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Published in IEEE transactions on electron devices (01.09.2010)
Published in IEEE transactions on electron devices (01.09.2010)
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Physical Mechanism of High-Programming-Efficiency Dynamic-Threshold Source-Side Injection in Wrapped-Select-Gate SONOS for nor-Type Flash Memory
WANG, Kuan-Ti, CHAO, Tien-Sheng, HSIEH, Tsung-Min, LIOU, Jhyy-Cheng, WANG, Shen-De, CHEN, Tzu-Ping, CHEN, Chien-Hung, LIN, Chih-Hung, CHEN, Hwi-Huang, CHIANG, Tsung-Yu, WU, Woei-Cherng, KUO, Po-Yi, WU, Yi-Hong, LU, Yu-Lun, LIAO, Chia-Chun, YANG, Wen-Luh, LEE, Chien-Hsing
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Published in IEEE electron device letters (01.11.2009)
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Published in IEEE transactions on electron devices (01.04.2003)
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High-Reliability Dynamic-Threshold Source-Side Injection for 2-Bit/Cell With MLC Operation of Wrapped S elect-Gate SONOS in NOR-Type Flash Memory
WANG, Kuan-Ti, CHAO, Tien-Sheng, LIN, Chih-Hung, CHEN, Hwi-Huang, WU, Woei-Cherng, YANG, Wen-Luh, LEE, Chien-Hsing, HSIEH, Tsung-Min, LIOU, Jhyy-Cheng, WANG, Shen-De, CHEN, Tzu-Ping, CHEN, Chien-Hung
Published in IEEE transactions on electron devices (2010)
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Published in IEEE transactions on electron devices (2010)
Journal Article
A Highly Reliable Multi-level and 2-bit/cell Operation of Wrapped-Select-Gate (WSG) SONOS Memory with Optimized ONO Thickness
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