Small signal analysis of electrically-stressed oxides with Poisson-Schroedinger based multiphonon capture model
Garetto, D, Randriamihaja, Y M, Rideau, D, Dornel, E, William, F C, Schmid, A, Huard, V, Jaouen, H, Leblebici, Y
Published in 2010 14th International Workshop on Computational Electronics (01.10.2010)
Published in 2010 14th International Workshop on Computational Electronics (01.10.2010)
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Conference Proceeding
FET e.g. N-channel MOSFET device, for one time programmable memory cell of electronic device, has source electrode highly doped than drain electrode, where doping impurity concentration gradient from channel towards drain electrode is high
GAMET STEPHANE, JIMENEZ JEAN, GALY PHILIPPE, HUARD VINCENT, DAMIENS JOEL
Year of Publication 06.07.2012
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Year of Publication 06.07.2012
Patent
The Energy-Driven Hot-Carrier Degradation Modes of nMOSFETs
Guerin, C., Huard, V., Bravaix, A.
Published in IEEE transactions on device and materials reliability (01.06.2007)
Published in IEEE transactions on device and materials reliability (01.06.2007)
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Magazine Article
Interface trap generation and hole trapping under NBTI and PBTI in advanced CMOS technology with a 2-nm gate oxide
Denais, M., Huard, V., Parthasarathy, C., Ribes, G., Perrier, F., Revil, N., Bravaix, A.
Published in IEEE transactions on device and materials reliability (01.12.2004)
Published in IEEE transactions on device and materials reliability (01.12.2004)
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Magazine Article
New Insights Into Recovery Characteristics During PMOS NBTI and CHC Degradation
Parthasarathy, C.R., Denais, M., Huard, V., Ribes, G., Vincent, E., Bravaix, A.
Published in IEEE transactions on device and materials reliability (01.03.2007)
Published in IEEE transactions on device and materials reliability (01.03.2007)
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Magazine Article