Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements
Lelis, A.J., Habersat, D., Green, R., Ogunniyi, A., Gurfinkel, M., Suehle, J., Goldsman, N.
Published in IEEE transactions on electron devices (01.08.2008)
Published in IEEE transactions on electron devices (01.08.2008)
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Journal Article
Dynamic On-State Resistance in SiC MOSFETs
Green, R., Lelis, A., Urciuoli, D., Schroen, E., Habersat, D.
Published in 2023 IEEE International Reliability Physics Symposium (IRPS) (01.03.2023)
Published in 2023 IEEE International Reliability Physics Symposium (IRPS) (01.03.2023)
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Conference Proceeding
Effect of Threshold-Voltage Instability on SiC DMOSFET Reliability
Lelis, A.J., Green, R., Habersat, D., Goldsman, N.
Published in 2008 IEEE International Integrated Reliability Workshop Final Report (01.10.2008)
Published in 2008 IEEE International Integrated Reliability Workshop Final Report (01.10.2008)
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Conference Proceeding
Advances in Pulsed-Laser-Deposited AlN Thin Films for High-Temperature Capping, Device Passivation, and Piezoelectric-Based RF MEMS/NEMS Resonator Applications
Hullavarad, S S, Vispute, R D, Nagaraj, B, Kulkarni, V N
Published in Journal of electronic materials (01.04.2006)
Published in Journal of electronic materials (01.04.2006)
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Journal Article
Advances in pulsed-laser-deposited AIN thin films for high-temperature capping, device passivation, and piezoelectric-based RF MEMS/NEMS resonator applications
Hullavarad, S. S., Vispute, R. D., Nagaraj, B., Kulkarni, V. N., Dhar, S., Venkatesan, T., Jones, K. A., Derenge, M., Zheleva, T., Ervin, M. H., Lelis, A., Scozzie, C. J., Habersat, D., Wickenden, A. E., Currano, L. J., Dubey, M.
Published in Journal of electronic materials (01.04.2006)
Published in Journal of electronic materials (01.04.2006)
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Journal Article
A Physical Model of High Temperature 4H-SiC MOSFETs
Potbhare, Siddharth, Goldsman, Neil, Lelis, Aivars, McGarrity, James M., McLean, F. Barry, Habersat, Daniel
Published in IEEE transactions on electron devices (01.08.2008)
Published in IEEE transactions on electron devices (01.08.2008)
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Journal Article
Application of reliability test standards to SiC Power MOSFETs
Green, R, Lelis, A, Habersat, D
Published in 2011 International Reliability Physics Symposium (01.04.2011)
Published in 2011 International Reliability Physics Symposium (01.04.2011)
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Conference Proceeding
Characterization of Transient Gate Oxide Trapping in SiC MOSFETs Using Fast [Formula Omitted]-[Formula Omitted] Techniques
Gurfinkel, M, Xiong, H D, Cheung, K P, Suehle, J S, Bernstein, J B, Shapira, Y, Lelis, A J, Habersat, D, Goldsman, N
Published in IEEE transactions on electron devices (01.08.2008)
Published in IEEE transactions on electron devices (01.08.2008)
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Journal Article
Effect of Threshold-Voltage Instability on SiC DMOSFET Reliability
Lelis, Aivars, Habersat, D., Green, R., Goldsman, N.
Published in 2008 IEEE International Integrated Reliability Workshop Final Report (01.10.2008)
Published in 2008 IEEE International Integrated Reliability Workshop Final Report (01.10.2008)
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Conference Proceeding
Ultra-Fast Characterization of Transient Gate Oxide Trapping in SiC Mosfets
Gurfinkel, M., Suehle, J., Bernstein, J.B., Shapira, Y., Lelis, A.J., Habersat, D., Goldsman, N.
Published in 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual (01.04.2007)
Published in 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual (01.04.2007)
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Conference Proceeding
Advances in pulsed-laser-deposited AlN thin films for high-temperature capping, device passivation, and piezoelectric-based RF MEMS/NEMS resonator applications: Group III Nitrides, SiC, and ZnO
HULLAVARAD, S. S, VISPUTE, R. D, LELIS, A, SCOZZIE, C. J, HABERSAT, D, WICKENDEN, A. E, CURRANO, L. J, DUBEY, M, NAGARAJ, B, KULKARNI, V. N, DHAR, S, VENKATESAN, T, JONES, K. A, DERENGE, M, ZHELEVA, T, ERVIN, M. H
Published in Journal of electronic materials (2006)
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Published in Journal of electronic materials (2006)
Journal Article
Modeling and Characterization of Bias Stress-Induced Instability of SiC MOSFETs
Lelis, A.J., Potbhare, S., Habersat, D., Pennington, G., Goldsman, N.
Published in 2006 IEEE International Integrated Reliability Workshop Final Report (01.10.2006)
Published in 2006 IEEE International Integrated Reliability Workshop Final Report (01.10.2006)
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Conference Proceeding
AlN thin films deposited by pulsed laser ablation, sputtering and filtered arc techniques
Bathe, Ravi, Vispute, R.D, Habersat, Dan, Sharma, R.P, Venkatesan, T, Scozzie, C.J, Ervin, Matt, Geil, B.R, Lelis, A.J, Dikshit, S.J, Bhattacharya, R
Published in Thin solid films (01.11.2001)
Published in Thin solid films (01.11.2001)
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Journal Article
Ultra-Fast Measurements of VTH Instability in SiC MOSFETs due to Positive and Negative Constant Bias Stress
Gurfinkel, M., Suehle, J., Bernstein, J.B., Shapira, Y., Lelis, A.J., Habersat, D., Goldsman, N.
Published in 2006 IEEE International Integrated Reliability Workshop Final Report (01.10.2006)
Published in 2006 IEEE International Integrated Reliability Workshop Final Report (01.10.2006)
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Conference Proceeding
Key Reliability Issues for SiC Power MOSFETs
Lelis, A., Habersat, D., Green, R., El, M.
Published in Meeting abstracts (Electrochemical Society) (27.10.2013)
Published in Meeting abstracts (Electrochemical Society) (27.10.2013)
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Journal Article