Thin Film InP Epitaxy on Si (001) Using Selective Aspect Ratio Trapping
Li, Jizhong, Bai, Jie, Hydrick, Jennifer M., Fiorenza, James G., Major, Cheryl, Carroll, Mark, Shellenbarger, Zane, Lochtefeld, Anthony
Published in ECS transactions (06.03.2009)
Published in ECS transactions (06.03.2009)
Get full text
Journal Article
Monolithic integration of AlGaAs distributed Bragg reflectors on virtual Ge substrates via aspect ratio trapping
Lin, Yiheng, Shi, Wei, Li, Jizhong, Chang, Ting-Chang, Park, Ji-Soo, Hydrick, Jennifer, Duan, Zigang, Greenberg, Mark, Fiorenza, James G., Chrostowski, Lukas, Xia, Guangrui (Maggie)
Published in Optical materials express (01.03.2017)
Published in Optical materials express (01.03.2017)
Get full text
Journal Article
FORMATION OF DEVICES BY EPITAXIAL LAYER OVERGROWTH
PARK, JI SOO, BAI JIE, LI JIZHONG, CHENG ZHIYUAN, LOCHTEFELD ANTHONY, HYDRICK JENNIFER, FIORENZA JAMES
Year of Publication 26.05.2011
Get full text
Year of Publication 26.05.2011
Patent
Monolithic Integration of AlGaAs Distributed Bragg Reflectors on Virtual Ge Substrates via Aspect Ratio Trapping
Lin, Yiheng, Shi, Wei, Li, Jizhong, Chang, Ting-Chang, Park, Ji-Soo, Hydrick, Jennifer, Duan, Zigang, Greenberg, Mark, Fiorenza, James G, Chrostowski, Lukas, Xia, Guangrui
Year of Publication 15.01.2016
Year of Publication 15.01.2016
Get full text
Journal Article
Formation of devices by epitaxial layer overgrowth
Li Jizhong, Lochtefeld Anthony J, Hydrick Jennifer M, Park Ji-Soo, Bai Jie, Cheng Zhinyuan, Fiorenza James
Year of Publication 03.04.2018
Get full text
Year of Publication 03.04.2018
Patent
Formation of devices by epitaxial layer overgrowth
HYDRICK, JENNIFER, LOCHTEFELD, ANTHONY, LI, JIZHONG, FIORENZA, JAMES, PARK, JI-SOO, ZHIYUAN, CHENG, BAI, JIE
Year of Publication 29.06.2016
Get full text
Year of Publication 29.06.2016
Patent
Monolithic Integration of AlGaAs Distributed Bragg Reflectors on Virtual Ge Substrates via Aspect Ratio Trapping
Lin, Yiheng, Shi, Wei, Li, Jizhong, Ting-Chang, Chang, Ji-Soo, Park, Hydrick, Jennifer, Duan, Zigang, Greenberg, Mark, Fiorenza, James G, Chrostowski, Lukas, Xia, Guangrui
Published in arXiv.org (28.01.2017)
Get full text
Published in arXiv.org (28.01.2017)
Paper
Aspect Ratio Trapping: A Unique Technology for Integrating Ge and III-Vs with Silicon CMOS
Fiorenza, James G., Park, Ji-Soo, Hydrick, Jennifer, Li, Jason, Li, Jizhong, Curtin, Mike, Carroll, Mark, Lochtefeld, Anthony
Published in Meeting abstracts (Electrochemical Society) (08.07.2010)
Published in Meeting abstracts (Electrochemical Society) (08.07.2010)
Get full text
Journal Article
Formation of devices by epitaxial layer overgrowth
HYDRICK, JENNIFER, LOCHTEFELD, ANTHONY, LI, JIZHONG, FIORENZA, JAMES, PARK, JI-SOO, ZHIYUAN, CHENG, BAI, JIE
Year of Publication 20.03.2013
Get full text
Year of Publication 20.03.2013
Patent
Formation of devices by epitaxial layer overgrowth
Fiorenza, James, Lochtefeld, Anthony, Bai, Jie, Park, Ji-Soo, Hydrick, Jennifer, Li, Jizhong, Cheng, Zhiyuan
Year of Publication 11.10.2011
Get full text
Year of Publication 11.10.2011
Patent