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Published in Nano-micro letters (01.12.2021)
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Published in Advanced science (01.08.2024)
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Published in Physical chemistry chemical physics : PCCP (28.06.2016)
Published in Physical chemistry chemical physics : PCCP (28.06.2016)
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Microscopic Origin of Polarity-Dependent V TH Shift in Amorphous Chalcogenides for 3D Self-Selecting Memory
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Published in Nature physics (01.06.2015)
Published in Nature physics (01.06.2015)
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Tuning Dirac points by strain in MoX2 nanoribbons (X = S, Se, Te) with a 1T′ structureElectronic supplementary information (ESI) available: Additional information about the effects of edge modifications and ribbon widths on the edge states in MoS2-ZNRs, the formation of the edge states in MoX2-ANRs, the PBE and HSE band structures of MoTe2-ZNRs, and the variation of the Dirac point with strain. See DOI: 10.1039/c6cp02204a
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Sung, Ha-Jun, Choe, Duk-Hyun, Chang, K J
Published in Physical chemistry chemical physics : PCCP (01.06.2016)
Published in Physical chemistry chemical physics : PCCP (01.06.2016)
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A new superconducting open-framework allotrope of silicon at ambient pressure
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Cation-eutaxy-enabled III–V-derived van der Waals crystals as memristive semiconductors
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Published in Nature materials (01.10.2024)
Published in Nature materials (01.10.2024)
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Microscopic Origin of Polarity-Dependent VTH Shift in Amorphous Chalcogenides for 3D Self-Selecting Memory
Sung, Ha-Jun, Choi, Minwoo, Wu, Zhe, Chae, Hwasung, Heo, Sung, Kang, Youngjae, Koo, Bonwon, Park, Jong-Bong, Yang, Wooyoung, Park, Yongyoung, Ham, Yongnam, Yang, Kiyeon, Lee, Chang Seung
Published in Advanced science (09.10.2024)
Published in Advanced science (09.10.2024)
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A-IGZO FETs with High Current and Remarkable Stability for Vertical Channel Transistor(VCT) / 3D DRAM Applications
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Published in 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (16.06.2024)
Published in 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (16.06.2024)
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