)
Published in Chinese physics letters (01.12.2006)
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